Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1297 Unit: mm 5.0±0.2 4.0±0.2 ● ● High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7±0.2 ● 8.0±0.2 ■ Features ■ Absolute Maximum Ratings 13.5±0.5 0.7±0.1 (Ta=25˚C) +0.15 Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V 1 2 3 Peak collector current ICP 1 A 2.54±0.15 Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1.27 1.27 Parameter Symbol Conditions min VCEO IC = 0.1mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 hFE1* VCE = 10V, IC = 150mA 130 50 hFE2 VCE = 5V, IC = 500mA Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz *h FE1 1:Emitter 2:Collector 3:Base TO–92NL Package (Ta=25˚C) Collector to emitter voltage Forward current transfer ratio +0.15 0.45 –0.1 2.3±0.2 0.45 –0.1 Parameter typ max 120 Unit V 5 V 330 1 1.2 200 V V MHz 20 pF Rank classification Rank R S hFE1 130 ~ 220 185 ~ 330 1 2SD1937 Transistor IC — VCE VCE(sat) — IC 200 1.0 Collector current IC (mA) 0.8 0.6 0.4 0.2 160 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 80 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 400 300 Ta=75˚C 25˚C 200 –25˚C 100 1 3 10 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 Single pulse Ta=25˚C 3 ICP 1 t=10ms IC 0.3 t=1s 0.1 0.03 0.01 0.003 0.001 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Collector current IC (A) VCB=10V Ta=25˚C 350 300 250 200 150 100 1 3 10 30 100 300 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) Collector current IC (A) Collector output capacitance Cob (pF) 0.3 Collector current IC (A) 0 2 0.1 10 10 1 50 Cob — VCB 3 3 fT — I E 500 0 0.01 0.03 10 80 1 10 400 Collector current IC (A) 70 12 30 IC/IB=10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 10 600 IC/IB=10 0.01 0.01 0.03 8 IC/IB=10 hFE — IC 100 1 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 4 Transition frequency fT (MHz) Collector power dissipation PC (W) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 1000 Collector to emitter voltage VCE (V) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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