ETC ACPM-7812

Agilent ACPM-7812
CDMA/AMPS Power Amplifier Module
Data Sheet
Features
• Operating frequency:
824 – 849 MHz
• 28.5 dBm linear output power
@ 3.4 V
• High efficiency: 40% PAE
• Internal 50 ohm matching networks
for both RF IN/OUT
Description
The ACPM-7812 is a fully
matched CDMA Power Amplifier
module. Designed around Agilent
Technologies new Enhancement
Mode pHEMT (E-pHEMT)
process, the ACPM-7812 offers
premium performance in a small,
easy to use package. Fully
matched to 50 Ohms on the input
and output allows faster design,
less overall system optimization
and more reliable performance in
production.
The amplifier has excellent ACPR
and efficiency performance, at
both high and medium Pout
levels, with a single bias control
voltage. For lower quiescent
current, a dynamic bias control
circuit can be used; Vcntl = 1.2V
to 2.7V.
• 3.2 – 4.2 V linear operation
• cdma2000 1xRTT capable
• Only 5 SMT parts needed
• Dynamic bias control or
Designed in a surface mount RF
package, the ACPM-7812 is cost
and size competitive.
• Very low quiescent current with
single control voltage
• 6.0 x 6.0 x 1.8 mm SMT package
The ACPM-7812 is another key
component of the Agilent
CDMAdvantage RF chipset.
• Wireless data terminals
Package Circuit Diagram
Pin 6
Applications
• 800 MHz CDMA handsets
GND
Vdd1
Pin 1
Vdd1
RF Out
Pin 5
RF Out
RF In
Pin 2
RF In
GND
Pin 4
Vdd2
Vdd2
Vcntl
Pin 3
Vcntl
Bottom View of Package
Absolute Maximum Ratings [1]
Parameter
Unit
Value
Vdd Supply Voltage
V
5.0
Power Dissipation [2]
W
2.5
Bias Current
A
1.5
Control Voltage (Vcntl)
V
3.0
Thermal Resistance[2] θjc = 26°C/W
Recommended operating range of Vdd = 3.2 to
4.2 V, Ta = -30 to +85°C
(reduced performance at 3.0 V and 100°C)
Amplifier Input RF Power
dBm
10
Junction Temperature
°C
+150
Storage Temperature (case temperature)
°C
-30 to +100
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Tcase = 25°C
Package Marking and Dimensions
Gnd
Vdd1
RF Out
RF in
ACPM-7812
YYWWDD
Gnd
Vdd2
Vcntl
0.236 ± 0.0120
(6.00 ± 0.30)
0.234 ± 0.003
(5.94 ± 0.08)
Square lid cover
Top View (package with lid cover on top)
Maximum 0.071 (1.8)
PCB
Side View
.236 ± 0.0120 (6 ± 0.30)
I/O Pad
.118 (3.00)
.078 (1.98)
.048 (1.22)
.006 (0.16)
.098 (2.49)
.030 (0.76)
.005 (0.13)
.034 (0.86)
Bottom View (footprint)
2
R.020 (R0.51)
.236 ± 0.0120
(6.00 ± 0.30)
Electrical Characterization Information
All tests are done in 50Ω system at Vdd = 3.4V, 25°C , unless noted otherwise.
Parameter
Units
Min
MHz
824
dB
24
Typ
Max
Comments
Cellular CDMA
Frequency Range
849
Gain (Fixed Cntl Voltage)
(Pout = 28.5 dBm)
26
Vcntl= 2.5V
(Pout = 13 dBm)
dB
28
Vcntl= 2.5V
(Pout = -5 dBm)
dB
28
Vcntl= 2.5V
Gain (Dynamic Cntl Voltage)
(Pout = 28.5 dBm)
dB
26
Vcntl= 2.5V
(Pout = 13 dBm)
dB
24
24
Vcntl= 1.6V
(Pout = -5 dBm)
dB
19
Vcntl= 1.2V
40
Vcntl= 2.5V
8.5
Vcntl= 1.6V
Power Added Efficiency
Pout = 28.5 dBm
%
Pout = 16 dBm
%
Total Supply Current
36
mA
500
Pout = 28.5 dBm, Vcntl= 2.5V
100
Pout = 13 dBm, Vcntl= 1.6V
30
Pout = -5 dBm, Vcntl= 1.2V
ACPR @ ± 0.885 MHz offset
dBc/30 kHz
-45
-48
Pout ≤ 28.5 dBm
ACPR @ ± 1.98 MHz offset
dBc/30 kHz
-56
-59
Pout ≤ 28.5 dBm
Quiescent Current
mA
Leakage Current
µA
70
Pout ≤ 28.5 dBm, Vcntl= 2.5V
40
Pout ≤ 13 dBm, Vcntl= 1.6V
30
Pout ≤ 0 dBm, Vcntl= 1.2V
10
Input VSWR (Pout = 28.5 dBm)
2.0:1
Input VSWR (Pout = 16 dBm)
2.5:1
Noise Figure
dB
4.5
Noise Power @ 45 MHz offset in 869 – 894 MHz
dBm/Hz
-141
Stability (Spurious): Load VSWR 5:1
dBc
-50
30
no RF signal, Vcntl = 0V
-138
All phases
Harmonic Suppression:
2Fo
dBc
-40
-30
3Fo
dBc
-40
-30
Frequency Range
MHz
824
Gain (Pout = 31.0 dBm)
dB
24
26
Vcntl= 2.5V
%
47
51
Vcntl= 2.5V
AMPS
849
Power Added Efficiency
Pout = 31.0 dBm
Noise Power @ 45 MHz offset in 869 – 894 MHz
3
dBm/Hz
-141
-138
Worst case for Pout ≤ 31.0 dBm
40
50
29
20
40
0
30
28
27
PAE (%)
30
GAIN (dB)
GAIN (dB)
Typical Performance, data measured in 50Ω system, Vdd = 3.4V, Vcntl = 2.5 V, T = 25°C and Freq = 836 MHz unless noted otherwise.
