Power Transistors 2SD0946, 2SD0946A, 2SD0946B (2SD946, 2SD946A, 2SD946B) Unit: mm Silicon NPN epitaxial planar type darlington 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer • A shunt resistor is omitted from the driver ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Symbol Rating Unit VCBO 30 V 2SD0946 2SD0946A 60 2SD0946B 100 0.75±0.1 2SD0946 25 VCEO 2SD0946A 50 2SD0946B 80 0.5±0.1 0.5±0.1 4.6±0.2 1 Collector to emitter voltage 3.05±0.1 3.8±0.3 ■ Features 16.0±1.0 For low-frequency amplification 11.0±0.5 φ 3.16±0.1 2 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B Package 3 V Internal Connection Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current (TC = 25°C) IC 1 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C C B E ■ Electrical Characteristics TC = 25°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 25 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4 V, IC = 0 100 nA VCBO IC = 100 µA, IE = 0 2SD0946 Collector to base voltage 2SD0946A 2SD0946 100 VCEO IC = 1 mA, IB = 0 25 2SD0946A 50 2SD0946B 80 Emitter to base voltage VEBO Forward current transfer ratio * V 60 2SD0946B Collector to emitter voltage 30 IE = 100 µA, IC = 0 V 5 V hFE VCE = 10 V, IC = 1 A Collector to emitter saturation voltage VCE(sat) IC = 1 A, IB = 1 mA 1.8 V Base to emitter saturation voltage VBE(sat) IC = 1 A, IB = 1 mA 2.2 V Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 4 000 40 000 150 MHz Note) *: Rank classification Rank hFE Q R S 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SD0946, 2SD0946A, 2SD0946B Power Transistors VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (W) Without heat sink 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 IC/IB=1000 10 3 1 TC=–25˚C 100˚C 0.3 25˚C 0.1 0.03 0.01 0.01 Ambient temperature Ta (˚C) 0.03 0.1 0.3 Collector output capacitance Cob (pF) VCE=10V Forward current transfer ratio hFE 100000 30000 25˚C TC=100˚C 3000 –25˚C 1000 300 IE=0 f=1MHz TC=25˚C 20 0.1 0.3 1 3 16 12 8 4 1 3 10 30 IC/IB=1000 10 3 TC=–25˚C 1 100˚C 25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 Collector current IC (A) 0 0.03 Collector current IC (A) 2 3 Cob VCB 24 100 0.01 1 Collector current IC (A) hFE IC 10000 VBE(sat) IC Base to emitter saturation voltage VBE(sat) (V) PC T a 1.6 100 Collector to base voltage VCB (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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