The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC This specification supersedes DESC drawing 89026 (see 6.3.1). This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for surface mount devices, and figure 3 for JANHC and JANKC (die) dimensions. 1.3 Maximum ratings (TA = +25(C, unless otherwise specified). Type 1/ 2N7224 2N7225 2N7226 2N7227 PT 2/ PT 2/ TC = +25(C TC = +25(C W W 150 150 150 150 4.0 4.0 4.0 4.0 VGS ID1 3/ ID2 3/ TC = +25(C TC = +100(C V dc A dc A dc r20 r20 r20 r20 34.0 27.4 14.0 12.0 21 17 9 8 VISO at 70,000 foot IDM Top 4/ and TSTG A dc A(pk) qC qC/W 34.0 27.4 14.0 12.0 136 110 56 48 -55 50 +150 0.83 0.83 0.83 0.83 IS 400 500 R JC max See footnotes on next page. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC/NA DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 1 FSC 5961 MIL-PRF-19500/592C Type 1/ IAR 2/ EAS EAR rDS(on) max 2/ 5/ VGS = 10 Vdc ID = ID2 TJ = +25(C 2N7224 2N7225 2N7227 2N7228 TJ = +150(C A mj mj 6 6 34.0 27.4 14.0 12.0 150 500 700 750 15.0 15.0 15.0 15.0 0.070 0.100 0.315 0.415 0.133 0.200 0.693 0.913 1/ Electrical chracteristics for "U" suffix devices are identical to the corresponding non-"U" suffix devices unless otherwise noted. 2/ Derate linearly 1.2 W/(C for TC > +25(C; ID = 3/ PT = T J( max ) - T C RθJX T J( max ) - T C ( RθJX) x ( R DS(on) at T J( max ) 4/ IDM = 4ID1; ID1 as calculated in footnote 3/. 5/ Pulsed (see 4.5.1). 1.4 Primary electrical characteristics at TC = +25(C (unless otherwise specified). Max IDSS1 Type Min V(BR)DSS VGS(th)1 VGS = 0 1/ VGS = 0 VDS VGS ID = 1.0 mA dc TJ = +25(C ID = 0.25 mA VDS = 80 percent of rated VDS V dc PA dc Ohms 25 25 25 25 0.070 0.100 0.315 0.415 V dc 2N7224 2N7225 2N7227 2N7228 1/ 2/ 100 200 400 500 Max rDS(on) 2/ VGS = 10 V dc ID = ID2 Min 2.0 2.0 2.0 2.0 Max 4.0 4.0 4.0 4.0 Unless otherwise specified, electrical characteristics for "U" suffix devices are identical to the corresponding non "U" devices. Pulsed (see 4.5.1). 2 MIL-PRF-19500/592C NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Glass meniscus included in dimension D and E. 4. All terminals are isolated from the case. FIGURE 1. Physical dimensions for TO-254AA. 3 MIL-PRF-19500/592C Dimension Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .5353 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate Notes 3, 4 3, 4 FIGURE 1. Physical dimensions for TO-254AA - Continued. 4 MIL-PRF-19500/592C Inches .010 .020 .032 .042 .045 .055 .130 .135 .145 mm 0.25 0.51 0.81 1.07 1.14 1.40 3.30 3.43 3.68 Inches .150 .152 .162 .410 .420 .445 .455 .620 .630 mm 3.81 3.86 4.11 10.41 10.67 11.30 11.56 15.75 16.00 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for information only. FIGURE 2. Dimensions and configuration of surface mount package outline. 5 MIL-PRF-19500/592C NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for information only. 3. Unless otherwise specified, tolerance is 0.005 inches (0.13 mm). 4. Physical characteristics of the die thickness = .0187 inch (0.47 mm). 5. Back metal: Cr - Ni - Ag. 6. Top metal: Al. 7. Back contact: Drain. FIGURE 3. Physical dimensions JANHC and JANKC. 6 MIL-PRF-19500/592C A version Dimensions - 2N7224 Dimensions - 2N7225 Dimensions - 2N7227 and 2N7228 Ltr Inches Millimeters Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max Min Max Min Max A .252 .262 6.40 6.65 .252 .262 6.40 6.65 .252 .262 6.40 6.65 B .252 .262 6.40 6.65 .252 .262 6.40 6.65 .252 .262 6.40 6.65 C .027 .037 0.69 0.94 .027 .037 0.69 0.94 .025 .035 0.64 0.89 D .066 .076 1.68 1.93 .066 .076 1.68 1.93 .043 .053 1.09 1.35 E .047 .057 1.19 1.45 .047 .057 1.19 1.45 .032 .042 0.81 1.07 F .013 .023 0.33 0.58 .013 .023 0.33 0.58 .015 .025 0.38 0.64 FIGURE 3. JANHC and JANKC die dimensions - Continued. 