Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type Unit: mm 16.7±0.3 • High collector to base voltage VCBO • Full-pack package which can be installed to the heat sink with one screw Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO 350 V 2SD1263 2SD1263A 2SD1263 VCEO 2SD1263A 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 2.54±0.3 250 5.08±0.5 V 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F Package 300 1 2 3 VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 0.75 A PC 35 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power dissipation TC = 25°C Ta = 25°C 0.5+0.2 –0.1 0.8±0.1 400 Emitter to base voltage 1.3±0.2 1.4±0.1 Solder Dip (4.0) ■ Features 10.0±0.2 7.5±0.2 0.7±0.1 For power amplification 2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SD1263 Collector cutoff 2SD1263 current 2SD1263A Emitter cutoff current Collector to emitter voltage ICES 2SD1263A 2SD1263 ICEO Conditions Max Unit VCE = 350 V, VBE = 0 1 mA VCE = 400 V, VBE = 0 1 VCE = 150 V, IB = 0 1 VCE = 200 V, IB = 0 1 IEBO VEB = 5 V, IC = 0 VCEO IC = 30 mA, IB = 0 hFE1 * VCE = 10 V, IC = 0.3 A 70 hFE2 VCE = 10 V, IC = 1 A 10 VBE VCE = 10 V, IC = 1 A VCE(sat) IC = 1 A, IB = 0.2 A 2SD1263A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Min Typ 1 250 mA mA V 300 250 1.5 1 V V fT VCE = 5 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 A, 0.5 µs Storage time tstg VCC = 50 V 2 µs Fall time tf 0.5 µs Note) *: Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 2SD1263, 2SD1263A Power Transistors PC T a IC VCE 40 (1) 30 20 (2) 10 4.0 TC=25˚C 1.0 IB=14mA 12mA 10mA 0.8 8mA 0.6 6mA 0.4 4mA 0.2 2mA 25˚C TC=100˚C –25˚C 2.4 1.6 0.8 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) IC 1 3000 25˚C –25˚C 0.1 0.03 0.1 0.3 1 300 100 TC=100˚C 25˚C –25˚C 30 10 0.1 0.3 1 3 ICP t=1ms IC 10ms DC 0.1 0.03 0.001 1 3 10 30 100 2SD1263A 2SD1263 0.01 0.003 300 3 1 1000 Collector to emitter voltage VCE (V) 0.01 0.03 0.1 0.3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 0.3 10 0.1 0.001 0.003 10 103 1 30 0.3 Area of safe operation (ASO) 3 100 Collector current IC (A) 10 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 2.4 VCE=10V f=10MHz TC=25˚C 300 3 1 0.01 0.03 3 2.0 fT I C 1000 0.03 1.6 1000 Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.01 0.01 1.2 VCE=10V 3 0.3 0.8 hFE IC IC/IB=10 10 0.4 Base to emitter voltage VBE (V) 10000 Collector current IC (A) Collector current IC (A) 3.2 (3) (4) 0 2 VCE=10V Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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