-20
20
-40
26
10
-60
25
0
5
10
15
20
25
0
0
30
0.4
0.8
1.6
2.8
2.4
0
500
Idd (mA)
400
300
160
-40
140
-45
120
-50
100
80
60
200
40
100
10
15
20
25
30
5
10
15
5
-70
-75
-80
10
15
30
Pout (dBm)
Figure 6. ACPR (885 kHz) vs. Pout.
35
2fo
3fo
-35
30
GAIN (dB)
HARMONIC SUPPRESSION (dBc)
-65
25
-65
0
-30
-60
20
-60
20
Figure 5. Idd vs. Output Power (Vdd = 3.4V,
Vcntl = 2.5V and 1.6V.
-55
30
-55
Pout (dBm)
-50
25
-80
0
Pout (dBm)
Figure 4. Idd vs. Output Power.
20
-75
0
0
15
-70
Vcntl = 2.5V
Vcntl = 1.6V
20
5
10
Figure 3. PAE vs. Pout.
ACPR1 (dBc)
600
0
5
Pout (dBm)
Figure 2. Gain vs. Vcntl.
Figure 1. Gain vs. Pout.
ACPR2 (dBc)
2.0
Vcntl (V)
Pout (dBm)
Idd (mA)
1.2
-40
-45
25
-50
-85
-55
-90
0
5
10
15
20
25
30
60
50
PAE (%)
40
30
20
10
0
20
25
Pout (dBm)
Figure 10. AMPS PAE vs. Pout.
4
20
25
Figure 8. 2nd/3rd Harmonics vs. Pout.
Figure 7. ACPR (1.98 MHz) vs. Pout.
15
15
Pout (dBm)
Pout (dBm)
10
10
30
35
30
20
10
15
20
25
Pout (dBm)
Figure 9. AMPS Gain vs. Pout.
30
35
Ordering Information
Part Number
No. of Devices
Container
ACPM-7812-BLK
10
Bulk
ACPM-7812-TR1
2000
13” Tape and Reel
Tape Dimensions and Orientation
4.00 ± 0.10
See Note 2
0.30 ± 0.05
∅1.55 ± 0.05
1.55 ± 0.05
2.00 ± 0.05
5.50 ± 0.05
6.40 ± 0.10
(Bo)
2.00 ± 0.10
6.40 ± 0.10
6.40 ± 0.10
8.0 ± 0.10
∅1.50 (min)
6.40 ± 0.10
(Ao)
5
ACPM-78xx
YYWW
Notes:
1. Ao and Bo measured at 0.3 mm above base of pocket.
2. 10 hole pitch cumulative tolerance ±0.2 mm
3. Drawing not to scale.
PA orientation in carrier tape
12.00 ± 0.30
Reel Drawing
13.20 ± 0.50
φ329.2 ± 0.5
CL
φ100.00 ± 0.5
18.40
(max.)
RECYCLE SYMBOL
SLOT 5.00 ± 0.50
φ329.2 ± 0.5
ESD Label
76.2 mm x 31.0 mm
(See Below)
I T W 1 304
φ100.00 ± 0.5
φ20.20 (Min.)
