Transmissive Photosensors (Photo Interrupters) CNZ1179 (ON1179) Photo Interrupter Unit : mm For contactless SW, object detection Overview Highly precise position detection : 0.3 mm Wide gap between emitting and detecting elements, suitable for thick plate detection 2 Fast response : tr, tf = 6 µs (typ.) 1 0.45±0.1 2.2±0.2 2-R0.5 ;;;; ; 7.0 min. 10.0±0.3 2.0±0.2 Features 6.2±0.2 7.2±0.2 Mark for indicating LED side 13.0±0.3 5.0±0.2 CNZ1179 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 2-0.45 *9.75±0.3 *2.54±0.3 3 2 3 4 1 4 Pin connection Small output current variation against change in temperature (Note) * is dimension at the root of leads Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Unit VR 3 V IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 30 V 5 V Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Collector current Temperature *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Conditions typ max Unit 1.2 1.5 V VR = 3V 10 µA VCE = 10V 200 nA Forward voltage (DC) VF IF = 50mA IR Collector cutoff current Output characteristics Collector to emitter capacitance ICEO CC VCE = 10V, f = 1MHz Collector current IC VCE = 10V, IF = 20mA, RL = 100Ω Input characteristics Reverse current (DC) Transfer Response time tr , tf* VCC = 10V, IC = 1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA * min 5 pF 0.3 mA µs 6 0.3 V Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 CNZ1179 Transmissive Photosensors (Photo Interrupters) IF , IC — Ta IF — V F IC — I F 60 10 Ta = 25˚C IF 30 IC IC (mA) 30 20 1 10 –1 10 –2 10 10 0 – 25 40 Collector current 40 20 VCE = 10V Ta = 25˚C 50 IF (mA) 50 Forward current Forward current, collector current IF , IC (mA) 60 0 20 40 60 80 0 100 0 Ambient temperature Ta (˚C ) 0.4 0.8 1.2 1.6 2.0 10 –3 10 –1 2.4 Forward voltage VF (V) VF — Ta 1 IC — VCE IC — Ta 10 2 1.6 160 VCE = 10V IF = 20mA 1mA 0.8 0.4 20 40 60 80 IC (%) 20mA 10mA 10 –1 10 –2 10 –1 100 Ambient temperature Ta (˚C ) 1 Collector to emitter voltage VCE (V) ICEO — Ta tr (µs) RL = 1kΩ 500Ω Rise time ICEO (µA) Dark current 10V 10 –2 10 1 Sig.IN VCC V1 50Ω Sig. V1 OUT V2 V2 RL 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 tr ; ;; 10 –3 10 –1 10 –2 10 –1 40 60 80 100 100 VCC = 10V Ta = 25˚C 10 2 10 –4 – 40 – 20 20 IC — d 1 VCE = 24V 0 Ambient temperature Ta (˚C ) tr — IC 10 3 10 10 –1 40 0 – 40 – 20 10 2 10 80 td 90% 10% VCE = 10V Ta = 25˚C IF = 20mA IC (%) 0 IF = 30mA 1 120 80 Relative output current 0 – 40 – 20 10 Relative output current 10mA IC (mA) IF = 50mA Collector current Forward voltage VF (V) Ta = 25˚C 1.2 10 2 10 Forward current IF (mA) 60 Criterion 0 d 40 20 tf 1 Collector current IC (mA) 10 0 0 1 2 3 4 Distance d (mm) 5 6 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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