ETC GN04022N

New
High-power SPDT Switch GaAs MMIC for Cellular phones
■ Overview
0.2±0.05
5
4
5˚
1.25±0.10
2.1±0.1
6
1
0.2±0.1
GN04017N/04022N are MMICs for high-power SPDT (Single Pole Double
Throw) switches in antenna peripheral circuits of cellular phones. The use of
Matsushita's proprietary circuits and device technologies offers minimal loss.
This in turn results in reduced output of the transmission amplifier, contributing
to cellular phone power consumption.
(0.425)
Unit : mm
0.12+0.05
–0.02
3
2
(0.65) (0.65)
1.3±0.1
2.0±0.1
■ Features
0.9±0.1
GN04022N:0.3dB at 2.0 GHz to 2.4 GHz
0 to 0.1
● Compact S Mini type 6-pin package (2125 size).
0.9+0.2
–0.1
10˚
● Low loss GN04017N:0.25dB at 0.1 GHz to 2.0 GHz
S Mini 6-pin
■ Specifications
■ Applications
● Cellular phones (CDMA,TDMA,PCS,W-CDMA,etc)
● Communications equipment
¦ The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements.
Semiconductor Company, Matsushita Electronics Corporation
1 Kotari Yakemachi, Nagaokakyo, Kyoto, 617-8520 Japan
E00074AE
Tel. (075) 951-8151
http://www.mec.panasonic.co.jp
New publication, effective from Dec. 12 2000.
GN04017N
High Frequency Switching for Mobile Communication
(0.425)
0.2±0.05
5
6
Supply voltage
VDD
8
V
Control voltage
Vctrl(H)-Vctrl(L)
+6
V
Max. Input Level
Pin
37
dBm
Operating ambient
Topr
-30 to +90
°C
Tstg
-40 to +120
°C
1
2
3
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
0 to 0.1
temperature
Storage temperature
0.2±0.1
Unit
5˚
Rating
0.9+0.2
–0.1
Symbol
0.9±0.1
Parameters
4
1.25±0.10
2.1±0.1
■ Absolute Maximum Ratings
Unit:mm
0.12+0.05
–0.02
S Mini6-pin
■ Electrical Characterristics (Ta=25°C±3°C,Vcont(L)=0V,Vcont(H)=3.0V,f=832MHz to 925MHz)
Parameters
Symbol
Condition
min
typ
max
Unit
Insertion Loss
IL
IN-OUT1,Pin=-26dBm
−
0.20
0.45
dB
IN-OUT2,Pin=-26dBm
−
0.20
0.45
dB
IN-OUT1(IN-OUT2 ON)
23
28
−
dB
IN-OUT2(IN-OUT1 ON)
23
28
−
dB
IN-OUT1
−
1.05
1.15
dB
IN-OUT2
−
1.05
1.15
dB
Isolation
ISO
Voltage Standing Wave
VSWR
Ratio
Input 0.1dB Compression
Pin(0.1dB)
Vcorl(H)=3V
30
32
−
dBm
Input 1dB Compression
Pin(1.0dB)*1
Vcorl(H)=3V
32
34
−
dBm
Control Current
Ictrl
−
10
30
µA
Switching Time
tsw
−
0.2
1
µs
*1)Designeg Specification
■ Test Circuit
■ Pin Descriptions
100pF
OUT2
100pF
OUT1
6
5
4
1
2
3
IN
1000pF
100pF
Vctrl 2
1000pF
Vctrl 1
Pin No.
1
2
3
4
5
6
Function
Vctrl 1
IN
Vctrl 2
OUT 2
GND
OUT 1
GN04022N
High Frequency Switching for Mobile Communication
(0.425)
Unit:mm
0.2±0.05
■ Absolute Maximum Ratings
5
Supply voltage
VDD
8
V
Control voltage
Vctrl(H)-Vctrl(L)
+6
V
Max. Input Level
Pin
37
dBm
Operating ambient
Topr
-30 to +90
°C
Tstg
-40 to +120
°C
1
2
3
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
0 to 0.1
temperature
Storage temperature
0.2±0.1
Unit
5˚
Rating
0.9+0.2
–0.1
Symbol
0.9±0.1
Parameters
4
1.25±0.10
2.1±0.1
6
0.12+0.05
–0.02
S Mini6-pin
■ Electrical Characterristics (Ta=25°C±3°C,Vcont(L)=0V,Vcont(H)=3.0V,f=1920MHz to 2170MHz)
Parameters
Symbol
Condition
min
typ
max
Unit
Insertion Loss
IL
IN-OUT1,Pin=-26dBm
−
0.25
−
dB
IN-OUT2,Pin=-26dBm
−
0.25
−
dB
IN-OUT1(IN-OUT2 ON)
−
23
−
dB
IN-OUT2(IN-OUT1 ON)
−
23
−
dB
IN-OUT1
−
1.10
−
dB
IN-OUT2
−
1.10
−
dB
Isolation
ISO
Voltage Standing Wave
VSWR
Ratio
Input 0.1dB Compression
Pin(0.1dB)
Vcorl(H)=3V
−
31
−
dBm
Input 1dB Compression
Pin(1.0dB)
Vcorl(H)=3V
−
33
−
dBm
Control Current
Ictrl
−
10
30
µA
Switching Time
tsw
−
−
−
µs
*1
*1)Designeg Specification
■ Test Circuit
■ Pin Descriptions
100pF
OUT2
100pF
OUT1
6
5
4
1
2
3
IN
1000pF
100pF
Vctrl 2
1000pF
Vctrl 1
Pin No.
1
2
3
4
5
6
Function
Vctrl 1
IN
Vctrl 2
OUT 2
GND
OUT 1