DETAIL X
RECYCLE
SYMBOL
φ13.0 ± 0.50
0.5
– 0.20
M
2.0
0±
CL
DETAIL X
EMBOSSED LINE x2
90 mm Length
Lines 147 mm away from center point
EMBOSSED "M"
5 mm Height
All dimensions in mm.
6
Application Information
The following material is presented to assist in general design and use of the APCM-7812.
• 3.0V Characterization, for use in Data Card Applications
• cdma2000 1XRTT Description and Characterization data
• Design tips on various methods to control the bias on Vcntl pin
• Description of ACPR measurement methods
• Description of Agilent evaluation demoboard for ACPM-7812
• IR Reflow Profile (applicable for all Agilent E-pHEMT PAs)
3.0 V Characterization, Data Card Applications
All tests are done in 50Ω system at Vdd = 3.0 V, 25°C , unless noted otherwise.
Parameter
Units
Min
MHz
824
Typ
Max
Comments
800 MHz CDMA
Frequency Range
849
Gain (Fixed Cntl Voltage)
(Pout = 28.5 dBm)
dB
26
Vcntl = 2.5V
(Pout = 13 dBm)
dB
28
Vcntl = 2.5V
(Pout = -5 dBm)
dB
28
Vcntl = 2.5V
%
42
Vcntl = 2.5V
%
9
Vcntl = 2.5V
mA
500
Pout = 28.5 dBm, Vcntl= 2.5V
100
Pout = 13 dBm, Vcntl= 1.6V
30
Pout = -5 dBm, Vcntl= 1.2V
Power Added Efficiency
Pout = 28.5 dBm
Pout = 16 dBm
Total Supply Current
ACPR @ ± 0.885 MHz offset
dBc/30 kHz
-43
Pout ≤ 28.5 dBm
ACPR @ ± 1.98 MHz offset
dBc/30 kHz
-56
Pout ≤ 28.5 dBm
Quiescent Current
mA
60
Pout ≤ 28.5 dBm, Vcntl = 2.5V
Input VSWR
(Pout = 28.5 dBm)
2.0:1
(Pout = 16 dBm)
2.5:1
Noise Figure
dB
4.5
Noise Power @ 45 MHz offset in 869 – 894 MHz
dBm/Hz
-141
Stability (Spurious): Load VSWR 5:1
dBc
-50
2Fo
dBc
-40
3Fo
dBc
-40
Harmonic Suppression
7
All phases
Typical Performance
Data measured in a 50Ω system, Vdd = 3.0V, Vcntl = 2.5V, T = 25°C, Freq = 836 MHz.
30
50
29
40
28
30
600
500
27
Idd (mA)
PAE (%)
GAIN (dB)
400
20
300
200
26
10
25
100
0
0
5
10
15
20
25
30
0
0
5
10
Pout (dBm)
30
-50
-45
-55
-50
-60
-55
-60
-70
-80
15
20
25
30
Pout (dBm)
20
10
0
-10
-20
-30
-40
-50
0
0.4
0.8
1.2
1.6
Vcntl (V)
Figure 17. Gain vs. Vcntl.
5
10
15
20
25
Figure 15. ACPR (1.98 MHz) vs. Pout.
30
2.0
2.4
2.8
20
30
25
2fo
3fo
-35
-40
-45
-50
-55
0
Pout (dBm)
Figure 14. ACPR (885 kHz) vs. Pout.
15
-30
-85
10
10
Figure 13. Idd vs. Pout.
-70
-75
5
5
Pout (dBm)
-65
-65
0
0
HARMONIC SUPPRESSION (dBc)
-40
ACPR2 (dBc)
ACPR1 (dBc)
25
Figure 12. PAE vs. Pout.
-75
GAIN (dB)
20
Pout (dBm)
Figure 11. Gain vs. Pout.
8
15
30
10
15
20
25
Pout (dBm)
Figure 16. 2nd/3rd Harmonics vs. Pout.
30
cdma2000 1xRTT Characterization
1.2288Mchip/s IS-95. However, in
1X RTT, the reverse link transmits more than one code channel
to accommodate the high data
rates. The minimum configuration consists of a reverse pilot
(R-Pilot) channel for synchronous detection by the base
transceiver stations (BTS) and a
reverse fundamental channel
(R-FCH) for voice. Additional
System Description
CDMA2000 is the TIA’s standard
for third generation (3G) technology and is an evolution of the
IS-95 CDMA format. CDMA2000
includes 1X RTT in the singlecarrier mode and 3X RTT in the
multi-carrier mode. CDMA2000
1X RTT, being an extension of the
IS-95 standard, has a chip rate of
channels such as the reverse
supplemental channels (R-SCHs)
and the reverse dedicated
channel (R-DCCH) are used to
send data or signaling information. Channels can exist at
different rates and power levels.
