PIN Photodiodes PNA3W01L (PN307) PIN Photodiode Unit : mm For optical control systems 0.5±0.1 Features High sensitivity, high reliability Type number : Emitter mark (Yellow) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2.8±0.2 0.15 R0.9 Symbol Ratings Unit Reverse voltage (DC) Parameter VR 30 V Power dissipation PD 10 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 0.85 ± 0.15 Absolute Maximum Ratings (Ta = 25˚C) 0.4±0.1 45 2.8±0.2 1.8 1.05±0.1 Double end type small size package 1.8 2.2±0.15 (0.7) 2 ˚ Peak sensitivity wavelength matched with infrared light emitting diodes : λp = 800 nm (typ.) (0.7) 1 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min typ max 50 Unit Dark current ID VR = 10V Photo current IL VR = 10V, L = 1000 lx* nA Peak sensitivity wavelength λP VR = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 24 deg. µA 5 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Note) The part number in the parenthesis shows conventional part number. 1 PIN Photodiodes PNA3W01L PD — Ta 6 4 ID (nA) 10 2 10 Dark current IL (µA) 8 Photo current PD (mW) 12 10 10 3 VR = 10V Ta = 25˚C T = 2856K 10 3 Power dissipation ID — Ta IL — L 14 1 VR = 10V 10 2 10 1 10 –1 2 0 – 20 0 20 40 60 80 10 –2 100 1 Ambient temperature Ta (˚C ) 80 40 40 60 80 S (%) 60 40 400 1000 1200 Rise time, Fall time 0 8 16 24 Reverse voltage VR (V) 32 80 60 40 50Ω Sig. OUT RL tr td 90% 10% tf 1 10 –1 10 –2 10 –1 1 10 0 80 40 0 40 Angle θ (deg.) VR=10V ;; tr , tf (µs) Sig.IN 1 10 –1 800 10 2 ID (nA) Dark current 600 tr , tf — RL ID — VR 10 80 20 Wavelength λ (nm) Ta = 25˚C 60 Ta = 25˚C 80 Ambient temperature Ta (˚C ) 10 40 100 Directional characteristics VCE = 10V Ta = 25˚C 0 200 100 20 100 20 20 0 Ambient temperature Ta (˚C ) Relative sensitivity S (%) Relative sensitivity IL (%) Relative photo current 120 0 10 –1 – 40 – 20 10 4 Spectral sensitivity characteristics 100 VR = 10V L = 1000 lx T = 2856K 0 – 40 – 20 2 10 3 Illuminance L (lx) IL — Ta 160 10 2 10 10 2 External load resistance RL (kΩ) 80 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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