ETC JANTX2N7228

The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 21 September 1996
IINCH-POUND
MIL-PRF-19500/592C
21 June 1996
SUPERSEDING
MIL-S-19500/592B
31 January 1991
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U,
2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC
This specification supersedes DESC drawing 89026 (see 6.3.1).
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power
transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die,
with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for surface mount devices, and figure 3 for JANHC and JANKC (die)
dimensions.
1.3 Maximum ratings (TA = +25(C, unless otherwise specified).
Type 1/
2N7224
2N7225
2N7226
2N7227
PT 2/
PT 2/
TC
= +25(C
TC
= +25(C
W
W
150
150
150
150
4.0
4.0
4.0
4.0
VGS
ID1 3/
ID2 3/
TC
= +25(C
TC
= +100(C
V dc
A dc
A dc
r20
r20
r20
r20
34.0
27.4
14.0
12.0
21
17
9
8
VISO
at
70,000
foot
IDM
Top
4/
and
TSTG
A dc
A(pk)
qC
qC/W
34.0
27.4
14.0
12.0
136
110
56
48
-55
50
+150
0.83
0.83
0.83
0.83
IS
400
500
R JC
max
See footnotes on next page.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ELDT, 1507 Wilmington Pike, Dayton, OH
45444-5765, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC/NA
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1
FSC 5961
MIL-PRF-19500/592C
Type 1/
IAR
2/
EAS
EAR
rDS(on) max 2/ 5/
VGS = 10 Vdc
ID = ID2
TJ = +25(C
2N7224
2N7225
2N7227
2N7228
TJ = +150(C
A
mj
mj
6
6
34.0
27.4
14.0
12.0
150
500
700
750
15.0
15.0
15.0
15.0
0.070
0.100
0.315
0.415
0.133
0.200
0.693
0.913
1/ Electrical chracteristics for "U" suffix devices are identical to the
corresponding non-"U" suffix devices unless otherwise noted.
2/ Derate linearly 1.2 W/(C for TC > +25(C;
ID =
3/
PT =
T J( max ) - T C
RθJX
T J( max ) - T C
( RθJX) x ( R DS(on) at T J( max )
4/ IDM = 4ID1; ID1 as calculated in footnote 3/.
5/ Pulsed (see 4.5.1).
1.4 Primary electrical characteristics at TC = +25(C (unless otherwise specified).
Max IDSS1
Type
Min V(BR)DSS
VGS(th)1
VGS = 0
1/
VGS = 0
VDS VGS
ID = 1.0 mA dc
TJ = +25(C
ID = 0.25 mA
VDS
= 80 percent
of rated VDS
V dc
PA dc
Ohms
25
25
25
25
0.070
0.100
0.315
0.415
V dc
2N7224
2N7225
2N7227
2N7228
1/
2/
100
200
400
500
Max rDS(on) 2/
VGS = 10 V dc
ID = ID2
Min
2.0
2.0
2.0
2.0
Max
4.0
4.0
4.0
4.0
Unless otherwise specified, electrical characteristics for "U" suffix devices are identical to
the corresponding non "U" devices.
Pulsed (see 4.5.1).
2
MIL-PRF-19500/592C
NOTES:
1.
Dimensions are in inches.
2.
Metric equivalents are given for general information only.
3.
Glass meniscus included in dimension D and E.
4.
All terminals are isolated from the case.
FIGURE 1. Physical dimensions for TO-254AA.
3
MIL-PRF-19500/592C
Dimension
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
.535
.545
13.59
13.84
CH
.249
.260
6.32
6.60
LD
.035
.045
0.89
1.14
LL
.510
.570
12.95
14.48
LO
.150 BSC
3.81 BSC
LS
.150 BSC
3.81 BSC
MHD
.139
.149
3.53
3.78
MHO
.665
.685
16.89
17.40
TL
.790
.800
20.07
20.32
TT
.040
.050
1.02
1.27
TW
.5353
.545
13.59
13.84
Term 1
Drain
Term 2
Source
Term 3
Gate
Notes
3, 4
3, 4
FIGURE 1. Physical dimensions for TO-254AA - Continued.