Table 1 shows the transmitter
specification in CDMA2000
reverse link.
Specification
Spread Rate1
ERP at Maximum
Lower limit +23 dBm
Output Power
Upper limit +30 dBm
Minimum Controlled Output Power
-50 dBm/1.23 MHz
Waveform Quality Factor and Frequency Accuracy
>0.944
Spurious Emission at
Maximum RF output
power offset frequency
within the range
SR1, Band Class 0(Cellular band)
SR1, Band Class1(PCS band)
885 kHz to 1.98 MHz
Less stringent of -42 dBc/30 kHz
or -54 dBm/1.23 MHz
885 kHz to 1.98 MHz
Less stringent of -42 dBc/30 kHz
or -54 dBm/1.23 MHz
1.98 MHz to 3.125 MHz
Less stringent of -54 dBc/30 kHz
or -54 dBm/1.23 MHz
1.98 MHz to 2.25 MHz
Less stringent of -50 dBc/30 kHz
or -54 dBm/1.23 MHz
3.125 MHz to 5.625 MHz
-13 dBm/100 kHz
2.25 MHz to 6.25 MHz
-13 dBm/1 MHz
Table 1. Transmitter Specification in Reverse Link.
Typical channel configurations below are based on the transmitter test condition in the reverse link.
1) “Basic” Voice only configuration
– R-PICH @ -5.3 dB
– R-FCH @ -1.5 dB 9.6 kbps
2) Voice and Data configuration
– R-PICH @ -5.3 dB
– R-FCH @ -4.54 dB 9.6 kbps
– R-SCH1 @ -4.54 dB 9.6 kbps
3) Voice and Control configuration
– R-PICH @ -5.3 dB
– R-FCH @ -3.85 dB 9.6 kbps
– R-DCCH @ -3.85 dB 9.6 kbps
4) Control channel only configuration
– R-PICH @ -5.3 dB
– R-DCCH @ -1.5 dB 9.6 kbps
9
Combinations of these channels
will increase the peak to average
power ratio for higher data rates.
The complementary cumulative
distribution function (CCDF)
measurement characterizes the
peak to average power statistics
of CDMA2000 reverse link. For
reference, the system specifications of peak to average power
ratio of IS-95 and CDMA2000 IX
RTT are 3.9 dB and 5.4 dB at
1% CCDF respectively. Higher
peak to average power ratio
requires a higher margin, both in
higher power gain and in
improved thermal stability for PA
linearity to meet the minimum
system specifications. Test
results for the ACPM-7831 as
tested under 4 cdma2000 channel configurations are shown in
the table below.
Electrical Data
All tests are done in 50Ω system at Vdd = 3.4V, 25°C , unless noted otherwise.
Parameter
Units
Measured
Comments
800 MHz CDMA
Frequency Range
MHz
824– 849
(Pout = 28.5 dBm)
dB
26
Vcntl = 2.5V
(Pout = 13 dBm)
dB
28
Vcntl = 2.5V
(Pout = -5 dBm)
dB
28
Vcntl = 2.5V
Gain (Fixed Control Voltage)
Gain (Fixed Control Voltage)
(Pout = 28.5 dBm)
dB
26
Vcntl = 2.5V
(Pout = 13 dBm)
dB
24
Vcntl = 1.6V
(Pout = -5 dBm)
dB
19
Vcntl = 1.2V
Power Added Efficiency
Pout = 28.5 dBm
%
40
Pout = 16 dBm
%
8.5
ACPR @ ± 0.885 MHz offset
dBc/30 kHz
• Basic
-59
Pout ≤ 28.5 dBm
• Voice + Data
-48
Pout ≤ 28.5 dBm
• Voice + Control
-45
Pout ≤ 28.5 dBm
• Control only
-56
Pout ≤ 26.0 dBm
• Basic
-59
Pout ≤ 28.5 dBm
• Voice + Data
-61
Pout ≤ 28.5 dBm
ACPR @ ± 1.98 MHz offset
dBc/30 kHz
• Voice + Control
-60
Pout ≤ 28.5 dBm
• Control only
-66
Pout ≤ 26.0 dBm
Typical Channel Configurations
(a) “Basic” Voice only configuration
• R-PICH @ -5.3 dB
• R-FCH @ -1.5 dB 9.6 kbps
(b) Voice and Data configuration
• R-PICH @ -5.3 dB
• R-FCH @ -4.54 dB 9.6 kbps
• R-SCH1 @ -4.54 dB 9.6 kbps
Definitions:
R-PICH Reverse Pilot Channel
R-FCH Reverse fundamental channel
R-SCH Reverse supplemental channel
R-DCCH Reverse dedicated control channel
Peak to average power ration (Pout = 16 dBm)
CCDF(%)
Basic
Voice + Data
Voice + CNTL
CNTL only
(c) Voice and Control configuration
• R-PICH @ -5.3 dB
• R-FCH @ -3.85 dB 9.6 kbps
• R-DCCH @ -3.85 dB 9.6 kbps
10
1.82
3.04
3.08
3.73
1
3.19
4.2
4.55
5.21
0.1
3.99
4.96
5.42
6.05
(d) Control channel only configuration
• R-PICH @ -5.3 dB
• R-DCCH @ -1.5 dB 9.6 kbps
0.01
4.38
5.41
5.89
6.42
0.001
4.59
5.72
6.15
6.63
0.0001
4.67
5.78
6.23
6.69
10
Design Tips to use Vcntl pin
Power Amplifier Control Using
Vcntl Pin on ACPM-7812
Power amplifier control scheme
in CDMA systems is one of the
important and challenging
aspects of CDMA-based handset
design. Handset designers must
balance maintaining adequate
linearity while optimizing
efficiency at high, medium and
low output power levels. The
primary method to achieve these
goals is to adjust the bias of the
PA as a function of output power.
