Infrared Light Emitting Diodes LNA2904L (LN166) GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 Not soldered Features High-power output, high-efficiency : Ie = 10 mW/sr (min.) 1.0 For optical control systems Good radiant power output linearity with respect to input current High center radiant intensity 13.5±1.0 11.5±1.0 3.9±0.3 1.0 Emitted light spectrum suited for silicon photodetectors 2-1.0±0.15 2-0.6±0.15 Transparent epoxy resin package Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit PD 160 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 1.5 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 0.6±0.15 ø6.0±0.2 2.54 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Center radiant intensity Symbol Conditions min typ max 10 Unit Ie IF = 50mA mW/sr Peak emission wavelength λP IF = 50mA 950 nm Spectral half band width ∆λ IF = 50mA 50 nm Forward voltage (DC) VF IF = 100mA 1.35 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz 50 pF Half-power angle θ The angle in which radiant intencity is 50% 20 deg. 1.6 V 10 µA Note) The part number in the parenthesis shows conventional part number. 1 LNA2904L Infrared Light Emitting Diodes IF — Ta IFP — Duty cycle 120 tw = 10µs Ta = 25˚C Pulse forward current 40 20 0 – 25 0 20 40 60 80 10 –1 10 –2 10 –3 10 –2 100 IFP (A) 1 10 –1 Ambient temperature Ta (˚C ) (2) 10 2 10 3 50mA 10mA 0.8 0.4 Pulse forward current IFP (mA) λP — Ta 1000 0 40 80 120 1 10 –1 – 40 0 40 Spectral characteristics Directivity characteristics 0˚ IF = 50mA Ta = 25˚C Relative radiant intensity (%) 920 80 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 90 940 120 Ambient temperature Ta (˚C ) 100 960 80 Ambient temperature Ta (˚C ) IF = 50mA Peak emission wavelength λP (nm) ∆Ie — Ta 1.2 0 – 40 10 4 980 5 10 10 –1 10 4 IF = 100mA VF (V) 10 3 IF = 50mA Forward voltage Relative radiant intensity ∆Ie (1) 1 2 VF — Ta 10 2 10 –2 1 0 Forward voltage VF (V) 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 10 –1 10 –2 10 2 10 1 Duty cycle (%) ∆Ie — IFP 10 3 1 tw = 10µs f = 100Hz Ta = 25˚C Relative radiant intensity (%) 60 10 Relative radiant intensity ∆Ie Allowable forward current 80 Pulse forward current IFP (A) IF (mA) 10 2 100 IFP — VF 10 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 900 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 860 900 940 980 1020 1060 1100 Wavelength λ (nm) Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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