Transistor 2SB0726 (2SB726) Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0±0.2 High foward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.7±0.2 ● ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V 0.45+0.15 Ð0.1 Collector to emitter voltage VCEO –80 V 2.5+0.6 Ð0.2 Emitter to base voltage VEBO –5 V Collector current IC –100 mA Collector power dissipation PC 250 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–43A TO-92-A1 Package (Ta=25˚C) Parameter Symbol Collector cutoff current 0.45+0.15 Ð0.1 2.5+0.6 Ð0.2 2.3±0.2 ● 5.1±0.2 ■ Features 4.0±0.2 Conditions ICBO VCB = –10V, IE = 0 min typ max Unit –100 nA –1 µA ICEO VCE = –10V, IB = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –80 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 Forward current transfer ratio hFE* VCB = –5V, IE = –2mA 180 Collector to emitter saturation voltage VCE(sat) IC = –20mA, IB = –2mA Base to emitter voltage VBE VCE = –1V, IC = –100mA –1 Transition frequency fT VCB = –5V, IE = 2mA, f = 200MHz 150 *h FE V 700 – 0.6 –1.2 V V MHz Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 Note.) The Part number in the Parenthesis shows conventional part number. 184 Transistor 2SB0726 PC — Ta IC — VCE –60 VCE=–5V Ta=25˚C 450 –70 25˚C 350 300 250 200 150 100 IB=–200µA –180µA –180µA –140µA –60 –50 –120µA –40 –100µA –80µA –30 –60µA –20 –40µA Collector current IC (mA) –50 400 Ta=75˚C –25˚C –40 –30 –20 –10 –10 50 0 –20µA 0 40 80 120 160 200 0 0 Ambient temperature Ta (˚C) –2 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.03 –3 –10 –12 0 – 0.4 –30 –100 Collector current IC (mA) – 0.8 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V) fT — I E 240 VCE=–5V Forward current transfer ratio hFE –30 –1 –10 600 IC/IB=10 – 0.01 – 0.1 – 0.3 –8 hFE — IC –100 – 0.1 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.3 –4 500 Ta=75˚C 400 25˚C –25˚C 300 200 100 0 – 0.1 – 0.3 VCB=–5V Ta=25˚C Transition frequency fT (MHz) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE –80 Collector current IC (mA) Collector power dissipation PC (mW) 500 200 160 120 80 40 0 –1 –3 –10 –30 Collector current IC (mA) –100 1 3 10 30 100 Emitter current IE (mA) Cob — VCB Collector output capacitance Cob (pF) 10 IE=0 f=1MHz Ta=25˚C 9 8 7 6 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) 185 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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