Theoretically, the best efficiency
would be achieved when the bias
of the PA is continually adjusted
based on the output power
requirement of the PA. However,
implementing this type of circuit
is complex and costly. Therefore
several different approaches have
been developed to provide an
acceptable trade-off between
optimum efficiency and optimum
manufacturability. The following
section reviews four methods of
controlling the bias of a CDMA
power amplifier: fixed, step,
logical and dynamic.
1. Fixed Bias Control
Using a fixed bias point on the
PA is the traditional method, and
it is the simplest. In fact, a fixed
control voltage is recommended
when using Agilent’s Power
Power Mode
PA_ON
Vcntl
Power Range
Shut Down
LOW
0V
—
High Power
HIGH
2.5V*
≤ 28.5 dBm
Note: * Vcntl for Cell Band
Battery
To Duplexer
Vdd2
Vdd1 PA
Vcntl
TxIC
Switch Circut for PA
11
Baseband
IC
PA_ON
Enable
Amplifiers, Vcntl = 2.5V for the
ACPM-7812. The Vcntl pin on the
PA is controlled by PA_ON pin of
the baseband IC. When PA_ON is
HIGH, the output RF signal of the
PA is enabled, enabling the
subscriber unit to transmit the
required data. The switch circuit
supplies the Vcntl with enable/
disable (PA on/off mode).
Below is an example of how to
control the PA_ON and Vcntl pin
of the PA.
2. Step Bias Control
The PDM1 output from the
baseband IC can be used to
create a software-programmable
voltage, to be used at the phone
designer’s discretion. The twopole filter is used to improve RF
performance in terms of fast
response time. To get high
efficiency and better ACPR, the
phone designers can change
control voltage of the PA by
adjusting PDM1 voltage according
to output power of PA. A caution
when using this approach—
careful consideration must be
made to avoid an abrupt discontinuity in the output signal when
the step bias control voltage is
applied.
Below shows the example how to
control the PA_ON, PDM1 and
Vcntl pin of PA.
Power Mode
PA_ON
Vcntl
Power Range
Shut Down
LOW
0V
—
Low Power
HIGH
1.2V
~ -5 dBm
Mid Power
HIGH
1.6V
-5 dBm ~ 13 dBm
High Power
HIGH
2.5V*
13 dBm ~ 28.5 dBm
Note: Adjust PDM1 pulse waveform to set low/mid/high power mode
Battery
To Duplexer
Vdd2
Vdd1 PA
Vcntl
Baseband
IC
TxIC
Enable
Switch Circut for PA
R2
C2
12
R1
C1
PA_ON
PDM
3. Logical Bias Control
This scheme is similar to step
bias control circuit above but
also uses the PA_R0 and PA_R1
pins on a typical baseband IC.
PA_R[1:0] is an open-drain
output, requiring an external
pull-up resistor, and is used to
step the gain of the Tx signal
path by changing voltages on
Vcntl. As with the step bias
control, there must be some
consideration of the hysteresis
step to avoid an abrupt discontinuity with logical bias control
voltage.
Below shows the example how to
control the PA_R[1:0] and Vcntl
pin of PA.