7 MIL-PRF-19500/592C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as specified herein. JANH - - - - - - - - - - - - High reliability product assurance level for unencapsulated devices. JANK - - - - - - - - - - - - Space reliability product assurance level for unencapsulated devices. 3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1, 2, and 3 herein. Methods used for electrical isolation of the terminal feed through shall employ materials that contain a minimum of 90 percent AL203 (ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. 3.3.1 Lead formation material and finish. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation material or finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of Table II of MIL-PRF-19500 and 100 percent DC testing in accordance with group A, subgroup 2 herein. 3.3.2 Internal construction. Multiple chip construction shall not be permitted to meet the requirements of this specification. 8 MIL-PRF-19500/592C 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.4.1 Marking of JANHC and JANKC die. For JANHC and JANKC die container, the following marking shall be used (example): JAN HC A M 2N7224 ___RHA level (see MIL-PRF-19500). ____Source of manufacturer (see figure 3). ____Unencapsulated. |____ Product assurance level 1/. 1/ Two levels of product assurance levels are provided for unencapsulated devices, H and K (see MIL-PRF-19500. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive and grounded surface. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source. R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ). 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in MIL-PRF-19500, and figures 1, 2, and 3 herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 4. QUALITY ASSURANCE PROVISIONS 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with figure 4, Appendix E of MIL-PRF-19500. 4.2.1 JANHC and JANKC devices. Qualification shall be in accordance with appendix H of MIL-PRF-19500. 9 MIL-PRF-19500/592C 4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV, of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 1/ Gate stress (see 4.5.5) Gate stress test (see 4.5.5) 1/ Method 3470 (see 4.5.4) Method 3470 (see 4.5.4) 1/ Method 3161 (see 4.5.3) Method 3161 (see 4.5.3) IGSS1, IDSS1 Subgroup 2 of table herein Subgroup 2 of table I herein. 10 Method 1042, test condition B Method 1042, test condition B 11 Subgroup 2 of table I herein IGSS1, IDSS1, rDS(on)1, VGS(th)1; IGSS1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. Subgroup 2 of table I herein. IGSS1, IDSS1, rDS(on)1, VGS(th)1 12 MIL-STD-750, method 1042, condition A MIL-STD-750, method 1042, condition A 13 Subgroups 2 and 3 of table I herein; IGSS1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1 = 20 percent of initial value, VGS(th)1 = 20 percent of initial value. Subgroup 2 of table I herein; IGSS1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1 = 20 percent of initial value, VGS(th)1 = 20 percent of initial value. 9 1/ 1/ Shall be performed anytime before screen 10. 4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500, (appendix H), as a minimum die shall be 100 percent probed in accordance with group A, subgroup 2, except test current shall not exceed 20 A. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for quality conformance inspection in accordance with figure 4, Appendix E of MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. (End-point electrical measurements shall be in accordance with the applicable steps of table I, subgroup 2 herein.) 10 MIL-PRF-19500/592C 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 1051 Test condition G. B3 2037 Test condition A. All internal wires for each device shall be pulled separately. If group B3 is to be continued to C6, strength test may be performed after C6. B4 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during the "on" cycle. B5 1042 A separate sample may be pulled for each test. Accelerated steady-state reverse bias; test condition A, VDS = rated, TA = +175(C, t = 120 hours, read and record VBR(DSS) (pre and post) at ID = 1 mA. Read and record IDSS (pre and post) in accordance with table I, subgroup 2 herein. VBR(DSS) delta cannot exceed 10 percent. B5 1042 Accelerated steady-state gate stress; test condition B, VGS = rated, TA = +175(C, t = 24 hours. B6 See 4.5.2. 4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B2 1051 Test condition G. B3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during the "on" cycle. B3 2037 Test condition A. All internal wires for each device shall be pulled separately. If group B3 is to be continued to C6, bond strength test may be performed after C6. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table I, subgroup 2 herein. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 pounds, t = 15 s (not applicable for surface mount devices). C6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor forced air cooling on the device shall be permitted during the "on" cycle. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 11 MIL-PRF-19500/592C 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. R JC(max) = .83(C/W for TO-254AA case style devices and surface mount devices. The following parameter measurements shall apply: a. IM measuring current ............................... 10 mA. b. IH drain heating current............................ 3 A. c. tH heating time ......................................... Steady state (see MIL-STD-750, method 3161). d. VH drain-source heating voltage............... 25 V. e. tMD measurement time delay ................... 30 to 60 s. f. tSW sample window time ......................... 10 s maximum. 4.5.3 Thermal impedance (ZJC measurements). The ZJC measurements shall be performed in accordance with method 3161 of MIL-STD-750. The maximum limit (not to exceed the group A, subgroup 2 limit or figure 4 thermal impedance curve) for ZJC in screening (table IV of MIL-S-19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for Engineering evaluation and disposition. This procedure may be used in lieu of an in line monitor. The following parameter measurements shall apply: a. IM measuring current ............................ 10 mA. b. IH drain heating current ......................... 3 A minimum. c. tH heating time ...................................... 100 ms. d. VH drain-source heating voltage ............ 25 V minimum. e. tMD measurement time delay.................. 30 to 60 s. f. tSW sample window time........................ 10 s maximum. 4.5.4 Single pulsed unclamped inductive switching. a. Peak current, ID ...................................... IAR(max) b. Peak gate voltage, VGS .......................... 10 V. c. Gate to source resistor, RGS .................. 25 Rg 200 ohms. d. Initial case temperature ........................... +25(C, +10(C, -5(C. e. Inductance, L .......................................... f. Number of pulses to be applied............... 1 pulse minimum. 2E AS 2 ( I D1 ) (V BR − V DD ) mH minimum. V BR g. Supply voltage (VDD)...................................... 50 V, (25 V for devices with minimum V(BR)DSS of 100 V). 4.5.5 Gate stress test........................................... VGS = 30 V minimum; t = 250 s minimum. 12 MIL-PRF-19500/592C TABLE I. Group A inspection. Inspection 1/ 2/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 ZJC Subgroup 2 Thermal impedance 3/ 3101 Breakdown voltage, drain to source 3407 2N7224 2N7225 2N7227 2N7228 ID = 1.0 mA dc, bias condition C, VGS = 0 V dc 100 200 400 500 3403 VDS VGS ID = .25 mA Gate reverse current 3411 VGS = +20 V dc and -20 V dc, bias condition C, VDS = 0 Drain current 3413 VDS = 80 percent of rated VDS, bias condition C, VGS = 0 Static drain to source “on”-state resistance 3421 VGS = 10 V dc, condition A, pulsed (see 4.5.1), ID = rated ID2 (see 1.3) VGS(th)1 VGS = 10 V dc, pulsed (see 4.5.1), condition A, ID = rated ID1 (see 1.3) 2N7224 2N7225 2N7227 2N7228 See footnotes at end of table. 13 2.0 V dc V dc V dc V dc 4.0 V dc IGSS1 100 nA dc IDSS1 25 PA dc 0.070 0.100 0.315 0.415 Ohm Ohm Ohm Ohm 0.081 0.105 0.415 0.515 Ohm Ohm Ohm Ohm rDS(on)1 2N7224 2N7225 2N7227 2N7228 3421 (C/W V(BR)DSS Gate to source voltage (threshold) Static drain to source “on”-state resistance .65 rDS(on)2 MIL-PRF-19500/592C TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Forward voltage (source drain diode) 4011 Pulsed (see 4.5.1), ID = ID1 (see 1.3) VSD 2N7224 2N7725 2N7227 2N7228 1.8 1.9 1.7 1.7 V V V V IGSS2 200 nA dc VDS = 80 percent rated IDSS2 0.25 mA dc VGS = 10 V dc, pulsed (see 4.5.1) ID = rated ID2 (see 1.3) rDS(on)3 0.11 0.17 0.68 0.90 Ohm Ohm Ohm Ohm Subgroup 3 T C = TJ = +125(C High temperature operation: Gate reverse current 3411 VGS = +20 V dc and -20 V dc, bias condition C, VDS = 0 Drain current 3413 Bias condition C, VGS = 0 V dc Static drain to source “on”-state resistance 3421 2N7224 2N7225 2N7227 2N7228 Gate to source voltage (threshold) 3403 VGS(th)2 1.0 V dc TC = TJ = -55(C Low temperature operation: Gate to source voltage (threshold) VDS VGS ID = .25 mA dc 3403 VDS VGS, ID = .25 mA dc VGS(th)3 See footnotes at end of table. 14 5.0 V dc MIL-PRF-19500/592C TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Method Conditions 3472 ID = Rated ID2 (see 1.3), VGS = 10 V dc, Gate drive impedance = 2.35 ohms; VDD = 0.5 VBR(DSS) Symbol Limits Min Unit Max Subgroup 4 Switching time test Turn-on delay time Rise time Turn-off delay time Fall time td(on) 35 ns tr 190 ns td(off) 170 ns tf 130 ns Subgroup 5 Safe operating area test 3474 Electrical measurements See figure 5; VDS = 80 percent of rated VDS VDS = 200 V maximum, tp = 10 ms See table I, subgroup 2 Subgroup 6 Not applicable Subgroup 7 Gate charge 3471 Condition B On-state gate charge Qg(on) 2N72224 2N7225 2N7227 2N7228 nC 125 115 110 120 Charge gate to source Qgs 2N7224 2N7225 2N7227 2N7228 nC 22 22 18 19 See footnotes at end of table. 15 MIL-PRF-19500/592C TABLE I. Group A inspection - Continued. Inspection 1/ 2/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 7 - Continued Charge gate to drain Qgd 2N7224 2N7225 2N7227 2N7228 Reverse recovery time 65 60 65 70 3473 VDD 30 V,di/dt 100 A/s ID = ID1 2N7224 2N7225 2N7227 2N7228 1/ 2/ 3/ nC trr ns 500 950 1,200 1,600 For sampling plan, see MIL-PRF-19500. Inspections, conditions, and limits for "U" suffix devices are identical to corresponding non-suffix devices unless otherwise indicated. This test is required for the following endpoint measurement only (not intended for screen 13): JANS, group B, subgroups 3 and 4; JANTX and JANTXV, group B, subgroups 2 and 3; group C, subgroup 6, and group E, subgroup 1. 16 MIL-PRF-19500/592C TABLE II. Group E inspection (all quality levels except JANC) for qualification only. