ETC 2SB1434R

Transistors
2SB1434
Silicon PNP epitaxial planer type
Unit: mm
1.05 2.5±0.1
±0.05
0.15
6.9±0.1
4.0
0.8
0.2
0.7
1.0 1.0
■ Features
• Low collector to emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
(1.45)
0.5
4.5±0.1
For low-frequency output amplification
Complementary to 2SD2177
14.5±0.5
0.65 max.
+0.1
Symbol
Rating
Unit
Collector to base voltage
VCBO
−50
V
Collector to emitter voltage
VCEO
−50
V
Emitter to base voltage
VEBO
−5
V
Peak collector current
ICP
−3
A
Collector current
IC
−2
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
2.5±0.5
2
3
2.5±0.1
Parameter
2.5±0.5
1
+0.1
■ Absolute Maximum Ratings Ta = 25°C
0.45−0.05
0.45−0.05
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45+− 0.1
0.05
(HW Type)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
− 0.1
µA
Collector cutoff current
ICBO
VCB = −20 V, IE = 0
Collector to base voltage
VCBO
IC = −10 µA, IE = 0
−50
V
Collector to emitter voltage
VCEO
IC = −1 mA, IB = 0
−50
V
Emitter to base voltage
VEBO
IE = −10 µA, IC = 0
−5
V
VCE = −2 V, IC = −200 mA
120
hFE2
VCE = −2 V, IC = −1 A
60
Collector to emitter saturation voltage *1
VCE(sat)
IC = −1 A, IB = −50 mA
− 0.2
− 0.3
V
Base to emitter saturation voltage *1
VBE(sat)
IC = −1 A, IB = −50 mA
− 0.85
−1.2
V
Forward current transfer ratio
*1
Transition frequency
hFE1
*2
fT
Collector output capacitance
Cob
340
VCB = −10 V, IE = 50 mA, f = 200 MHz
110
VCB = −10 V, IE = 0, f = 1 MHz
40
MHz
60
pF
Note) *1: Pulse measurement
*2: Rank classification
Rank
R
S
No-rank
hFE1
120 to 240
170 to 340
120 to 340
Product of no-rank is not classified and have no indication for rank.
1
2SB1434
Transistors
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness.
1.0
0.8
0.6
−1.6
−1.2
0
0
20
40
60
80 100 120 140 160
VBE(sat)  IC
IB = −8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
0
–2
–4
–6
–8
500
IC / IB = 20
–10
Ta = 100°C
25°C
− 0.1
−25°C
− 0.03
− 0.01
− 0.003
− 0.001
− 0.01 − 0.03 − 0.1 − 0.3
−10
−3
25°C
−1
Ta = −25°C
75°C
− 0.03
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3
−1
−3
−10
Collector current IC (A)
200
VCE = −2 V
IE = 0
f = 1 MHz
Ta = 25°C
200
160
120
80
40
0
−1
−3
−10
−30
Ta = 100°C
25°C
−25°C
100
−1
−3
Collector current IC (A)
Cob  VCB
240
300
0
− 0.01 − 0.03 − 0.1 − 0.3
−100
Collector to base voltage VCB (V)
−3
−10
fT  IE
400
200
−1
Collector current IC (A)
Transition frequency fT (MHz)
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
−1
VCB = −10 V
Ta = 25°C
−30
− 0.1
Collector output capacitance Cob (pF)
−3
hFE  IC
− 0.3
2
IC / IB = 20
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
−100
−10
− 0.3
− 0.4
0.2
0
Ta = 25°C
− 0.8
0.4
VCE(sat)  IC
−2.0
Collector current IC (A)
Collector power dissipation PC (W)
IC  VCE
−2.4
Collector to emitter saturation voltage VCE(sat) (V)
PC  Ta
1.2
−10
160
120
80
40
0
1
3
10
30
Emitter current IE (mA)
100
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2001 MAR