4
MIL-PRF-19500/592C
Inches
.010
.020
.032
.042
.045
.055
.130
.135
.145
mm
0.25
0.51
0.81
1.07
1.14
1.40
3.30
3.43
3.68
Inches
.150
.152
.162
.410
.420
.445
.455
.620
.630
mm
3.81
3.86
4.11
10.41
10.67
11.30
11.56
15.75
16.00
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for information only.
FIGURE 2. Dimensions and configuration of surface mount package outline.
5
MIL-PRF-19500/592C
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for information only.
3. Unless otherwise specified, tolerance is 0.005 inches (0.13 mm).
4. Physical characteristics of the die thickness = .0187 inch (0.47 mm).
5. Back metal: Cr - Ni - Ag.
6. Top metal: Al.
7. Back contact: Drain.
FIGURE 3. Physical dimensions JANHC and JANKC.
6
MIL-PRF-19500/592C
A version
Dimensions - 2N7224
Dimensions - 2N7225
Dimensions - 2N7227 and 2N7228
Ltr
Inches
Millimeters
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
A
.252
.262
6.40
6.65
.252
.262
6.40
6.65
.252
.262
6.40
6.65
B
.252
.262
6.40
6.65
.252
.262
6.40
6.65
.252
.262
6.40
6.65
C
.027
.037
0.69
0.94
.027
.037
0.69
0.94
.025
.035
0.64
0.89
D
.066
.076
1.68
1.93
.066
.076
1.68
1.93
.043
.053
1.09
1.35
E
.047
.057
1.19
1.45
.047
.057
1.19
1.45
.032
.042
0.81
1.07
F
.013
.023
0.33
0.58
.013
.023
0.33
0.58
.015
.025
0.38
0.64
FIGURE 3. JANHC and JANKC die dimensions - Continued.
7
MIL-PRF-19500/592C
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related
associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however,
supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in
MIL-PRF-19500 and as specified herein.
JANH - - - - - - - - - - - - High reliability product assurance level for unencapsulated devices.
JANK - - - - - - - - - - - - Space reliability product assurance level for unencapsulated devices.
3.3 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1, 2, and 3 herein. Methods used for electrical isolation of the terminal feed through shall employ
materials that contain a minimum of 90 percent AL203 (ceramic). Examples of such construction techniques are metallized ceramic
eyelets or ceramic walled packages.
3.3.1 Lead formation material and finish. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead
finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation material or
finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor
shall perform 100 percent hermetic seal in accordance with screen 14 of Table II of MIL-PRF-19500 and 100 percent DC testing in
accordance with group A, subgroup 2 herein.
3.3.2 Internal construction. Multiple chip construction shall not be permitted to meet the requirements of this specification.
8
MIL-PRF-19500/592C
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.4.1 Marking of JANHC and JANKC die. For JANHC and JANKC die container, the following marking shall be used (example):
JAN HC A M 2N7224
___RHA level (see MIL-PRF-19500).
____Source of manufacturer (see figure 3).
____Unencapsulated.
|____ Product assurance level 1/.
1/ Two levels of product assurance levels are provided for unencapsulated devices, H and K (see MIL-PRF-19500.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.
However, the following handling practices are recommended (see 3.5).
a.
Devices should be handled on benches with conductive and grounded surface.
b.
Ground test equipment, tools, and personnel handling devices.
c.
Do not handle devices by the leads.
d.
Store devices in conductive foam or carriers.
e.
Avoid use of plastic, rubber, or silk in MOS areas.
f.
Maintain relative humidity above 50 percent if practical.
g.
Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.
h.
Gate must be terminated to source. R 100 k, whenever bias voltage is to be applied drain to source.