Power Mode
PA_RO
PA_R1
Vcntl
Power Range
Shut Down
0
0
0V
—
Low Power
0
1
1.2V
~ -5 dBm
Mid Power
1
0
1.6V
-5 dBm ~ 13 dBm
High Power
1
1
2.5V
13 dBm ~ 28.5 dBm
Battery
Switch Circuit for
PA Enable
To Duplexer
PA-ON
Vdd2
Vdd1
TxIC
PA
Vcntl
Baseband IC
Pull-up
Resistors
Switch Circuit
13
PA-R0
PA-R1
4. Dynamic Bias Control
the gain of the Tx signal prior to
the PA. The variable output levels
from two inverting operational
amplifiers, generated and compared by TX_ADC_ADJ, provide
dynamic control voltages for the
Vcntl of 1.0V ~ 2.7V with a 0.1V
step.
Phone designers can use
TX_ADC_ADJ pin of the
baseband IC to get dynamic bias
control with Vcntl pin of PA.
TX_ADC_ADJ is a PDM output
pin produced by the TX AGC
subsystem and used to control
Battery
To Duplexer
Vdd2
Vdd1
Vcntl
TxIC
PA
Baseband IC
Vcontrol
Enable
Switch Circuit
PA_ON
R5
R3
_
R4
V1
R1
_
+
R2 Vin
C1
TX_ADC_ADJ
+
Av = -(V1/Vin) = -R3/R2,
V1 = -(R3/R2)Vin,
Vo = -(R5/R4)V1=
[(R5*R3)/(R4*R2)]*Vin
The using of combination of two
pins, PDM1 and TX_ADC_ADJ, is
another method of realizing a
dynamic bias control scheme.
The two OP Amps control the
Vcntl voltage levels with compared and integrated circuits.
Battery
To Duplexer
Vdd2
Vdd1
Vcntl
TxIC
PA
Baseband IC
Vcontrol
Enable
Switch Circuit
PA_ON
_
_
TX_ADC_ADJ
+
+
PDM1
14
ACPR Measurement Method
Adjacent-channel power ratio
(ACPR) is used to characterize
the distortion of power amplifiers
and other subsystems for their
tendency to cause interference
with neighboring radio channels
or systems. The ACPR measurement often is specified as the
ratio of the power spectral
density (PSD) of the CDMA main
channel to the PSD measured at
several offset frequencies. For the
Cellular band (824 ~ 849 MHz
transmitter channel), the two
offsets are at ±885 kHz and
±1.98 MHz and the measurement
resolution bandwidth specified is
30 kHz. These offsets are at
±1.25 MHz and ±1.98 MHz for the
PCS band (1850 ~ 1910 MHz Tx
channel).
1.23 MHz
0
-10
1st ACPR (dBc)
-20
30 kHz
-40
2nd ACPR (dBc)
30 kHz
-30
30 kHz
1st ACPR-L
-50
30 kHz
1st ACPR-U
Offset frequency
-60
-70
-80
1877.5 1878.0
2nd ACPR-U
= 1.98 MHz
2nd ACPR-L
= 1.98 MHz
1878.5
1879.0 1879.5
1880.0 1880.5
1881.0
1881.5 1882.0 1882.5
Figure 18. CDMA Adjacent-Channel Power Ratio Measurement.
Offset Frequencies 1st ACPR 2nd ACPR
Cellular Band
885 kHz
1.98 MHz
PCS Band
1.25 MHz
1.98 MHz
15
ACPR Testing Diagram Test
PA Test Setup
DC Power Supply
CH1 CH2 CH3
8593E
Spectrum
Analyzer
Vcntl
Vdd2
Vdd1
Power
Divider
20 dB
Attenuator
E4406A
VSA Transmitter
Tester
CDMA PA
ACPM7812/7831
Figure 19. ACPR PA test equipment setup.
ACPM-7812 Test Result using VSA Transmitter Tester
Figure 20. ACPR measurement using VSA Transmitter tester.
16
3 dB
Attenuator
E4437B
CDMA Signal
Generator
ACPR Test Results using Spectrum Analyzer
REF 42.8 dBm
Mkr 836 MHz
35.42 dBm
AT 30 dB
RBW = 1.0 MHz
RBW = 30 kHz
RBW = 30 kHz
Center 836 MHz
VBW 100 kHz
Span 5.000 MHz
SWP 2.00 sec
Figure 21. Example ACPR measurement using Spectrum Analyzer.
