Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit: mm 0.40+0.10 ñ0.05 For low-frequency amplification 0.16+0.10 -0.06 Parameter 2SD1478 base voltage 2SD1478A Collector to 2SD1478 Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current Unit V 60 25 VCEO emitter voltage 2SD1478A V 50 5 V ICP 750 mA Collector current IC 500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1:Base 2:Emitter 3:Collector 0.4±0.2 EIAJ:SC–59 Mini3-G1 Package Marking symbol : 2N(2SD1478) 2O(2SD1478A) Internal Connection C B E (Ta=25˚C) Symbol Parameter (0.65) 10° (Ta=25˚C) Symbol Collector to 1.9±0.1 2.90+0.20 -0.05 1.1+0.3 -0.1 ■ Absolute Maximum Ratings 2 1 (0.95) (0.95) 1.1+0.2 -0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. 0 to 0.1 ● 5° ■ Features 2.8+0.2 -0.3 1.50+0.25 -0.05 3 Conditions min typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA VCBO IC = 100µA, IE = 0 Collector to base 2SD1478 voltage 2SD1478A Collector to emitter 2SD1478 voltage 2SD1478A VCEO 30 V 60 IC = 1mA, IB = 0 25 IC = 1mA, IB = 0 50 V Emitter to base voltage VEBO IE = 100µA, IC = 0 Forward current transfer ratio hFE*1 VCE = 10V, IC = 500mA*2 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 0.5mA*2 2.5 V Base to emitter voltage VBE(sat) IC = 500mA, IB = 0.5mA*2 3.0 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz *1h FE1 hFE1 Marking Symbol 622 V 20000 200 MHz *2 Rank classification Rank 5 4000 Q R 4000 ~ 10000 8000 ~ 20000 2SD1478 2NQ 2NR 2SD1478A 2OQ 2OR Pulse measurement Transistor 2SD1478, 2SD1478A IC — VCE Collector current IC (mA) 160 120 80 IB=50µA 45µA 100 40µA 30 35µA 10 30µA 25µA 20µA 15µA 10µA 3 1 40 5µA 0.3 0 40 80 120 160 0.1 0.1 200 Ambient temperature Ta (˚C) 0.3 Forward current transfer ratio hFE 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 30 100 IC/IB=1000 30 10 3 25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 3 Collector current IC (A) 10 25˚C 6 Ta=75˚C –25˚C 103 102 10 0.01 0.03 0.3 1 3 10 Collector current IC (A) Cob — VCB VCE=10V 104 Ta=75˚C 1 hFE — IC IC/IB=1000 1 10 105 30 3 3 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 Collector output capacitance Cob (pF) Collector power dissipation PC (mW) Ta=25˚C 300 200 0 Base to emitter saturation voltage VBE(sat) (V) VCE(sat) — IC 1000 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 240 IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V) 623 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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