Transistors 2SD1992A Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 ■ Features 3.5±0.1 For general amplification Complementary to 2SB1321A 0.85 14.5±0.5 0.65 max. • Low collector to emitter saturation voltage VCE(sat) • Allowing supply with the radial taping +0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 3 2.5±0.1 Parameter 2.5±0.5 +0.1 2.5±0.5 0.45−0.05 0.45−0.05 1: Emitter 2: Collector 3: Base MT1 Type Package Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 20 V, IE = 0 0.1 µA ICEO VCE = 20 V, IB = 0 1 µA Collector to base voltage VCBO IC = 10 µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 7 Forward current transfer ratio hFE1 *2 VCE = 10 V, IC = 10 mA 85 VCE = 10 V, IC = 500 mA 40 Collector cutoff current hFE2 *1 Collector to emitter saturation voltage *1 Transition frequency VCE(sat) fT Collector output capacitance Cob V 340 90 IC = 300 mA, IB = 30 mA 0.35 VCB = 10 V, IE = −10 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 6 0.6 V MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SD1992A Transistors IC VCE 700 700 600 500 400 300 200 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 600 500 4 mA 400 3 mA 300 2 mA 200 0 1 mA 40 60 80 100 120 140 160 0 2 4 IC / IB = 10 10 3 1 Ta = 75°C −25°C 0.1 0.03 0.01 0.01 0.03 0.1 1 0.3 3 3 25°C 1 Ta = 75°C −25°C 0.3 0.1 3 160 120 80 40 −20−30 −50 −100 Emitter current IE (mA) 5 6 7 8 9 10 250 Ta = 75°C 200 25°C −25°C 150 100 50 0.1 0.3 1 3 0 0.01 0.03 10 6 4 2 2 3 5 10 3 10 IC = 2 mA Ta = 25°C 100 80 60 40 20 0 1 1 VCER RBE 8 0 0.3 120 IE = 0 f = 1 MHz Ta = 25°C 10 0.1 Collector current IC (A) Cob VCB 200 4 VCE = 10 V Collector current IC (A) Collector output capacitance Cob (pF) Transition frequency fT (MHz) 2 0.03 12 VCB = 10 V Ta = 25°C 2 1 hFE IC 10 fT IE −10 0 300 IC / IB = 10 0.01 0.01 0.03 10 240 −2 −3 −5 200 Base current IB (mA) 30 Collector current IC (A) 0 −1 300 VBE(sat) IC 30 25°C 400 0 8 10 12 14 16 18 20 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0.3 500 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) 100 6 Forward current transfer ratio hFE 20 600 100 Collector to emitter voltage VCER (V) 0 VCE = 10 V Ta = 25°C 700 100 100 0 IC IB 800 Collector current IC (mA) 800 Collector current IC (mA) Collector power dissipation PC (mW) PC Ta 800 20 30 50 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) Transistors 2SD1992A ICEO Ta 104 VCE = 10 V ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (°C) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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