Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification Complementary to 2SD2177 14.5±0.5 0.65 max. +0.1 Symbol Rating Unit Collector to base voltage VCBO −50 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −5 V Peak collector current ICP −3 A Collector current IC −2 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2.5±0.5 2 3 2.5±0.1 Parameter 2.5±0.5 1 +0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.45−0.05 0.45−0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit − 0.1 µA Collector cutoff current ICBO VCB = −20 V, IE = 0 Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −50 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −5 V VCE = −2 V, IC = −200 mA 120 hFE2 VCE = −2 V, IC = −1 A 60 Collector to emitter saturation voltage *1 VCE(sat) IC = −1 A, IB = −50 mA − 0.2 − 0.3 V Base to emitter saturation voltage *1 VBE(sat) IC = −1 A, IB = −50 mA − 0.85 −1.2 V Forward current transfer ratio *1 Transition frequency hFE1 *2 fT Collector output capacitance Cob 340 VCB = −10 V, IE = 50 mA, f = 200 MHz 110 VCB = −10 V, IE = 0, f = 1 MHz 40 MHz 60 pF Note) *1: Pulse measurement *2: Rank classification Rank R S No-rank hFE1 120 to 240 170 to 340 120 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1434 Transistors Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. 1.0 0.8 0.6 −1.6 −1.2 0 0 20 40 60 80 100 120 140 160 VBE(sat) IC IB = −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA 0 –2 –4 –6 –8 500 IC / IB = 20 –10 Ta = 100°C 25°C − 0.1 −25°C − 0.03 − 0.01 − 0.003 − 0.001 − 0.01 − 0.03 − 0.1 − 0.3 −10 −3 25°C −1 Ta = −25°C 75°C − 0.03 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 −10 Collector current IC (A) 200 VCE = −2 V IE = 0 f = 1 MHz Ta = 25°C 200 160 120 80 40 0 −1 −3 −10 −30 Ta = 100°C 25°C −25°C 100 −1 −3 Collector current IC (A) Cob VCB 240 300 0 − 0.01 − 0.03 − 0.1 − 0.3 −100 Collector to base voltage VCB (V) −3 −10 fT IE 400 200 −1 Collector current IC (A) Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) −1 VCB = −10 V Ta = 25°C −30 − 0.1 Collector output capacitance Cob (pF) −3 hFE IC − 0.3 2 IC / IB = 20 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −10 − 0.3 − 0.4 0.2 0 Ta = 25°C − 0.8 0.4 VCE(sat) IC −2.0 Collector current IC (A) Collector power dissipation PC (W) IC VCE −2.4 Collector to emitter saturation voltage VCE(sat) (V) PC Ta 1.2 −10 160 120 80 40 0 1 3 10 30 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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