HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER PA45DIE M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739 NO LONGER SUPPORTED FOR DESIGN-IN SUPPLY VOLTAGE, +VS to –VS OUTPUT CURRENT, continuous INPUT VOLTAGE, differential INPUT VOLTAGE, common mode TEMPERATURE, junction ABSOLUTE MAXIMUM RATINGS 150V 5A ±16V ±VS 150°C NOTE: Because of wafer probing test limitations, full power tests are not possible. Refer to parent product data sheet PA45 for typical AC, DC and power performance specifications. DC WAFER PROBED SPECIFICATIONS PARAMETER1 TEST CONDITIONS OFFSET VOLTAGE, initial OFFSET VOLTAGE, vs. supply BIAS CURRENT, initial OFFSET CURRENT, initial SUPPLY CURRENT, quiescent COMMON MODE REJECTION VOLTAGE SWING, positive VOLTAGE SWING, negative ALARM, sink current ALARM, leakage VS = ±20V to ±75 V VS = ±20V VS = ±20V VS = ±20V VS = ±20V VCM = ±45V, VS = ±75V VS = ±50V, IO = 40mA VS = ±50V, IO = –40mA VS = ±20V to ±75 V VS = ±20V to ±75 V NOTES: MIN MAX UNITS 25 25 1 1 26 mV µV/V nA nA mA dB V V µA µA 84 40 –40 90 1 D 1. Current limit, IQ pin, and shutdown verified as operational. DIE LAYOUT 1 2 25 24 23 3 4 5 6 220 Mil 5588µ 11 22 21 12 7 20 13 8 19 14 9 15 10 16 18 17 220 Mil 5588µ Thickness: 11 Mil (280µ) Backside: Silicon (no back metal) Small Bond pads: 5 Mil sq (127µ) AI Large Bond pads: 5 x 11 Mil (127µ x 280µ) AI NOTE: Tie backside to –VS through die attach medium. Recommended die attach material is either conductive epoxy or silver-glass. Lowest thermal resistance will be obtained with silver-glass. Recommended wire is 2 mil aluminum. All large bond pads must be used to avoid excessive current density in the die metalization. Pad Function Pad Function 1 2 3* 4* 5 6-10 – Input + Input Alarm Shutdown NC –VS 11-16 17-21 22* 23 24 25 Output Drive +VS IQ Compensation Compensation Current Limit Sense * Pad 3 (Alarm) is tied to a switched current source. When an over-temperature condition exits the current source turns on and sinks 90µA to –VS. Pad 4 (Shutdown) will shut off the output stage when at least 90µA is pulled from pad 4 to any voltage at least 3 volts less positive than +VS (ground, for example). When pad 3 is tied to pad 4 an over-temperature condition will shut off the output stage until power is cycled and the fault is removed. Normally pad 22 (IQ) is left open. When pad 22 is tied to pad 23 the quiescent current in the output stage is disabled. The result is lower quiescent but class C biasing of the output stage. CAUTION PA45DIE is a MOSFET amplifier. ESD handling procedures must be observed. This data sheet has been carefully CORPORATION checked and is believed to be reliable,(520) however, no responsibility assumed888-3329 for possible •inaccuracies or omissions. All specifications subject to change without notice. APEX MICROTECHNOLOGY • TELEPHONE 690-8600 • FAXis(520) ORDERS (520) 690-8601 • EMAILare [email protected] PA45DIEU REV. A FEBRUARY 1998 © 1998 Apex Microtechnology Corp. 219