The meaning of 16 dB
The accurate ACPR measurement
using Spectrum Analyzer needs
to consider the normalization
factor that is dependent on the
Resolution Bandwidth, RBW,
settings. The above figure (measurement shown at 836 MHz for
general example) shows a comparison of the different ACPR
measurement results as a function of various RBW values. As
the RBW is reduced, less power is
captured during the measurement and consequently the
17
channel power is recorded as a
smaller value. For example, if the
main channel power is measured
as 28 dBm in a 1.23 MHz bandwidth, its power spectral density
is 28 dBm/1.23 MHz, which can
be normalized to 11.87 dBm/
30 kHz. The equation used to
calculate the normalization factor
of power spectral density is:
Normalization Factor =
10log[Normalization BW/Current BW
(Spectrum Analyzer RBW)]
= 10log[1.23X106/30X103]
= 16.13 dB
Since the ACPR in an IS95
system is specified in a 1.23 MHz
bandwidth, a channel power that
is measured using a different
RBW, can be normalized to
reflect the channel power as if it
was measured in a 1.23 MHz
bandwidth. The difference in
channel power measured in
30 kHz bandwidth and the
channel power measured in a
1.23 MHz bandwidth is 16 dB.
ACPR Test Results with Agilent ACPM-7812 CDMA PA
ACPM-7812
Test Condition: Vdd1 = Vdd2 = 3.4V typ., Vcntl = 2.5V, Frequency = 836 MHz
Test Result:
-40
-55
-45
-60
-65
ACPR2 (dBc)
ACPR1 (dBc)
-50
-55
-60
-65
-30°C
+25°C
+60°C
-75
-30°C
+25°C
+60°C
-85
-90
0
5
10
15
Pout (dBm)
1st ACPR Measurement
18
-75
-80
-70
-80
-70
20
25
30
0
5
10
15
Pout (dBm)
2nd ACPR Measurement
20
25
30
ACPM-7812 Demoboard
Operation Instructions
1) Module Description
The ACPM-7812 is a fully matched
Power Amplifier. The sample
device is provided on a demonstration PC Board with SMA
connectors for RF inputs and
outputs, and a DC connector for
all bias and control I/O’s.
2) Circuit Operation
The design of the power module
(PAM) provide bias control via
Vref (Vcntl) to achieve optimal
RF performance and power
control. The control pin is
labeled Vref (Vcntl). Please refer
to Figure 3 for the block diagram
of this PAM.
Typical Operation Conditions
(Vdd = 3.4V)
Parameter
ACPM-7812
Frequency Range
824 – 849 MHz
Output Power
28.5 dBm
Vcntl (Vref)
2.5 V
3) Maximum Ratings
Vdd
5.0V
Drain Current
1.5A
Vref (Vcntl)
3V
RF input
10 dBm
Temperature
-30 to 80°C
5) Testing
- Signal Source
The CDMA modulated signal for
the test is generated using an
Agilent ESG-D4000A (or ESGD3000A) Digital Signal Generator
with the following settings:
CDMA Setup : Reverse
Spreading: On
Bits/Symbol: 1
Data: PN15
Modulation: OQPSK
Chip Rate: 1.2288 Mcps
High Crest: On
Filter: Std
Phase Polarity: Invert
- ACPR Measurement
The ACPR (and channel power) is
measured using an Agilent 4406
VSA with corresponding ACPR
offsets for IS-98c and JSTD-8.
Averaging of 10 is used for ACPR
measurements.
- DC Connection
A DC connector is provided to
allow ease of connection to the
I/O’s. Wires can be soldered to
the connector pins, or the
connector can be removed and I/
O’s contacted via clip leads or
direct soldered connections. The
wiring of I/O’s are listed in
Figure 1 through 3 and Pin
Vdd2
Vdd1
4) Heat Sinking
19
- Device Operation
1) Connect RF Input and Output
for the band under test.
2) Terminate all unused RF
ports into 50 Ohms.
3) Connect Vdd1 and Vdd2
supplies (including remote
sensing labeled Vdd1 S and
Vdd2 S on the board). Nominal voltage is 3.4V.
4) Apply RF input power according to the values listed in
“Operation Data” in Data
Packet.
5) Connect Vref (Vcntl) supply
and set reference voltage to
the voltage shown in the data
packet. Note that the Vref
(Vcntl) pin is on the back side
of the demonstration board.
Please limit Vref (Vcntl) to not
exceed the corresponding
listed “DC Biasing Condition”
in the Data Packet. Note that
increasing Vref (Vcntl) over
the corresponding listed “DC
Biasing Condition” can result
in power decrease and
current can exceed the rated
limit.
Power Module Block Diagram
Please Note: Avoid Electrostatic Discharge
on all I/O’s.
The demonstration PC Board
provides an adequate heat sink.
Maximum device dissipation
should be kept below 2.5 Watts.
configuration table. The Vdd
sense connections are provided
to allow the use of remotesensing power supplies for
compensation for PCB traces and
cable resistance.
