Data Sheet No. PD 60069-H IRSF3031 (NOTE: For new designs, we recommend IR’s new products IPS021 and IPS021L) FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • • • • • Product Summary Controlled slew rate reduces EMI Over temperature protection Over current protection Active drain-to-source clamp ESD protection Lead compatible with standard Power MOSFET Low operating input current Monolithic construction Dual set/reset threshold input V ds(clamp) Description The IRSF3031 is a three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, ESD and over-voltage protections and dual set/reset input threshold . The on-chip protection circuit latches off the Power MOSFET in case the drain current exceeds 4A (typical) or the junction temperature exceeds 165oC (typical) and keeps it off until the input is driven below the Reset Threshold voltage. 50 V Rds(on) 200 mΩ Ids(sd) 4A Tj(sd) 165oC E AS 200 mJ Applications • Solenoid Driver • DC Motor Driver • Programmable Logic Controller Packages The drain to source voltage is actively clamped at 55V prior to the avalanche of the Power MOSFET, thus improving its performance during turn-off with inductive loads. 3 Lead SOT-223 The input requirements are very low (100µA typical) which makes the IRSF3031 compatible with most existing designs based on standard power MOSFETs. 3 Lead TO220AB Block Diagram Drain DRAIN Bias & Ref Input INPUT + 3.5V + 1V - S Q R Q + Vref + Tj Ground Isolation Source SOURCE www.irf.com 1 IRSF3031 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25oC unless otherwise specified.) Symbol Parameter Vds, max Continuous drain to source voltage Min. Max. — 50 Units Test Conditions V Vin, max Continuous input voltage -0.3 10 Ids Pd Continuous drain current — self limited A Power dissipation — 30 W Tc — 3.0 W Tc EAS Unclamped single pulse inductive energy➁ — 200 mJ Vesd1 Electrostatic discharge voltage (Human Body Model) — 4000 V Vesd2 Electrostatic discharge voltage (Machine Model) — 1000 T Jop Operating junction temperature range -55 150 T Stg Storage temperature range -55 150 TL Lead temperature (soldering, 10 seconds) — 300 ≤ ≤ 25oC, TO220 25oC, SOT223 100pF. 1.5kΩ 200pF, 0Ω o C Static Electrical Characteristics (Tc = 25oC unless otherwise specified.) Symbol Parameter V ds,clamp R ds(on) I dss V set V reset I i,on I i,off V in, clamp V sd Drain to source clamp voltage Drain to source on resistance Drain to source leakage current Input threshold voltage Input protection reset threshold voltage Input supply current (normal operation) Input supply current (protection mode) Input clamp voltage Body-drain diode forward drop➂ Min. Typ. 50 — — 2.5 0.5 — — 9 — 56 155 — 3.2 1.0 100 120 10 1.5 Min. Typ. — — — — — — — — Max. Units Test Conditions 65 200 250 4.0 1.5 300 400 — — V mΩ µA V V µA µA V V Ids = 2A Vin = 5V, Ids = 2A Vds = 40V, Vin = 0V Vds = 5V, Ids > 10mA Vds = 5V, Ids < 10µA Vin = 5V Vin = 5V Iin = 1mA Ids = -2A, R in = 1kΩ Thermal Characteristics Symbol Parameter R thjc R thja R thjc R thja Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Thermal resistance, junction-to-case Thermal resistance, junction-to-PCB ➀ Max. Units Test Conditions 4 60 40 60 o o C/W TO-220AB C/W SOT-223 NOTES: ① When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer to International Rectifier Application Note AN-994. ② EAS is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25oC. ③ Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode is forward biased. 2 www.irf.com IRSF3031 Switching ElectricalCharacteristics (VCC = 14V, resistive load (RL) = 10Ω, Rin= 100Ω. Specifications measured at TC= 25oC unless otherwise specified.) Symbol Parameter t don tr t doff tr SR SR Turn-on delay time Rise time Turn-off delay time Fall time Output positive slew rate Output negative slew rate Min. Typ. — — — — -6 -6 — — — — — — Min. Typ. 1.8 155 — — — — — 4 165 3 TBD TBD TBD TBD Max. Units Test Conditions 30 30 30 30 6 6 µs V/µs Vin = 2V to 5V, 50% to 90% Vin = 2V to 5V, 90% to 10% Vin = 5V to 2V, 50% to 10% Vin = 5V to 2V, 10% to 90% Vin = 2V to 5V, +dVds/dt Vin = 5V to 2V, -dVds/dt Protection Characteristics (TC= 25oC unless otherwise specified. Symbol Parameter I ds(sd) T j(sd) V protect t Iresp I peak t reset t Tresp Current limit Over temperature shutdown threshold Min. input voltage for over-temp function Over current response time Peak short circuit current Protection reset time Over-temperature response time Max. Units Test Conditions 6 — — — — — — A C V µs A o Vin = 5V Vin = 5V, Ids = 2A µs Lead Assignments 2 (D) (2) D 1 In 2 D 3 S 1 2 3 In D S 3 Lead - SOT223 3 Lead - TO220 IRSF3031L IRSF3031 Part Number www.irf.com 3 IRSF3031 Case Outline - SOT-223 (TO-261AA) 01-0022 05 4 www.irf.com IRSF3031 Tape & Reel - SOT223 01-0028 05 / 01-0008 02 Case Outline 3 Lead - TO220 NOTES: 2X IRGB 01-3026 01 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon, Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 4/11/2000 www.irf.com 5