3.6 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on
the applicable qualified products list before contract award (see 4.2 and 6.2 ).
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in MIL-PRF-19500, and figures 1, 2, and 3 herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein.
4. QUALITY ASSURANCE PROVISIONS
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
qualification inspection in accordance with figure 4, Appendix E of MIL-PRF-19500.
4.2.1 JANHC and JANKC devices. Qualification shall be in accordance with appendix H of MIL-PRF-19500.
9
MIL-PRF-19500/592C
4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see table IV,
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
1/
Gate stress (see 4.5.5)
Gate stress test (see 4.5.5)
1/
Method 3470 (see 4.5.4)
Method 3470 (see 4.5.4)
1/
Method 3161 (see 4.5.3)
Method 3161 (see 4.5.3)
IGSS1, IDSS1
Subgroup 2 of table herein
Subgroup 2 of table I herein.
10
Method 1042, test condition B
Method 1042, test condition B
11
Subgroup 2 of table I herein
IGSS1, IDSS1, rDS(on)1, VGS(th)1;
IGSS1 = 20 nA dc or 100 percent
of initial value, whichever is greater.
IDSS1 = 25 A dc or 100 percent
of initial value, whichever is greater.
Subgroup 2 of table I herein.
IGSS1, IDSS1, rDS(on)1, VGS(th)1
12
MIL-STD-750, method 1042, condition A
MIL-STD-750, method 1042, condition A
13
Subgroups 2 and 3 of table I herein;
IGSS1 = 20 nA dc or 100 percent
of initial value, whichever is greater.
IDSS1 = 25 A dc or 100 percent
of initial value, whichever is greater.
rDS(on)1 = 20 percent of initial value,
VGS(th)1 = 20 percent of initial value.
Subgroup 2 of table I herein;
IGSS1 = 20 nA dc or 100 percent
of initial value, whichever is greater.
IDSS1 = 25 A dc or 100 percent
of initial value, whichever is greater.
rDS(on)1 = 20 percent of initial value,
VGS(th)1 = 20 percent of initial value.
9 1/
1/
Shall be performed anytime before screen 10.
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500, (appendix H), as a minimum
die shall be 100 percent probed in accordance with group A, subgroup 2, except test current shall not exceed
20 A.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
quality conformance inspection in accordance with figure 4, Appendix E of MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. (End-point
electrical measurements shall be in accordance with the applicable steps of table I, subgroup 2 herein.)
10
MIL-PRF-19500/592C
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (JANS) and table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and
delta requirements shall be in accordance with the applicable steps of table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B3
1051
Test condition G.
B3
2037
Test condition A. All internal wires for each device shall be pulled separately. If group B3 is to
be continued to C6, strength test may be performed after C6.
B4
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor
forced air cooling on the device shall be permitted during the "on" cycle.
B5
1042
A separate sample may be pulled for each test. Accelerated steady-state reverse bias; test
condition A, VDS = rated, TA = +175(C, t = 120 hours, read and record VBR(DSS) (pre and
post) at ID = 1 mA. Read and record IDSS (pre and post) in accordance with table I, subgroup 2
herein. VBR(DSS) delta cannot exceed 10 percent.
B5
1042
Accelerated steady-state gate stress; test condition B, VGS = rated, TA = +175(C,
t = 24 hours.
B6
See 4.5.2.
4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
B2
1051
Test condition G.
B3
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor
forced air cooling on the device shall be permitted during the "on" cycle.
B3
2037
Test condition A. All internal wires for each device shall be pulled separately. If group B3 is to
be continued to C6, bond strength test may be performed after C6.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with
the applicable steps of table I, subgroup 2 herein.
Subgroup
Method
Conditions
C2
2036
Test condition A; weight = 10 pounds, t = 15 s (not applicable for surface mount devices).
C6
1042
Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor
forced air cooling on the device shall be permitted during the "on" cycle.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
11
MIL-PRF-19500/592C
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750.