Input
Power
Input
Match
On Chip
Inter-stage
Match
Vcntl (Vref)
Passive
Output
Match
Output
ACPM-7812 Evaluation Board Schematic and Layout
GND
Vdd1
C1
C5
Vdd1
RF Out
C3
RF Out
RF In
Vdd2
Vcntl
RF In
C4
C2
Vcntl
Vdd2
Layer 1 – Top Metal & Solder Mask (800MHz)
C4
800 MHz
C5
C2
C1
RF IN
PIN Configuration Table
Top side
Back side
1
Ground
1b Vdd2 Sense
2
Ground
2b Ground
3
Vdd1
3b Vdd1 Sense
4
Ground
4b Vref (Vcntl)
5
Vdd2
5b Ground
20
Vdd2
GND
Vdd1
GND
GND
C3
RF OUT
C1 = 4700 pF
C2 = 470 pF
C3 = 2.2 µF
C4 = 2.2 µF
C5 = 4700 pF
Layer 2 – Ground
21
S 2ddV
DNG
S 1ddV
ferV
DNG
Layer 3 – Bottom Metal & Solder Mask
IR Reflow Soldering
Figure 22 is a straight-line
representation of the recommended nominal time-temperature profile from JESD22-A113-B
IR reflow.
TEMPERATURE (°C)
235
200
183
150
60 to 150s
above 183°C
100
50
0
30
60
Preheat
Zone
90
120
150
180
TIME (seconds)
Soak
Zone
210
Reflow
Zone
Figure 22. Time-temperature Profile for IR Reflow Soldering Process.
Process Zone
∆Temperature
∆Temperature/∆Time
Preheat Zone
25°C to 100°C
3°C/s MAX
Soak Zone
100°C to 150°C
0.5°C/s MAX (120s MAX)
Reflow Zone
150°C to 235°C (240°C MAX)
235°C to 150°C
4.5°C/s TYP
-4.5°C/s TYP
Cooling Zone
150°C to 25°C
-6°C/s MAX
Table1. IR Reflow Process Zone.
Convection or IR/Convection
Average ramp-up rate (183°C to peak)
3°C/second max.
Preheat temperature 125 (± 25)°C
120 seconds max.
Temperature maintained above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature
10 – 20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6°C/second max.
Time 25°C to peak temperature
6 minutes max.
Table 2. Classification Reflow Profiles.
Note:
All temperatures measured refer to the package body surface.
22
240
270
Cooling
Zone
300
Zone 1 – Preheat Zone
The average heat up rate for
surface-mount component on
PCB shall be less than 3° C/
second to allow even heating for
both the component and PCB.
This ramp is maintained until it
reaches 100° C where flux
activation starts.
Zone 2 – Soak Zone
The flux is being activated here
to prepare for even and smooth
solder joint in subsequent zone.
The temperature ramp is kept
gradual to minimize thermal
mismatch between solder, PC
Board and components. Overramp rate here can cause solder
splatter due to excessive oxidation of paste.
Zone 3 – Reflow Zone
The third process zone is the
solder reflow zone. The temperature in this zone rises rapidly
from 183° C to peak temperature
of 235° C for the solder to trans-
form its phase from solid to
liquids. The dwell time at melting
point 183° C shall maintain at
between 60 to 150 seconds. Upon
the duration of 10-20 seconds at
peak temperature, it is then
cooled down rapidly to allow the
solder to freeze and form solid.
Extended duration above the
solder melting point can potentially damage temperature
sensitive components and result
in excessive inter-metallic growth
that causes brittle solder joint,
weak and unreliable connections.
It can lead to unnecessary damage to the PC Board and discoloration to component’s leads.
Zone 4 – Cooling Zone
The temperature ramp down rate
is 6° C/second maximum. It is
important to control the cooling
rate as fast as possible in order
to achieve the smaller grain size
for solder and increase fatigue
resistance of solder joint.
Nominal stencil thickness
Component lead pitch
0.102 mm (0.004 in)
Lead pitch less than 0.508 mm (0.020 in)
0.152 mm (0.006 in)
0.508 mm to 0.635 mm (0.02 in to 0.025 in)
0.203 mm (0.008 in)
Lead pitch greater than 0.635 mm (0.025 in)
23
Solder Paste
The recommended solder paste is
type Sn6337A or Sn60Pb40A of
J-STD-006.
Note: Solder paste storage and shelf
life shall be in accordance with
manufacturer’s specifications.
Stencil or Screen
The solder paste may be deposited onto PCB by either screen
printing, using a stencil or
syringe dispensing. The recommended stencil thickness is in
accordance to JESD22-B102-C.
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(408) 654-8675
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6271 2451
India, Australia, New Zealand: (+65) 6271 2394
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (+65) 6271 2194
Malaysia, Singapore: (+65) 6271 2054
Taiwan: (+65) 6271 2654
Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
November 5, 2002
5988-6655EN