Power Transistors 2SD1755 Silicon NPN epitaxial planar type Unit: mm 7.0±0.3 For power amplification with high forward current transfer ratio ■ Absolute Maximum Ratings +0.3 1.0±0.2 10.0 –0. High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 (TC=25˚C) 7.0±0.3 VCBO 100 V VCEO 60 V Emitter to base voltage VEBO 15 V Peak collector current ICP 12 A Collector current IC 6 A Base current IB 3 A Ta=25°C dissipation 2.5 0.75±0.1 Tj Storage temperature Tstg 0.5 max. 1.1±0.1 15 PC Junction temperature 0 to 0.15 3.0±0.2 1 Collector power TC=25°C ■ Electrical Characteristics 3 2.3±0.2 150 ˚C –55 to +150 ˚C 0.9±0.1 0 to 0.15 2 W 1.3 Unit: mm 1.0 Collector to base voltage Collector to emitter voltage 3.5±0.2 2.0±0.2 1.0 Unit 1.0 max. Ratings 7.2±0.3 Symbol 10.2±0.3 Parameter 2.5±0.2 ● 1.1±0.1 0.75±0.1 2.5±0.2 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 15V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 Forward current transfer ratio hFE* VCE = 4V, IC = 1A 300 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.1A Transition frequency fT VCE = 12V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE IC = 5A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V V 2000 0.5 50 V MHz µs 0.3 1.5 µs 0.6 µs Rank classification Rank hFE Q P 300 to 1200 800 to 2000 1 Power Transistors 2SD1755 PC — Ta IC — VCE 5 15 (1) 10 5 IB=10mA 9mA 8mA 4 7mA 6mA 3 5mA 4mA 2 3mA 2mA 1 1mA (2) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 12 IC/IB=50 3 25˚C 0.1 0.03 0.01 0.1 0.3 1 3 3000 TC=100˚C 1000 25˚C –25˚C 300 100 30 10 0.01 0.03 10 0.1 0.3 1 3 0.01 0.1 0.3 1 Switching time ton,tstg,tf (µs) 300 100 30 10 3 VCE=12V f=10MHz TC=25˚C 300 100 30 10 3 1 10 3 tstg 1 tf 0.3 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 ton 0.1 ICP 10 I C t=1ms 10ms 3 300ms 1 0.3 0.1 0.03 0.01 0.01 100 10 100 0.03 30 3 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=50(IB1=–IB2) VCC=50V TC=25˚C 30 1000 10 0.03 0.1 0.01 0.03 10 ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 3 –25˚C 0.1 Collector current IC (A) 100 1 25˚C 0.3 Cob — VCB 0.3 0.3 VCE=4V 10000 1 0.1 TC=100˚C fT — IC 30000 Collector current IC (A) 3000 1 Collector current IC (A) Collector current IC (A) 100˚C 0.3 3 1000 10000 TC=–25˚C 1 IC/IB=50 hFE — IC 100000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 10 6 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 2 VCE(sat) — IC 6 Collector current IC (A) Collector power dissipation PC (W) 20 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1755 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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