R JC(max) = .83(C/W for TO-254AA case style devices and surface mount devices. The following parameter measurements shall
apply:
a.
IM measuring current ............................... 10 mA.
b.
IH drain heating current............................ 3 A.
c.
tH heating time ......................................... Steady state (see MIL-STD-750, method 3161).
d.
VH drain-source heating voltage............... 25 V.
e.
tMD measurement time delay ................... 30 to 60 s.
f.
tSW sample window time ......................... 10 s maximum.
4.5.3 Thermal impedance (ZJC measurements). The ZJC measurements shall be performed in accordance with
method 3161 of MIL-STD-750. The maximum limit (not to exceed the group A, subgroup 2 limit or figure 4 thermal impedance curve) for
ZJC in screening (table IV of MIL-S-19500) shall be derived by each vendor by means of statistical process control. When the process
has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once
a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the
applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for Engineering
evaluation and disposition. This procedure may be used in lieu of an in line monitor. The following parameter measurements shall apply:
a.
IM measuring current ............................ 10 mA.
b.
IH drain heating current ......................... 3 A minimum.
c.
tH heating time ...................................... 100 ms.
d.
VH drain-source heating voltage ............ 25 V minimum.
e.
tMD measurement time delay.................. 30 to 60 s.
f.
tSW sample window time........................ 10 s maximum.
4.5.4 Single pulsed unclamped inductive switching.
a.
Peak current, ID ...................................... IAR(max)
b.
Peak gate voltage, VGS .......................... 10 V.
c.
Gate to source resistor, RGS .................. 25 Rg 200 ohms.
d.
Initial case temperature ........................... +25(C, +10(C, -5(C.
e.
Inductance, L ..........................................
f.
Number of pulses to be applied............... 1 pulse minimum.
 2E 
AS 

2
 ( I D1 ) 


 (V BR − V DD ) 

 mH minimum.
V BR


g. Supply voltage (VDD)...................................... 50 V, (25 V for devices with minimum
V(BR)DSS of 100 V).
4.5.5 Gate stress test........................................... VGS = 30 V minimum; t = 250 s minimum.
12
MIL-PRF-19500/592C
TABLE I. Group A inspection.
Inspection 1/ 2/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 1
Visual and mechanical
inspection
2071
ZJC
Subgroup 2
Thermal impedance 3/
3101
Breakdown voltage,
drain to source
3407
2N7224
2N7225
2N7227
2N7228
ID = 1.0 mA dc,
bias condition C,
VGS = 0 V dc
100
200
400
500
3403
VDS VGS
ID = .25 mA
Gate reverse current
3411
VGS = +20 V dc and -20 V dc,
bias condition C,
VDS = 0
Drain current
3413
VDS = 80 percent of rated VDS,
bias condition C,
VGS = 0
Static drain to source
“on”-state resistance
3421
VGS = 10 V dc, condition A,
pulsed (see 4.5.1),
ID = rated ID2 (see 1.3)
VGS(th)1
VGS = 10 V dc, pulsed
(see 4.5.1), condition A,
ID = rated ID1 (see 1.3)
2N7224
2N7225
2N7227
2N7228
See footnotes at end of table.
13
2.0
V dc
V dc
V dc
V dc
4.0
V dc
IGSS1
100
nA dc
IDSS1
25
PA dc
0.070
0.100
0.315
0.415
Ohm
Ohm
Ohm
Ohm
0.081
0.105
0.415
0.515
Ohm
Ohm
Ohm
Ohm
rDS(on)1
2N7224
2N7225
2N7227
2N7228
3421
(C/W
V(BR)DSS
Gate to source voltage
(threshold)
Static drain to source
“on”-state resistance
.65
rDS(on)2
MIL-PRF-19500/592C
TABLE I. Group A inspection - Continued.
