PD- 91888
IRL5602S
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
P-Channel
Fast Switching
Fully Avalanche Rated
D
VDSS = -20V
RDS(on) = 0.042W
G
ID = -24A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
D 2 Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-24
-17
-96
75
0.5
± 8.0
290
-12
7.5
-0.81
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RqJC
RqJA
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Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
–––
–––
2.0
40
°C/W
1
5/11/99
IRL5602S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
DV(BR)DSS/DTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-20
–––
–––
–––
–––
-0.7
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.013 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.042
VGS = -4.5V, ID = -12A
––– 0.062
W
VGS = -2.7V, ID = -10A
––– 0.075
VGS = -2.5V, ID = -10A
––– -1.0
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -15V, ID = -12A
––– -25
VDS = -20V, VGS = 0V
µA
––– -250
VDS = -16V, VGS = 0V, TJ = 150°C
––– 500
VGS = -8.0V
nA
––– -500
VGS = 8.0V
––– 44
ID = -12A
––– 8.7
nC
VDS = -16V
––– 19
VGS = -4.5V, See Fig. 6 and 13
9.7 –––
VDD = -10 V
73 –––
ID = -12A
ns
53 –––
RG = 6.0W, VGS = 4.5V
84 –––
RD = 0.8W, See Fig. 10
Between lead,
7.5
–––
nH
and center of die contact
1460 –––
VGS = 0V
790 –––
pF
VDS = -15V
370 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -24
showing the
A
G
integral reverse
-96
––– –––
p-n junction diode.
S
––– ––– -1.4
V
TJ = 25°C, IS = -12A, VGS = 0V
––– 58
88
ns
TJ = 25°C, IF = -12A
––– 54
81
nC
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.0mH
RG = 25W, IAS = -14A. (See Figure 12)
ISD £ -12A, di/dt £ 120A/µs, VDD £ V(BR)DSS,
TJ £ 175°C
Pulse width £ 300µs; duty cycle £ 2%.
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRL5602S
100
100
VGS
-15V
-12V
-10V
-7.0V
-5.0V
-4.5V
-2.7V
BOTTOM -2.0V
10
-2.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
-2.0V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
3.5
TJ = 25 ° C
TJ = 175 ° C
10
V DS = -15V
20µs PULSE WIDTH
4.0
5.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
3.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
2.0
VGS
-15V
-12V
-10V
-7.0V
-5.0V
-4.5V
-2.7V
BOTTOM -2.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
6.0
ID = -24A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = -4.5V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL5602S
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2400
2000
Ciss
1600
Coss
1200
800
Crss
400
0
1
10
15
-VGS , Gate-to-Source Voltage (V)
2800
ID = -12A
VDS =-16V
VDS =-10V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
-VDS , Drain-to-Source Voltage (V)
30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
TJ = 175 ° C
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
1.6
100us
1ms
10
10ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL5602S
25
RD
VDS
VGS
-ID , Drain Current (A)
20
D.U.T.
RG
+
VDD
15
-4.5V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
10
5
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
150
10%
175
TC , Case Temperature ( ° C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL5602S
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
1000
L
VDS
ID
-5.9A
-10A
BOTTOM -14A
TOP
800
600
400
200
0
25
I AS
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.3µF
-4.5V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL5602S
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
+
-
-
+
RG
· dv/dt controlled by RG
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
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7
IRL5602S
TO-263AB Package Details
10.54 (.415)
10.29 (.405)
1.40 (.055)
MAX.
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
-A-
6.47 (.255)
6.18 (.243)
15.49 (.610)
14.73 (.580)
3
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 (.200)
0.25 (.010)
M
8.89 (.350)
REF.
1.39 (.055)
1.14 (.045)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
TRR
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
27.40 (1.079)
23.90 (.941)
ASSEMBLY
LOT CODE
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
(This is an IRF530S with assembly lot
code 9B1M )
INTERNATIONAL
RECTIFIER
LOGO
Tape & Reel
13.50 (.532)
12.80 (.504)
Part Marking
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
2.54 (.100)
2X
2.08 (.082)
2X
1.60 (.063)
1.50 (.059)
A
PART NUMBER
F530S
9246
9B
1M
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
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http://www.irf.com/
Data and specifications subject to change without notice. 5/99
8
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