ONSEMI BD238G

BD237 (NPN), BD234 (PNP),
BD238 (PNP)
Preferred Devices
Plastic Medium Power
Bipolar Transistors
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
2.0 AMPERES
POWER TRANSISTORS
25 WATTS
• DC Current Gain −
•
•
•
http://onsemi.com
hFE = 40 (Min) @ IC = 0.15 Adc
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; >8000 V
Machine Model, C; >400 V
Pb−Free Packages are Available*
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TO−225
CASE 77
STYLE 1
MAXIMUM RATINGS
Symbol
BD234
BD237
BD238
Collector−Emitter Voltage
VCEO
45
80
Vdc
Collector−Base Voltage
VCBO
60
100
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
IC
2.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25_C
PD
25
W
TJ, Tstg
– 55 to + 150
_C
Rating
Collector Current
Operating and Storage Junction
Temperature Range
Unit
3 2
1
MARKING DIAGRAM
YWW
BD23xG
BD23x
x
Y
WW
G
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
Unit
_C/W
5.0
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
= Device Code
= 4, 7 or 8
= Year
= Work Week
= Pb−Free Package
Device
BD234
BD234G
BD237
BD237G
BD238
BD238G
Package
Shipping
TO−225
500 Units / Box
TO−225
(Pb−Free)
500 Units / Box
TO−225
500 Units / Box
TO−225
(Pb−Free)
500 Units / Box
TO−225
500 Units / Box
TO−225
(Pb−Free)
500 Units / Box
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 14
1
Publication Order Number:
BD237/D
BD237 (NPN), BD234 (PNP), BD238 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
Symbol
Type
Min
Max
Unit
V(BR)CEO
BD237, BD238
BD234
80
45
−
−
Vdc
BD237, BD238
BD234
−
−
0.1
0.1
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
−
1.0
hFE1
hFE2
−
−
40
25
−
Collector−Emitter Saturation Voltage (Note 1)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−
−
0.6
Vdc
Base−Emitter On Voltage (Note 1)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
−
−
1.3
Vdc
fT
−
3.0
−
MHz
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
mAdc
mAdc
−
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
−
1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
IC, COLLECTOR CURRENT (AMP)
10
The Safe Operating Area Curves indicate IC−VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power−temperature derating must be observed for both
steady state and pulse power conditions.
100 ms
1 ms
3
5 ms
TJ = 150°C
1
dc
0.3
0.1
3
1
10
BD236
BD237
30
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
0.8
IC = 0.1 A
0.25 A
0.5 A
1.0 A
0.6
TJ = 25°C
0.4
0.2
0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
http://onsemi.com
2
30
50
100
200
BD237 (NPN), BD234 (PNP), BD238 (PNP)
hFE , DC CURRENT GAIN (NORMALIZED)
1000
700
500
1.5
VCE = 2.0 V
VOLTAGE (VOLTS)
300
200
TJ = + 150°C
100
70
50
TJ = + 25°C
30
20
TJ = − 55°C
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
2.0 3.0 5.0
1.0
0.7
0.5
D = 0.5
0.3
D = 0.2
10
0.2
D = 0.1
0.1
0.07
0.05
D = 0.05
20 30
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
50
100
0
2.0 3.0 5.0
200 300 500 1000 2000
VCE(sat) @ IC/IB = 10
10
20 30
50
100
200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain
Figure 4. “On” Voltages
SINGLE PULSE
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
qJC = 3.5°C/W TYP
D = 0.01
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.03
0.02
0.01
0.01
TJ = 25°C
1.2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
t, TIME or PULSE WIDTH (ms)
Figure 5. Thermal Response
http://onsemi.com
3
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
1000
BD237 (NPN), BD234 (PNP), BD238 (PNP)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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4
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BD237/D