Inspection 1/ 2/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 2 - Continued
Forward voltage
(source drain diode)
4011
Pulsed (see 4.5.1),
ID = ID1 (see 1.3)
VSD
2N7224
2N7725
2N7227
2N7228
1.8
1.9
1.7
1.7
V
V
V
V
IGSS2
200
nA dc
VDS = 80 percent rated
IDSS2
0.25
mA dc
VGS = 10 V dc,
pulsed (see 4.5.1)
ID = rated ID2 (see 1.3)
rDS(on)3
0.11
0.17
0.68
0.90
Ohm
Ohm
Ohm
Ohm
Subgroup 3
T C = TJ = +125(C
High temperature operation:
Gate reverse current
3411
VGS = +20 V dc and -20 V dc,
bias condition C,
VDS = 0
Drain current
3413
Bias condition C,
VGS = 0 V dc
Static drain to source
“on”-state resistance
3421
2N7224
2N7225
2N7227
2N7228
Gate to source voltage
(threshold)
3403
VGS(th)2
1.0
V dc
TC = TJ = -55(C
Low temperature operation:
Gate to source voltage
(threshold)
VDS VGS
ID = .25 mA dc
3403
VDS VGS,
ID = .25 mA dc
VGS(th)3
See footnotes at end of table.
14
5.0
V dc
MIL-PRF-19500/592C
TABLE I. Group A inspection - Continued.
Inspection 1/ 2/
MIL-STD-750
Method
Conditions
3472
ID = Rated ID2 (see 1.3),
VGS = 10 V dc,
Gate drive impedance = 2.35 ohms;
VDD = 0.5 VBR(DSS)
Symbol
Limits
Min
Unit
Max
Subgroup 4
Switching time test
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
35
ns
tr
190
ns
td(off)
170
ns
tf
130
ns
Subgroup 5
Safe operating area test
3474
Electrical measurements
See figure 5;
VDS = 80 percent of rated VDS
VDS = 200 V maximum,
tp = 10 ms
See table I, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
Qg(on)
2N72224
2N7225
2N7227
2N7228
nC
125
115
110
120
Charge gate to source
Qgs
2N7224
2N7225
2N7227
2N7228
nC
22
22
18
19
See footnotes at end of table.
15
MIL-PRF-19500/592C
TABLE I. Group A inspection - Continued.
Inspection 1/ 2/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 7 - Continued
Charge gate to drain
Qgd
2N7224
2N7225
2N7227
2N7228
Reverse recovery time
65
60
65
70
3473
VDD 30 V,di/dt 100 A/s
ID = ID1
2N7224
2N7225
2N7227
2N7228
1/
2/
3/
nC
trr
ns
500
950
1,200
1,600
For sampling plan, see MIL-PRF-19500.
Inspections, conditions, and limits for "U" suffix devices are identical to corresponding non-suffix devices unless otherwise
indicated.
This test is required for the following endpoint measurement only (not intended for screen 13): JANS,
group B, subgroups 3 and 4; JANTX and JANTXV, group B, subgroups 2 and 3; group C, subgroup 6, and
group E, subgroup 1.
16
MIL-PRF-19500/592C
TABLE II. Group E inspection (all quality levels except JANC) for qualification only.
Inspection 1/
MIL-STD-750
Method
Conditions
Subgroup 1
Temperature cycling
Sampling
plan
22 devices
c=0
1051
Electrical measurements
500 cycles, test condition G
See table I, group A, subgroup 2
Subgroup 2 2/
Steady-state reverse bias
1042
Electrical measurements
Steady-state gate bias
Condition A, 1,000 hours
45 devices
c=0
See table I, group A, subgroup 2
1042
Electrical measurements
Condition B, 1,000 hours
See table I, group A, subgroup 2
Subgroup 3
Not applicable
5 devices
c=0
Subgroup 4
Thermal resistance
3161
RJC = see 4.5.2
Subgroup 5
Not applicable
5 devices
c=0
Subgroup 6
Repetitive avalanche energy
3469
Peak current IAR = ID; Peak gate voltage
VGS = 10 V; Gate to source resistor,
RGS 2.5 RGS 200 ohms
Temperature = TJ = 150(C +0, -10(C
Inductance =
 2 E  V − V 
BR
DD
AR 

 mH min

2
 ( I D1 )   V BR



Number of pulses to be applied
8
= 3.6 X 10 ; supply voltage
(VDD) = 50 V; time in avalanche
= 2 s minimum, 20 s minimum;
f = 500 Hz minimum
1/ JANHC and JANKC device are qualified with appendix H of MIL-PRF-19500.
