Power Transistors 2SD2527 Silicon NPN triple diffusion planar type Unit: mm For power amplification with high forward current transfer ratio 3.0±0.5 2.9±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 8 A Collector current IC 4 A Base current IB 1 A 40 W TC = 25°C PC Ta = 25°C φ 3.2±0.1 15.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 Solder Dip ■ Features Collector power dissipation 4.6±0.2 9.9±0.3 1.4±0.2 1.6±0.2 2.6±0.1 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions ICBO VCB = 80 V, IE = 0 Min Typ Max Unit 100 µA ICEO VCE = 40 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 6 V, IC = 0 100 µA Collector to emitter voltage VCEO Forward current transfer ratio * Collector to emitter saturation voltage IC = 25 mA, IB = 0 60 hFE VCE = 4 V, IC = 0.8 A 500 VCE(sat) IC = 3 A, IB = 0.075 A V 2 000 0.7 V Transition frequency fT VCE = 12 V, IC = 0.3 A, f = 10 MHz 30 MHz Storage time tstg IC = 3 A, IB1 = 0.06 A, IB2 = − 0.06 A, VCC = 50 V 20 µs Note) *: Rank classification Rank hFE Q P 500 to 1 200 800 to 2 000 1 2SD2527 Power Transistors IC VCE IC VBE VCE(sat) IC 5 Collector to emitter saturation voltage VCE(sat) (V) 1.6 TC=25˚C Collector current IC (A) 1.2 IB=1.0mA 1.0 0.9mA 0.8mA 0.8 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 4 3 2 1 0.2mA 0.2 0.1mA 0 0 0 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) 0.2 0.4 Transition frequency fT (MHz) Forward current transfer ratio hFE 1.2 1 10–1 10–2 10–3 10–2 103 102 10–1 1 10 Collector current IC (A) fT I C ton, tstg, tf IC 100 VCE=12V f=10MHz TC=25˚C 100 30 10 Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=–IB2) VCC=50V TC=25˚C 30 10 tstg 3 tf 1 ton 0.3 0.1 0.03 10–1 1 10 Collector current IC (A) Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 Collector current IC (A) 1.0 300 VCE=4V 10 10–2 ICP 10 t=1ms IC 10ms 3 1s 1 0.3 0.1 3 10 30 100 300 Collector to emitter voltage VCE (V) 2 0.8 IC/IB=40 Base to emitter voltage VBE (V) hFE IC 104 0.6 Switching time ton,tstg,tf (µs) Collector current IC (A) 1.4 10 3 0.003 0.01 0.03 0.01 0.1 0.3 1 Collector current IC (A) 3 0 2 4 6 Collector current IC (A) 8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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