PD - 9.911A IRF9Z14S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z14S) l Low-profile through-hole (IRF9Z14L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D l VDSS = -60V RDS(on) = 0.50Ω G Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z14L) is available for lowprofile applications. ID = -6.7A S D 2 Pak T O -2 6 2 Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds -6.7 -4.7 -27 3.7 43 0.29 ± 20 140 -6.7 4.3 -4.5 -55 to + 175 Units A W W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 3.5 40 °C/W 8/25/97 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF9Z14S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Q gs Q gd t d(on) tr t d(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. -60 ––– ––– -2.0 1.4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– V(BR)DSS ∆V(BR)DSS/∆TJ I GSS Typ. ––– -0.06 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 63 10 31 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID =-1mA 0.50 Ω VGS =-10V, ID = -4.0A -4.0 V VDS = VGS, ID = -250µA ––– S VDS = -25V, I D = -4.0A -100 VDS = -60V, VGS = 0V µA -500 VDS = -48V, VGS = 0V, TJ = 150°C -100 V GS = -20V nA 100 VGS = 20V 12 ID = -6.7A 3.8 nC VDS = -48V 5.1 VGS = -10V, See Fig. 6 and 13 ––– VDD = -30V ––– I D = -6.7A ns ––– RG = 24Ω ––– RD = 4.0Ω, See Fig. 10 Between lead, nH 7.5 ––– and center of die contact 270 ––– VGS = 0V 170 ––– pF VDS = -25V 31 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -6.7 showing the A G integral reverse ––– ––– -27 p-n junction diode. S ––– ––– -5.5 V TJ = 25°C, IS = -6.7A, VGS = 0V ––– 80 160 ns TJ = 25°C, IF = -6.7A ––– 96 190 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) VDD = -25V, starting TJ = 25°C, L = 3.6mH RG = 25Ω, IAS = -6.7A. (See Figure 12) Uses IRF9Z14 data and test conditions I SD ≤ -6.7A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS , TJ ≤ 175°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF9Z14S/L TJ Powered by ICminer.com Electronic-Library Service CopyRight 2003 TJ IRF9Z14S/L Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF9Z14S/L Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF9Z14S/L Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF9Z14S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [ VDD] Forward Drop Inductor Curent Ripple ≤ 5% *** V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS Powered by ICminer.com Electronic-Library Service CopyRight 2003 [ISD ] IRF9Z14S/L D2Pak Package Outline 10.54 ( .415) 10.29 ( .405) 1.40 (.055) MAX. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) RE F . -B - 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 3 15.49 (.610) 14.73 (.580) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200) 0.55 (.022) 0.46 (.018) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M 8.89 (.350) RE F. 1.39 (.055) 1.14 (.045) B A M MINIMUM RECO MM ENDED F OO TP RINT 11.43 (.450) NO TE S: 1 DIM ENS IO NS AF T ER S OLDE R DIP . 2 DIM ENS IO NING & TO LERA NCING PE R ANS I Y 14.5M, 1982. 3 CO NT RO LLING DIME NSIO N : INCH. 4 HE AT SINK & LEAD DIMEN SION S DO NO T INCLUDE BURRS. LE AD ASS IG NM ENT S 1 - G AT E 2 - DRA IN 3 - S OU RC E 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X Part Marking Information D2Pak IN TER NATION AL REC TIFIER L OGO A PART NU MBER F53 0S 9246 9B 1M AS SEMBLY LOT CODE Powered by ICminer.com Electronic-Library Service CopyRight 2003 DATE CODE (YYW W ) YY = YEAR W W = W EE K 2.54 (.100) 2X IRF9Z14S/L Package Outline TO-262 Outline Part Marking Information TO-262 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IRF9Z14S/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 3) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9) 11 .6 0 (. 45 7 ) 11 .4 0 (. 44 9 ) 0 .3 68 (.0 14 5 ) 0 .3 42 (.0 13 5 ) 15 .4 2 (.60 9 ) 15 .2 2 (.60 1 ) 2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1) TR L 1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) FE E D D IR E C TIO N 1 3.5 0 (. 532 ) 1 2.8 0 (. 504 ) 2 7.4 0 (1 .079 ) 2 3.9 0 (.9 41) 4 33 0.0 0 (14. 17 3) M AX . N O T ES : 1. C O M F O R M S T O EIA -418 . 2. C O N T R O LLIN G D IM EN SIO N : M ILLIM E T ER . 3. D IM E N S IO N M EA S U R E D @ H U B . 4. IN C LU D E S F L AN G E D IS T O R T IO N @ O U T E R ED G E. 6 0.0 0 (2 .36 2) M IN . 26 .40 (1. 03 9) 24 .40 (.9 61 ) 3 3 0.4 0 (1 .19 7) MA X . 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 Powered by ICminer.com Electronic-Library Service CopyRight 2003