2/ A separate sample for each test may be pulled.
17
MIL-PRF-19500/592C
FIGURE 4. Thermal impedance curves.
18
MIL-PRF-19500/592C
2N7224
FIGURE 5. Safe operating area graph.
19
MIL-PRF-19500/592C
2N7225
FIGURE 5. Safe operating area graph - Continued.
20
MIL-PRF-19500/592C
2N7227
FIGURE 5. Safe operating area graph - Continued.
21
MIL-PRF-19500/592C
2N7228
FIGURE 5. Safe operating area graph - Continued.
22
MIL-PRF-19500/592C
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
Issue of DODISS to be cited in the solicitation.
b.
Lead finish and formation as specified (see 3.3.1).
c.
Type designation, product assurance level and for die acquisition, the manufacturer's letter identification should be specified.
6.3 Substitution information. Devices covered by this specification are oneway substitutable for the following manufacturer's Part or
Identifying Number (PIN) listed below. This information in no way implies that manufacturers's part numbers are suitable for the military
Part or Identifying Number (PIN).
Military PIN
Manufacturer’s
CAGE code
Manufacturer’s
and User’s PIN
2N7224
2N7225
2N7227
2N7228
2N7224U
2N7225U
2N7227U
2N2778U
59993
59993
59993
59993
59993
59993
59993
59993
IRFM150
IRFM250
IRFM350
IRFM450
IRFN150
IRFN250
IRFN350
IRFN450
6.3.1 Substitution of DESC drawing. This specification supersedes DESC drawing 89026, dated 19 December 1989.
23
MIL-PRF-19500/592C
6.4 Suppliers of die. The qualified die suppliers will be identified on the QPL (example JANHCA7224).
JANC ordering information
Military PIN
2N7224
2N7225
2N7227
2N2778
Manufacturer
59993
59993
JANHCA2N7224
JANHCA2N7225
JANHCA2N7227
JANHCA2N7228
JANKCA2N7224
JANKCA2N7225
JANKCA2N7227
JANKCA2N7228
6.5 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extent of the changes.
6.6 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually been so listed
by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Electronics Supply Center, DESC-ELS, Dayton, OH 45444.
6.7 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extensiveness of the changes.
Custodians:
Army - CR
Navy - EC
Air Force - 17
NASA - NA
Preparing activity:
DLA - ES
(Project 5961-1838)
Review activities:
Navy - TD
Air Force - 70, 80
24
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/592C
2. DOCUMENT DATE
(YYMMDD) 96/06/21
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR,
N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U
JANTX, JANTXV, JANS, JANHC AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as
needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
(1) Commercial
7. DATE SUBMITTED
(YYMMDD)
(2) AUTOVON
(If applicable)
8. PREPARING ACTIVITY
a. NAME
Alan Barone
b. TELEPHONE (Include Area Code)
(1) Commercial
(2) AUTOVON
513-296-6048
986-6048
c. ADDRESS (Include Zip Code)
Defense Electronics Supply Center
ATTN: DESC-ELDT
Dayton, OH 45444-5765
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403,
Falls Church, VA 22041-3466
Telephone (703) 756-2340 AUTOVON 289-2340
DD Form 1426, OCT 89
Previous editions are obsolete
198/290