ETC IRFL014NTR

PD- 92003A
IRFL014N
HEXFET® Power MOSFET
l
l
l
l
l
l
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.16Ω
G
ID = 1.9A
S
Description
Fifth Generation HEXFET® MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Units
2.7
1.9
1.5
15
2.1
1.0
8.3
± 20
48
1.7
0.1
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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IRFL014N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
2.0
1.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.054
–––
–––
–––
–––
–––
–––
–––
7.0
1.2
3.3
6.6
7.1
12
3.3
190
72
33
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.16
Ω
VGS = 10V, ID = 1.9A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 0.85A
1.0
VDS = 44V, VGS = 0V
µA
25
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
11
ID = 1.7A
1.8
nC
VDS = 44V
5.0
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 28V
–––
ID = 1.7A
ns
–––
RG = 6.0Ω
–––
RD = 16Ω, See Fig. 10 „
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.3
–––
–––
15
–––
–––
–––
–––
41
64
1.0
61
95
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
TJ = 25°C, I F = 1.7A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 8.2mH
ƒ ISD ≤ 1.7A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 3.4A. (See Figure 12)
2
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IRFL014N
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-Source Current (A )
D
TOP
10
1
4.5 V
20 µ s P U LS E W ID TH
TC = 2 5°C
0.1
0.1
1
10
10
4 .5V
1
20 µ s P U LS E W ID TH
T J = 1 50 °C
0.1
A
0.1
100
1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R D S (on) , Drain-to-S ource O n Resistance
(N orm alized)
I D , D ra in -to-S ourc e C urrent (A)
100
10
T J = 1 5 0 °C
TJ = 25 °C
1
V DS = 25V
2 0 µ s P UL S E W ID TH
4
5
6
7
8
V G S , G ate-to -So urce Voltag e (V)
Fig 3. Typical Transfer Characteristics
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A
100
V DS , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ourc e V oltage (V )
0.1
10
9
A
I D = 1 .7A
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFL014N
V GS
C iss
C rs s
C o ss
C , Capacitance (pF)
300
250
C iss
200
C oss
=
=
=
=
20
0V ,
f = 1MHz
C g s + C g d , C d s S H O R TE D
C gd
C ds + C g d
V G S , G ate-to-S ource V oltage (V )
350
V D S = 44 V
V D S = 28 V
V D S = 11 V
16
12
150
C rss
100
I D = 1.7 A
50
0
10
4
FO R TE S T C IR C U IT
S E E FIG U R E 9
0
A
1
8
100
0
V D S , D rain-to-S ourc e V oltage (V )
4
6
8
A
10
Q G , T otal G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R D S (o n)
I D , D rain Current (A )
I S D , R everse Drain C urrent (A )
2
10
T J = 1 50 °C
T J = 25 °C
1
10
100µ s
1m s
1
10m s
V G S = 0V
0.1
0.4
0.6
0.8
1.0
1.2
V S D , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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A
1.4
T A = 25 °C
T J = 15 0°C
S ing le P u lse
0.1
1
A
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRFL014N
10V
RD
VDS
QG
VGS
QGS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
T herm al R es pon se (Z thJ A )
1000
100
D = 0.5 0
0.20
0.10
10
0 .05
PD M
0 .02
t
0 .01
1
1
t2
N o te s :
1 . D u ty fa c to r D = t
SING L E P U LS E
(T H ER M A L R ES P O NS E)
1
/t
2
2 . P e a k T J = P D M x Z th J A + T A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
A
1000
t 1 , Re ctan gular Pulse D u ration (se c)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRFL014N
15V
D RIV E R
L
VDS
D .U .T
RG
+
V
- DD
IA S
20V
tp
A
0.0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
E A S , S ingle P ulse A valanche E nergy (m J)
120
TO P
100
B O TTO M
ID
1.5 A
2.7A
3 .4 A
80
60
40
20
0
V D D = 25 V
25
50
A
75
100
125
150
S tarting T J , J unc tion T em perature (°C )
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
6
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IRFL014N
SOT-223 Package Outline
SOT-223 Part Marking Information
E X A M P L E : T H IS IS A N IR FL 0 14
P A R T NU M B E R
IN TE RN A TIO NA L
RE CT IF IE R
LO G O
F L0 14
31 4
TOP
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W A FER
LO T CO D E
XXXXXX
D A TE CO D E (Y W W )
Y = LA S T D IG IT O F TH E Y E A R
W W = W E EK
B O TT O M
7
IRFL014N
SOT-223 Tape & Reel Information
2 .0 5 (.0 8 0 )
1 .9 5 (.0 7 7 )
TR
4 .1 0 (.1 6 1)
3 .9 0 (.1 5 4)
0 .3 5 (.0 1 3 )
0 .2 5 (.0 1 0 )
1 .8 5 (.0 7 2 )
1 .6 5 (.0 6 5 )
7 .5 5 (.2 9 7 )
7 .4 5 (.2 9 4 )
1 6 .3 0 (.6 4 1 )
1 5 .7 0 (.6 1 9 )
7 .6 0 (.2 9 9 )
7 .4 0 (.2 9 2 )
1 .6 0 (.0 6 2 )
1 .5 0 (.0 5 9 )
TYP .
F E E D D IR E C T IO N
1 2 .1 0 (.4 7 5 )
1 1 .9 0 (.4 6 9 )
2 .3 0 (.0 9 0 )
2 .1 0 (.0 8 3 )
7 .1 0 (.2 79 )
6 .9 0 (.2 72 )
NOTES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 41 .
3 . E A C H O 3 3 0 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2,50 0 D E V IC E S .
1 3 .2 0 (.5 1 9 )
1 2 .8 0 (.5 0 4 )
1 5.40 (.6 0 7 )
1 1.90 (.4 6 9 )
4
330.0 0
(13.000)
M AX.
N O T ES :
1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 .
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R ..
3 . D IM E N S IO N M E A S U R E D @ H U B .
4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
5 0.0 0 (1 .9 6 9 )
M IN .
1 4 .4 0 (.5 6 6 )
1 2 .4 0 (.4 8 8 )
3
1 8 .4 0 (.7 2 4 )
M AX .
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
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Data and specifications subject to change without notice. 1/2000
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