IRF IRF5850

PD - 93947
IRF5850
HEXFET® Power MOSFET
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Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
VDSS = -20V
RDS(on) = 0.135Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where
printed circuit board space is at a premium and where
maximum functionality is required. With two die per
package, the IRF5850 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal
design and RDS(on) reduction enables an increase in
current-handling capability.
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-2.2
-1.8
-9.0
0.96
0.62
7.7
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
130
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
7/25/00
IRF5850
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
–––
–––
–––
–––
–––
–––
–––
–––
3.6
0.66
0.83
8.3
14
31
28
320
56
40
Max. Units
Conditions
–––
V
V GS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.135
VGS = -4.5V, ID = -2.2A ‚
Ω
0.220
VGS = -2.5V, ID = -1.9A ‚
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -2.2A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
5.4
ID = -2.2A
–––
nC
VDS = -10V
–––
VGS = -4.5V ‚
–––
VDD = -10V ‚
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -4.5V
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-0.96
–––
–––
-9.0
–––
–––
–––
–––
23
7.7
-1.2
35
12
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -0.96A, VGS = 0V
TJ = 25°C, I F = -0.96A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF5850
100
100
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM -1.2V
10
1
-1.2V
0.1
1
10
10
1
-1.2V
20µs PULSE WIDTH
TJ = 25 ° C
0.01
0.1
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
1
V DS = -15V
20µs PULSE WIDTH
2.4
2.8
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
TJ = 25 ° C
2.0
1
10
100
Fig 2. Typical Output Characteristics
10
1.6
20µs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
1.2
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-2.0V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
ID = -2.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF5850
VGS =
Ciss =
Crss =
Coss =
400
10
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
500
C, Capacitance (pF)
Ciss
300
200
100
Coss
Crss
ID = -2.2A
8
6
4
2
0
0
1
10
0
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
6
8
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
1
TJ = 25 ° C
10
100us
1ms
1
10ms
0.1
0.4
TA = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS =-16V
VDS =-10V
1.4
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF5850
2.5
RD
VDS
VGS
-ID , Drain Current (A)
2.0
D.U.T.
RG
+
VDD
1.5
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TJ , Junction Temperature (°C)
90%
Fig 9. Maximum Drain Current Vs.
Junction Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.24
R DS (on) , Drain-to-Source On Resistance ( Ω)
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF5850
0.20
0.16
ID = -2.2A
0.12
0.08
2.0
3.0
4.0
5.0
6.0
7.0
0.40
0.30
VGS = -2.5V
0.20
VGS = -4.5V
0.10
0
2
-V GS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
4
6
8
10
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF5850
24
1.0
16
0.8
ID = -250µA
Power (W)
-V GS(th) , Variace ( V )
20
12
8
0.6
4
0
0.4
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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0.001
0.010
0.100
1.000
10.000
Time (sec)
Fig 15. Typical Power Vs. Time
7
IRF5850
TSOP-6 Package Outline
TSOP-6 Part Marking Information
8
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IRF5850
TSOP-6 Tape & Reel Information
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00
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