Reflective Photosensors (Photo Reflectors) CNZ2253 (ON2253) Reflective Photosensor Mark for indicating LED side 7.5±0.2 (3.2) 4.0±0.2 CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si Darlington phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. 10.2 min. 6.0±0.2 1.7±0.2 Small size and light weight Applications Optical mark reading Detection of position and edge Detection of coin and bill 2 1 Absolute Maximum Ratings (Ta = 25˚C) Symbol Ratings 3 V IF 50 mA PD*1 75 mW Collector to emitter voltage VCEO 20 V Output (Photo Emitter to collector voltage transistor) Collector current VECO 5 V IC 30 mA Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 4 (Note) 1 2 3 4 1. ( ) Dimension is reference Pin connection 2. * is dimension at the root of leads Unit VR Temperature 3 ø0.45±0.05 ø0.3±0.05 *2-0.9±0.15 ; ;; Start, end mark detection of magnetic tape Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation ø2.2±0.2 (7.2) Detection of paper, film and cloth Parameter 0.5 10.6±0.3 9.6±0.3 Features High sensitivity Unit : mm 3.0±0.2 Overview *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals VF IF = 50mA IR VR = 3V Ct VR = 0V, f = 1MHz Output characteristics Collector cutoff current ICEO C typ max 1.2 1.5 V 10 µA classifications *2 Class Q R S IC (mA) 3 to 9 6 to 18 12 to 30 0.5 µA 30 mA pF Time required for the collector current to increase *4 from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value. tr 3 µs 150 1.5 V Transfer characteristics measurement circuit (Ambient light is shut off completely) IC VCC ;;;; ;;;;; ;; ;;; ; IF *3 Unit 50 VCE = 10V Collector current IC*1*2 VCC = 5V, IF = 10mA, RL = 100Ω Transfer tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100Ω characteristics Response time Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 1mA *1 I min d = 3 mm RL 90% 10% tf Standard white paper (Reflective ratio 90%) Note) The part number in the parenthesis shows conventional part number. 1 CNZ2253 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — V F Ta = 25˚C IF IC 30 20 40 Forward voltage 40 VF (V) 50 IF (mA) 50 30 20 60 80 0 100 0 1.6 2.0 0 – 40 – 20 2.4 0 10 1 10 2 60 80 100 IC — Ta 10 2 IF = 20mA 10 10mA 1 1 120 80 40 0 – 40 – 20 10 2 10 VCC = 5V IF = 10mA RL = 100Ω Collector to emitter voltage VCE (V) 0 tr — IC 40 60 80 100 IC — d 10 4 16 VCC = 10V Ta = 25˚C VCE = 10V 10 2 10 3 RL = 1kΩ tr (µs) Rise time 20 Ambient temperature Ta (˚C ) 500Ω 100Ω 10 2 10 VCC = 5V Ta = 25˚C RL = 100Ω IF = 1.5mA 12 ; ; ICEO — Ta 1 40 160 10 –1 10 –1 10 3 10 20 Ambient temperature Ta (˚C ) IC (%) IC (mA) 10 2 Collector current IC (mA) 1.2 Ta = 25˚C 10 3 ICEO (µA) 0.4 IC — VCE VCC = 5V Ta = 25˚C RL = 100Ω 10 0.8 10 3 Forward current IF (mA) Dark current 10mA 0.8 Forward voltage VF (V) IC — I F 10 3 1 0.4 Relative output current 40 IC (mA) 20 Collector current 0 Ambient temperature Ta (˚C ) 10 –1 IF = 50mA 1.2 10 10 0 – 25 Collector current VF — Ta 1.6 60 Forward current Forward current, collector current IF , IC (mA) 60 d 8 4 10 –1 10 –2 – 40 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 1 10 –2 10 –1 1 Collector current IC (mA) 10 0 0 2 4 6 Distance d (mm) 8 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR