INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2001. MIL-PRF-19500/543F 7 September 2001 SUPERSEDING MIL-PRF-19500/543E 5 August 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC and JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). 1.2 Physical dimensions. See figure 1 (TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768 and 2N6770 (formerly TO-3)), see figures 2 and 3 for JANHC and JANKC (die) dimensions. (TA = +25°C, unless otherwise specified). 1.3 Maximum ratings. Type 2N6764 2N6766 2N6768 2N6770 Type 2N6764 2N6766 2N6768 2N6770 PT (1) TC = +25° C W PT TC = +25° C W VDS VDG VGS V dc V dc V dc 150 150 150 150 4 4 4 4 100 200 400 500 100 200 400 500 ± ± ± ± IDM (3) EAS EAR IAR A pk A mJ mJ 15 15 15 15 38.0 30.0 14.0 12.0 152 120 56 48 150 500 700 750 VISO 70,000 ft. attitude 400 500 ID1 (2) TC = +25° C A dc A dc ID2 (2) TC = +100° C A dc 38.0 30.0 14.0 12.0 38.0 30.0 14.0 12.0 24.0 19.0 9.0 7.75 20 20 20 20 TSTG and TOP °C -55 to +150 IS Max rDS(on) (1); VGS = 10 V dc ID = ID2 RθJC max TJ = +25° C Ω TJ = +150° C Ω °C/W 0.055 0.085 0.300 0.400 0.105 0.170 0.750 1.000 0.83 0.83 0.83 0.83 See notes on next page. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC/NA DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/543F 1.3 Maximum ratings - Continued. (1) Derate linearly, 1.2 W/°C for TC > +25° C. . PT = TJ max - TC. RθJC (2) . T J max - T C at T J max ID= RθJC + R DS(on) (3) IDM = 4 x ID1 as calculated in note 2. 1.4 Primary electrical characteristics at TC = +25°C. Type Min V(BR)DSS VGS = 0V IAR (1) EAS EAR Max rDS(on) VGSth1 VGS = 10 Vdc VDS ≥ VGS ID = ID2 ID = 0.25 mA Max IDSS1 VGS = 0 V VDS = 80 percent min max of rated VDS µAdc ID = 1 mA dc 2N6764 2N6766 2N6768 2N6770 Vdc A mJ mJ Ω 100 200 400 500 38.0 30.0 14.0 12.0 150 500 700 750 15.0 15.0 15.0 15.0 0.055 0.085 0.3 0.4 2.0 2.0 2.0 2.0 4.0 4.0 4.0 4.0 25 25 25 25 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/543F FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766, TO-204AE; for types 2N6768 and 2N6770, TO-204AA. 3 MIL-PRF-19500/543F Dimensions Ltr Inches Min CD Millimeter Max Min .875 Notes Max 22.23 CH .250 .360 6.35 9.15 HR .495 .525 12.57 13.3 HR1 .131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .057 .063 1.45 1.60 5 .038 .043 0.97 1.10 6 .312 .500 7.92 12.70 LL L1 .050 1.27 3 7 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.04 PS .420 .440 10.67 11.18 PS1 .205 .225 5.21 5.72 s .655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the seating plane. When gauge is not used, measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5. These dimensions pertain to the 2N6764 and 2N6766 types. 6. These dimensions pertain to the 2N6768 and 2N6770 types. 7. Mounting holes shall be deburred on the seating plane side. 8. Drain is electrically connected to the case. FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE; for types 2N6768 and 2N6770, TO-204AA - Continued. 4 MIL-PRF-19500/543F Dimensions 2N6764 and 2N6766 Ltr Inches Millimeters Dimensions 2N6768 and 2N6770 Inches Millimeters Min Max Min Max Min Max Min Max A .252 .262 6.40 6.65 .252 .262 6.40 6.65 B .252 .262 6.40 6.65 .252 .262 6.40 6.65 C .027 .037 0.69 0.94 .025 .035 0.64 0.89 D .012 .022 0.30 0.56 .043 .053 1.09 1.35 E .057 .067 1.45 1.70 .032 .042 0.81 1.07 F .013 .023 0.33 0.58 .015 .025 0.38 0.64 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Unless otherwise specified, tolerance is ± .005 inch (0.13 mm). 4. The physical characteristics of the die thickness are .0187 inch (0.474 mm). The back metals are chromium, nickel and silver. The top metal is aluminum and the back contact is the drain. FIGURE 2. JANHC and JANKC A-version die dimensions. 5 MIL-PRF-19500/543F Dimensions Inches Millimeters Min Max Min Max A .259 .269 6.58 6.83 B .253 .263 6.43 6.68 C .065 .075 1.65 1.91 D .045 .055 1.14 1.40 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Unless otherwise specified, tolerance is ± .005 inch (0.13 mm). 4. The physical characteristics of the die thickness are .014 inch (0.36 mm). The back metals are nickel, aluminum and titanium. The top metal is aluminum and the back contact is the drain. FIGURE 3. JANHC and JANKC B-version die dimensions. 6 MIL-PRF-19500/543F 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2 and 3. 3.4.1 Lead material and finish. Lead material shall be Kovar or Alloy 52; a copper core or a plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of MIL-PRF-19500 and herein. 