Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A Unit: mm 7.0±0.3 0.8±0.2 1.0±0.2 3.5±0.2 2.0±0.2 20 VCEO emitter voltage 2SD1752A 7.0±0.3 3.0±0.2 VEBO 5 V Peak collector current ICP 20 A Collector current IC 10 A 2.5 0.75±0.1 dissipation Ta=25°C Junction temperature W 1.3 Tj 150 1 Tstg –55 to +150 3 ˚C ■ Electrical Characteristics Conditions Symbol 2SD1752 current 2SD1752A Emitter cutoff current ICBO IEBO Collector to emitter 2SD1752 voltage 2SD1752A Forward current transfer ratio 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Parameter Collector cutoff ˚C 0.9±0.1 0 to 0.15 2 2.3±0.2 Storage temperature 0.5 max. 1.1±0.1 15 PC 0 to 0.15 V 40 Emitter to base voltage Collector power TC=25°C Unit: mm 1.0 2SD1752 Unit V 50 1:Base 2:Collector 3:Emitter I Type Package 3 2.5±0.2 Collector to 40 VCBO 2 1.0 2SD1752A Ratings 1 2.5±0.2 2SD1752 base voltage +0.3 (TC=25˚C) Symbol Collector to 2.3±0.2 4.6±0.4 ■ Absolute Maximum Ratings Parameter 0.85±0.1 0.4±0.1 1.0 max. ● 10.0 –0. ● 1.1±0.1 0.75±0.1 7.2±0.3 ● Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.2±0.3 ● 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 min 50 VCB = 50V, IE = 0 50 VEB = 5V, IC = 0 50 20 IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 VCE = 2V, IC = 3A 90 hFE2 max VCB = 40V, IE = 0 VCEO * typ Unit µA µA V 40 260 Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 0.33A Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 0.33A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz 120 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 200 pF Turn-on time ton 0.3 µs Storage time tstg 0.4 µs Fall time tf 0.1 µs *h FE2 IC = 3A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 20V 0.6 1.5 V V Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1752, 2SD1752A PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) (1) 15 Collector to emitter saturation voltage VCE(sat) (V) 10 IB=100mA Collector current IC (A) Collector power dissipation PC (W) 20 10 5 90mA 80mA 8 70mA 60mA 50mA 6 40mA 4 30mA 20mA 2 10mA (2) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 6 3 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.03 0.01 0.1 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=20 10 0.3 1 3 10 30 Collector current IC (A) hFE — IC fT — IC IC/IB=20 25˚C 1 –25˚C TC=100˚C 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.3 Collector current IC (A) ton 0.3 tstg 0.1 tf 1ms 3 300ms 1 0.3 0.1 0.01 0.01 2 3 4 Collector current IC (A) 2 t=10ms 0.03 0.03 5 100 30 10 3 1 1 3 10 30 100 300 0.1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) IC 10 2SD1752 1 1 30 Non repetitive pulse TC=25˚C 30 ICP 3 0 10 Area of safe operation (ASO) Collector current IC (A) Switching time ton,tstg,tf (µs) 10 3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=30(IB1=–IB2) VCC=20V TC=25˚C 30 1 Collector current IC (A) ton, tstg, tf — IC 100 300 0.3 1 0.1 30 Transition frequency fT (MHz) 3 VCE=10V f=1MHz TC=25˚C VCE=2V 1000 2SD1752A 10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1000 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD1752, 2SD1752A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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