GaAs MMIC 2 to 6 GHz Frequency Doubler HMC157 MICROWAVE CORPORATION GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT V01.0700 FEBRUARY 2001 Features General Description CONVERSION LOSS: 17 dB The HMC157 is a miniature frequency doubler in a MMIC die. Suppression of undesired fundamental and higher order harmonics is 35 to 60 dB with respect to input signal level and 18 to 43 dB with respect to the desired output signal level. The doubler uses the same diode/balun technology used in Hittite MMIC mixers, features small size and requires no DC bias. Fo, 3Fo, 4Fo ISOLATION: > 35 dB INPUT DRIVE LEVEL :10 to 20 dBm DIE MULTIPLIERS 3 Guaranteed Performance, 50 Ohm system -55 to +85 deg C Typical Performance vs. Drive Level 10 15 20 dBm Input Frequency Range 1.5 - 2.0 1.0 - 2.0 1.0 - 2.0 GHz Output Frequency Range 3.0 - 4.0 2.0 - 4.0 2.0 - 4.0 GHz <18 <16 <17 dB Conversion Loss Performance for Input Signals in the 1.0 - 2.0 GHz Band (+15dBm Drive) Min. Typ. Fo Isolation (with respect to input level) 35 50 dB 3Fo Isolation (with respect to input level) 40 50 dB 4Fo Isolation (with respect to input level) 30 35 dB 12 Elizabeth Drive, Chelmsford, MA 01824 3 - 10 Phone: 978-250-3343 Fax: 978-250-3373 Max. Web Site: www.hittite.com HMC157 MICROWAVE CORPORATION GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT V01.0700 FEBRUARY 2001 Isolation @ +15 dBm Drive Level * Conversion Loss vs. Drive Level 0 0 Fo 3Fo 4Fo -20 -10 -30 ISOLATION (dB) -20 -30 -40 -60 -70 Input=+10dBm Input=+15dBm Input=+20dBm -40 3 -50 -80 -90 -100 -50 2 2.5 3 3.5 4 4.5 1 5 2 3 4 5 6 7 8 9 10 FREQUENCY (GHz) OUTPUT FREQUENCY (GHz) MULTIPLIERS CONVERSION GAIN (dB) -10 Input Return Loss vs. Drive level DIE * With respect to input level Output Return Loss vs. Drive Level 0 0 -5 OUTPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) -2 -10 -15 Input=+10dBm Input=+15dBm Input=+20dBm -20 -25 -4 -6 -8 -10 -12 -14 Input=+10dBm Input=+15dBm Input=+20dBm -16 -18 -20 -30 1 2 3 4 5 6 7 2 3 4 5 6 7 OUTPUT FREQUENCY (GHz) FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 1 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 3 - 11 HMC157 MICROWAVE CORPORATION GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT FEBRUARY 2001 V01.0700 Absolute Maximum Ratings Schematic Input Drive +27 dBm Storage Temperature -65 to +150 deg C Operating Temperature -55 to +125 deg C MULTIPLIERS 3 Outline Drawing 1.168 DIE (0.046) 1.041 (0.041) 0.127 (0.005) Hittite 4415 RF IN RFin RF OUT RFout 1.168 (0.046) 0.584 0.584 (0.023) (0.023) THREE PADS ON EACH CORNER MUST BE BONDED TO GROUND (12 TOTAL). ALL DIMENSIONS IN MILLIMETERS (INCHES) ALL TOLERANCES ARE ±0.025 (0.001) DIE THICKNESS IS 0.254 (0.010) BOND PADS ARE 0.100 (0.004) SQUARE EQUALLY SPACED AT 0.150 (0.006) CENTERS BACKSIDE METALLIZATION: NONE BOND PAD METALLIZATION: GOLD 12 Elizabeth Drive, Chelmsford, MA 01824 3 - 12 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com HMC157 MICROWAVE CORPORATION GaAs MMIC FREQUENCY DOUBLER 1 - 2 GHz INPUT FEBRUARY 2001 V01.0700 Handling Precautions The chip is not back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package. RF bonds should be as short as possible. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 3 - 13 MULTIPLIERS Mounting 3 DIE Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ). Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.