'9 9 n ew ! HMC132 MICROWAVE CORPORATION GaAS MMIC HIGH-ISOLATION SPDT SWITCH DC - 15 GHZ FEBRUARY 2001 Features General Description BANDWIDTH: DC-15 GHz The HMC132 chip is a fast, broadband SPDT HIGH ISOLATION : > 50 dB switch featuring high (> 50 dB) isolation over NON-REFLECTIVE DESIGN the entire band, provided by on-chip ground vias. The switch is non-reflective at both RF1 and RF2 ports. Negative control voltage of 0 / -5 Vdc to 0 / -7 Vdc control the channel selection. Redundant A/B control lines lend versatility to MIC layouts. DIE SPDT SWITCHES 7 Guaranteed Performance With 0/-5V Control, 50 Ohm System, -55 to +85 deg C Parameter Frequency Min. Typ. Max. Units 1.9 4.0 2.4 4.5 dB dB Inser tion Loss DC - 6 GHz DC - 15 GHz Isolation DC - 6 GHz DC - 15 GHz 45 40 55 50 dB dB Return Loss DC - 6 GHz DC - 15 GHz 14 9.5 17 11 dB dB Input Power for 0.1 dB Compression 0.5 - 15 GHz +20 +25 dB m Input Power for 1 dB Compression 0.5 - 15 GHz +22 +28 dB m Input Third Order Intercept 0.5 - 15 GHz +38 +42 dB m Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 15 GHz 3 6 ns ns 12 Elizabeth Drive, Chelmsford, MA 01824 7-2 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 9 ne w ! HMC132 MICROWAVE CORPORATION HMC132 HIGH-ISOLATION SPDT SWITCH DC - 15 GHZ FEBRUARY 2001 Isolation Insertion Loss 0 0 -10 -20 ISOLATION (dB) INSERTION LOSS (dB) -1 -2 -3 -4 -30 -40 -50 -60 -70 -5 0 2 4 6 8 10 12 FREQUENCY (GHz) 14 16 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) 7 SPDT SWITCHES Return Loss RETURN LOSS (dB) 0 -10 -20 -30 12 Elizabeth Drive, Chelmsford, MA 01824 2 4 6 8 10 12 FREQUENCY (GHz) Phone: 978-250-3343 14 16 Fax: 978-250-3373 DIE 0 Web Site: www.hittite.com 7-3 '9 9 n ew ! HMC132 MICROWAVE CORPORATION HMC132 HIGH-ISOLATION SPDT SWITCH DC - 15 GHZ FEBRUARY 2001 Truth Table Schematic RF COM A A B Control Input B 1FR 2FR A B A Signal Path State A B RF to RF1 RF to RF2 H i gh Low ON OFF Low H i gh OFF ON )DNG SI E KCAB ( Control Voltages Absolute Maximum Ratings Control Voltage Range Storage Temperature Operating Temperature Bias Condition Low 0 to -0.2V @ 20uA Max. H i gh -5V@200uA Typ to -7V@600uA Max Suggested Driver Circuit Outline V 5 z .= 1 I z5t0=u A PCOM ENSATD DEVIC S 4 D 6C 8 9 SPDT SWITCHES 7 +0.5 to -7.5 Vdc -65 to +150 deg C -55 to +125 deg C State A G a A sI T S C W H LORTN C VC LT DNG OR SOMC VC B GDN 10K 07T4CH(L) )S O M C ( 40 H 7 5 - VC D DIE Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. DIE THICKNESS IS 0.004, BACKSIDE IS GROUND BOND PADS ARE 0.004, SQUARE ALL DIMENSION IN INCHES ±0.001 BOND PAD METALLIZATION: GOLD BACKSIDE METALLIZATION: GOLD 12 Elizabeth Drive, Chelmsford, MA 01824 7-4 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 9 ne w ! HMC132 MICROWAVE CORPORATION HMC132 HIGH-ISOLATION SPDT SWITCH DC - 15 GHZ FEBRUARY 2001 Handling Precautions Follow these precautions to avoid permanent damage: Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ±250V ESD strikes ( see page 8 - 2 ). Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as possible. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7-5 SPDT SWITCHES Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. 7 DIE Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.