ETC 2SD2527P

Power Transistors
2SD2527
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification with high forward current transfer ratio
3.0±0.5
2.9±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
8
A
Collector current
IC
4
A
Base current
IB
1
A
40
W
TC = 25°C
PC
Ta = 25°C
φ 3.2±0.1
15.0±0.5
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one
screw
13.7±0.2
4.2±0.2
Solder Dip
■ Features
Collector power
dissipation
4.6±0.2
9.9±0.3
1.4±0.2
1.6±0.2
2.6±0.1
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
1
2
3
1: Base
2: Collector
3: Emitter
TO-220D Package
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics TC = 25°C
Parameter
Symbol
Collector cutoff current
Conditions
ICBO
VCB = 80 V, IE = 0
Min
Typ
Max
Unit
100
µA
ICEO
VCE = 40 V, IB = 0
100
µA
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
100
µA
Collector to emitter voltage
VCEO
Forward current transfer ratio *
Collector to emitter saturation voltage
IC = 25 mA, IB = 0
60
hFE
VCE = 4 V, IC = 0.8 A
500
VCE(sat)
IC = 3 A, IB = 0.075 A
V
2 000
0.7
V
Transition frequency
fT
VCE = 12 V, IC = 0.3 A, f = 10 MHz
30
MHz
Storage time
tstg
IC = 3 A, IB1 = 0.06 A, IB2 = − 0.06 A, VCC = 50 V
20
µs
Note) *: Rank classification
Rank
hFE
Q
P
500 to 1 200 800 to 2 000
1
2SD2527
Power Transistors
IC  VCE
IC  VBE
VCE(sat)  IC
5
Collector to emitter saturation voltage VCE(sat) (V)
1.6
TC=25˚C
Collector current IC (A)
1.2
IB=1.0mA
1.0
0.9mA
0.8mA
0.8
0.7mA
0.6mA
0.6
0.5mA
0.4mA
0.4
0.3mA
4
3
2
1
0.2mA
0.2
0.1mA
0
0
0
2
4
6
8
10
12
0
Collector to emitter voltage VCE (V)
0.2
0.4
Transition frequency fT (MHz)
Forward current transfer ratio hFE
1.2
1
10–1
10–2
10–3
10–2
103
102
10–1
1
10
Collector current IC (A)
fT  I C
ton, tstg, tf  IC
100
VCE=12V
f=10MHz
TC=25˚C
100
30
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=40 (IB1=–IB2)
VCC=50V
TC=25˚C
30
10
tstg
3
tf
1
ton
0.3
0.1
0.03
10–1
1
10
Collector current IC (A)
Area of safe operation (ASO)
Non repetitive pulse
TC=25˚C
30
Collector current IC (A)
1.0
300
VCE=4V
10
10–2
ICP
10
t=1ms
IC
10ms
3
1s
1
0.3
0.1
3
10
30
100
300
Collector to emitter voltage VCE (V)
2
0.8
IC/IB=40
Base to emitter voltage VBE (V)
hFE  IC
104
0.6
Switching time ton,tstg,tf (µs)
Collector current IC (A)
1.4
10
3
0.003 0.01 0.03
0.01
0.1
0.3
1
Collector current IC (A)
3
0
2
4
6
Collector current IC (A)
8
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2001 MAR