Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 Unit: mm 0.15 1.0 14.5±0.5 +0.1 (Ta=25˚C) 0.45–0.05 2.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2.5±0.5 1 2 3 2.5±0.1 ■ Absolute Maximum Ratings 0.65 max. 0.85 ● Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. +0.1 ● 0.45–0.05 ● 0.8 ■ Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –25V, IE = 0 –100 nA ICEO VCE = –20V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –25 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –2V, IC = –0.5A*2 90 hFE2 VCE = –2V, IC = –1A*2 25 VCE(sat) IC = –500mA, IB = –50mA*2 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 150 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 15 Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage V 350 – 0.4 –1.2 FE1 V MHz 25 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 180 ~ 350 1 Transistor 2SB1378 PC — Ta IC — VCE 700 –1.0 –9mA –8mA –7mA 600 – 0.8 500 –6mA –5mA – 0.6 400 300 –4mA –3mA – 0.4 200 –2mA 100 –30 –10 –3 –1 Ta=75˚C 25˚C – 0.3 –25˚C – 0.03 0 40 60 80 100 120 140 160 0 –1 –10 –3 Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) Cob — VCB IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –30 –100 Collector to base voltage VCB (V) –3 –10 320 VCB=–10V Ta=25˚C 500 400 300 –1 Collector current IC (A) fT — I E Ta=75˚C 25˚C 200 –25˚C 100 280 240 200 160 120 80 40 0 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) 80 0 –1 –6 VCE=–2V Forward current transfer ratio hFE –30 70 –5 600 IC/IB=10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –4 hFE — IC –100 –1 –3 Collector to emitter voltage VCE (V) VBE(sat) — IC 25˚C –2 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 – 0.1 –1mA – 0.2 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IB=–10mA 0 2 VCE(sat) — IC –100 –1.2 Collector current IC (mA) Collector power dissipation PC (mW) 800 –10 1 3 10 30 100 300 Emitter current IE (mA) 1000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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