Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 2.0 0.8±0.1 2.54±0.3 5.08±0.5 1 –130 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –7 V Peak collector current ICP –6 A Collector current IC –3 A Ta=25°C Junction temperature Tj Storage temperature Tstg 0 to 0.4 1.1 max. 5.08±0.5 150 ˚C –55 to +150 ˚C 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –100V, IE = 0 Emitter cutoff current IEBO VEB = –5V, IC = 0 Collector to emitter voltage VCEO IC = –10mA, IB = 0 –80 hFE1 VCE = –2V, IC = – 0.1A 45 hFE2* VCE = –2V, IC = – 0.5A 90 Forward current transfer ratio R0.5 R0.5 2.54±0.3 W 1.3 ■ Electrical Characteristics 1.0±0.1 0.8±0.1 30 PC 6.0±0.3 14.7±0.5 VCBO 3.4±0.3 +0.4 Collector to base voltage Unit: mm 8.5±0.2 +0 Unit 1.5–0.4 Ratings 10.0±0.3 Symbol dissipation 1:Base 2:Collector 3:Emitter N Type Package 3 2.0 Parameter Collector power TC=25°C 2 (TC=25˚C) 4.4±0.5 ■ Absolute Maximum Ratings 0.5max. 3.0–0.2 ● 1.1max. 4.4±0.5 ● 1.0±0.1 1.5max. Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power switching Complementary to 2SD1254 typ max Unit –10 µA –50 µA V 260 Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = – 0.1A – 0.5 V Base to emitter saturation voltage VBE(sat) IC = –2A, IB = – 0.1A –1.5 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = – 0.5A, IB1 = –50mA, IB2 = 50mA 30 MHz 0.3 µs 1.1 µs 0.3 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note)The part number in the parenthesis shows conventional part number. 1 Power Transistor 2SB0931 PC — Ta IC — VCE VCE(sat) — IC –100 –6 (1) 30 20 10 –5 Collector current IC (A) (2) IB=–100mA –4 –80mA –60mA –3 –40mA –30mA –2 –20mA –1 –16mA –12mA –8mA (3) –4mA 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –8 –10 –3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 –1 –3 30 10 3 10 10 –100 Collector to base voltage VCB (V) –3 –10 1 tstg 0.3 Non repetitive pulse TC=25˚C –30 3 –10 –3 ICP t=0.5ms IC 10ms 1ms –1 300ms – 0.3 ton tf 0.1 –1 Area of safe operation (ASO) – 0.1 – 0.03 0.01 –30 30 –100 0.03 –10 100 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–50V Ta=25˚C 30 Switching time ton,tstg,tf (µs) 100 –3 300 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 ton, tstg, tf — IC 300 –10 3 100 1000 –3 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) IE=0 f=1MHz TC=25˚C –1 Collector current IC (A) 1000 Cob — VCB –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 3000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 10000 1 – 0.1 – 0.3 – 0.03 VCE=–2V 3000 Collector current IC (A) 3000 25˚C –25˚C fT — IC 1000 – 0.3 TC=100˚C – 0.1 Transition frequency fT (MHz) –10 –25˚C 25˚C –1 10000 IC/IB=20 –30 TC=–100˚C –3 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –6 10000 –1 Collector output capacitance Cob (pF) –4 –10 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 2 –2 IC/IB=20 –30 – 0.3 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector to emitter saturation voltage VCE(sat) (V) 40 0 – 0.8 –1.6 –2.4 Collector current IC (A) –3.2 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistor 2SB0931 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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