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 1 Temperature cycling Sampling plan 22 devices c=0 1051 Electrical measurements 500 cycles, test condition G See table I, group A, subgroup 2 Subgroup 2 2/ Steady-state reverse bias 1042 Electrical measurements Steady-state gate bias Condition A, 1,000 hours 45 devices c=0 See table I, group A, subgroup 2 1042 Electrical measurements Condition B, 1,000 hours See table I, group A, subgroup 2 Subgroup 3 Not applicable 5 devices c=0 Subgroup 4 Thermal resistance 3161 RJC = see 4.5.2 Subgroup 5 Not applicable 5 devices c=0 Subgroup 6 Repetitive avalanche energy 3469 Peak current IAR = ID; Peak gate voltage VGS = 10 V; Gate to source resistor, RGS 2.5 RGS 200 ohms Temperature = TJ = 150(C +0, -10(C Inductance = 2 E V − V BR DD AR mH min 2 ( I D1 ) V BR Number of pulses to be applied 8 = 3.6 X 10 ; supply voltage (VDD) = 50 V; time in avalanche = 2 s minimum, 20 s minimum; f = 500 Hz minimum 1/ JANHC and JANKC device are qualified with appendix H of MIL-PRF-19500. 2/ A separate sample for each test may be pulled. 17 MIL-PRF-19500/592C FIGURE 4. Thermal impedance curves. 18 MIL-PRF-19500/592C 2N7224 FIGURE 5. Safe operating area graph. 19 MIL-PRF-19500/592C 2N7225 FIGURE 5. Safe operating area graph - Continued. 20 MIL-PRF-19500/592C 2N7227 FIGURE 5. Safe operating area graph - Continued. 21 MIL-PRF-19500/592C 2N7228 FIGURE 5. Safe operating area graph - Continued. 22 MIL-PRF-19500/592C 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation. b. Lead finish and formation as specified (see 3.3.1). c. Type designation, product assurance level and for die acquisition, the manufacturer's letter identification should be specified. 6.3 Substitution information. Devices covered by this specification are oneway substitutable for the following manufacturer's Part or Identifying Number (PIN) listed below. This information in no way implies that manufacturers's part numbers are suitable for the military Part or Identifying Number (PIN). Military PIN Manufacturer’s CAGE code Manufacturer’s and User’s PIN 2N7224 2N7225 2N7227 2N7228 2N7224U 2N7225U 2N7227U 2N2778U 59993 59993 59993 59993 59993 59993 59993 59993 IRFM150 IRFM250 IRFM350 IRFM450 IRFN150 IRFN250 IRFN350 IRFN450 6.3.1 Substitution of DESC drawing. This specification supersedes DESC drawing 89026, dated 19 December 1989. 23 MIL-PRF-19500/592C 6.4 Suppliers of die. The qualified die suppliers will be identified on the QPL (example JANHCA7224). JANC ordering information Military PIN 2N7224 2N7225 2N7227 2N2778 Manufacturer 59993 59993 JANHCA2N7224 JANHCA2N7225 JANHCA2N7227 JANHCA2N7228 JANKCA2N7224 JANKCA2N7225 JANKCA2N7227 JANKCA2N7228 6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 6.6 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Electronics Supply Center, DESC-ELS, Dayton, OH 45444. 6.7 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. Custodians: Army - CR Navy - EC Air Force - 17 NASA - NA Preparing activity: DLA - ES (Project 5961-1838) Review activities: Navy - TD Air Force - 70, 80 24 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/592C 2. DOCUMENT DATE (YYMMDD) 96/06/21 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) (1) Commercial 7. DATE SUBMITTED (YYMMDD) (2) AUTOVON (If applicable) 8. PREPARING ACTIVITY a. NAME Alan Barone b. TELEPHONE (Include Area Code) (1) Commercial (2) AUTOVON 513-296-6048 986-6048 c. ADDRESS (Include Zip Code) Defense Electronics Supply Center ATTN: DESC-ELDT Dayton, OH 45444-5765 IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 AUTOVON 289-2340 DD Form 1426, OCT 89 Previous editions are obsolete 198/290