FDC365P tm P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ Features General Description Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A RoHS Compliant Applications Inverter Power Supplies S D D 1 6 D D 2 5 D G 3 4 S D G D Pin 1 D SuperSOTTM -6 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Ratings -35 Units V ±20 V -4.3 -20 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.8 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 156 °C/W Package Marking and Ordering Information Device Marking .365P Device FDC365P ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C Package SSOT6 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET November 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -35 V ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -28V, VGS = 0V -1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA -3 V -26 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 5.0 VGS = -10V, ID = -4.2A 45 55 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -3.2A 70 80 VGS = -10V, ID = -4.2A, TJ = 125°C 69 90 VDS = -10V, ID = -4.2A 8.7 gFS Forward Transconductance -1 -1.8 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 530 705 pF 105 135 pF 55 80 pF Ω 6.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -20V, ID = -4.2A, VGS = -10V, RGEN = 6Ω VDD = -20V, ID = -4.2A 7 13 ns 3 10 ns 15 28 ns 3 10 ns 11 15 nC 6 9 nC 1.7 nC 2.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -1.3A (Note 2) IF = -4.2A, di/dt = 100A/µs -0.8 -1.2 V 16 29 ns 7 14 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a. 78°C/W when mounted on a 1 in2 pad of 2 oz copper on FR-4 board. b. 156°C/W when mounted on minimum pad of 2 oz copper. a 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 2 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 VGS = -10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 16 VGS = -4.5V VGS = -4V 12 8 VGS = -3.5V 4 VGS = -3V 0 0 1 2 3 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = -3V 3.0 VGS = -3.5V 2.5 VGS = -4V 2.0 VGS = -4.5V 1.5 1.0 VGS = -10V 0.5 5 0 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 20 200 ID = - 4.2A VGS = -10V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 160 120 TJ = 125oC 80 TJ = 25oC 40 2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) -IS, REVERSE DRAIN CURRENT (A) 16 VDS = -5V 12 8 TJ = 150oC 4 TJ = 25oC TJ = -55oC 2 3 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 4 -VGS, GATE TO SOURCE VOLTAGE (V) 20 1 ID = -4.2A 0 -50 Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 8 12 -ID, DRAIN CURRENT(A) 20 10 VGS = 0V TJ = 150oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 3 1.2 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 ID = -4.2A 8 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -20V 6 VDD = -25V VDD = -15V 4 Ciss Coss 100 2 f = 1MHz VGS = 0V 30 0.1 0 0 3 6 9 12 1 35 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 P(PK), PEAK TRANSIENT POWER (W) 400 10 -ID, DRAIN CURRENT (A) Crss 0.1ms 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 100ms SINGLE PULSE TJ = MAX RATED RθJA = 156oC/W TA = 25oC 0.1 0.01 0.1 1s 10s DC 1 10 100 SINGLE PULSE VGS = -10V o RθJA = 156 C/W 100 o TA = 25 C 10 1 0.5 -4 10 -3 10 -VDS, DRAIN to SOURCE VOLTAGE (V) -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 156 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 4 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDC365P P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 5 www.fairchildsemi.com Preliminary Datasheet The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition tm Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 ©2007 Fairchild Semiconductor Corporation FDC365P Rev.C 6 www.fairchildsemi.com FDC365P P-Channel PowerTrench® MOSFET TRADEMARKS