3.4.3 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static discharge. The following handling practices are recommended (see 3.5) a. Devices shall be handled on benches with conductive and grounded surface. b. Ground test equipment, tools and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate shall be terminated to source, R < 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I. 3.8 Electrical test requirements. The electrical test requirements shall be subgroups specified in 4.4.2 and 4.4.3. 7 MIL-PRF-19500/543F 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be as specified in MIL-PRF-19500, appendix G. 4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I shall not be acceptable. Screen (see MIL-PRF-19500, appendix E, table IV Measurements JANS level (1) (1) (2) (3) JANTX and JANTXV Gate stress test (see 4.5.5) Gate stress test (see 4.5.5). (1) (2) Method 3470 of MIL-STD-750, (see 4.5.4) Method 3470 of MIL-STD-750, (see 4.5.4) (1) (3) Method 3161 of MIL-STD-750, (see 4.5.3) Method 3161 of MIL-STD-750, (see 4.5.3) 9 IGSS1, IDSS1 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSS1, IDSS1, rDS(on)1. VGS(th)1 of subgroup 2 of table I herein. ∆IGSS1 = ± 20 nA dc or ± 100 percent of initial value, whichever is greater. ∆IDSS1 = ± 25 µA dc or ± 100 percent of initial value, whichever is greater IGSS1, IDSS1, rDS(on)1. VGS(th)1 of subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condition A or t = 240 hours Method 1042 of MIL-STD-750, test condition A, t = 48 hours minimum at TA = +175° C minimum. 13 Subgroups 2 and 3 of table I. ∆IGSS1 = ± 20 nA dc or ± 100 percent of initial value whichever is greater. ∆IDSS1 = ± 25 µA dc or ± 100 percent of initial value whichever is greater. ∆rDS(on)1 = ± 20 percent of initial value ∆VGS(th)1 = ± 20 percent of initial value. Subgroup 2 of table I herein. ∆IGSS1 = ± 20 nA dc or ± 100 percent of initial value whichever is greater. ∆IDSS1 = ± 25 µA dc or ± 100 percent of initial value whichever is greater. ∆rDS(on)1 = ± 20 percent of initial value. ∆VGS(th)1 = ± 20 percent of initial value. Shall be performed anytime before screen 10. This test method in no way implies a repetitive avalanche energy rating. This test need not be performed in group A when performed as a screen. 8 MIL-PRF-19500/543F 4.3.1 Screening (JANHC and JANKC). Screening shall be in accordance with appendix E, table IV of MIL-PRF 19500. As a minimum, die shall be 100 percent probed in accordance with group A, subgroup 2 except test current shall not exceed 20 A. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Alternate flow is allowed for conformance inspection in accordance with figure 4 of MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500. End-point electrical and delta measurements shall be in accordance with the applicable tests of table III herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VIa (JANS) and table VIb (JANTX, JANTXV and JAN) of MIL-PRF-19500 and as follows. End-point electrical and delta measurements shall be in accordance with the applicable steps of table III herein. 4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 1051 Test condition G. B4 1042 Test condition D; the heating cycle shall be 1 minimum for 2,000 cycles. B5 1042 Test condition A; VDS = rated VDS (see 1.3), TA = 175° C, t = 120 hours minimum, read and record VBR(DSS) (pre and post) at ID = 1 mA, read and record IDSS (pre and post), (see table III). B5 1042 Test condition B; VGS = rated VGS (see 1.3), TA = 175° C, t = 24 hours minimum. B6 3161 See 4.5.2. 4.4.2.2 Group B inspection, appendix E, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B2 1051 Test condition G. B3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. B5, B6 Not applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VII of MIL-PRF-19500. End-point electrical and delta measurements shall be in accordance with the applicable steps of table III herein. 9 MIL-PRF-19500/543F 4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition A; weight = 10 lbs, t = 15 seconds. C6 1042 Test condition D; 6,000 cycles minimum. The heating cycle shall be 1 minute minimum. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. RθJCmax = 0.83° C /W. a. IM measuring current ........................ 10 mA. b. IH drain heating current .................... 4 A minimum. c. tH heating time .................................. Steady-state (see method 3161 of MIL-STD-750 for definition). d. VH drain-source heating voltage ...... 25 V minimum . e. tMD measurement time delay ........... 30 to 60 µs. f. tSW sample window time .................. 10 µs (max). 4.5.3 Thermal response (∆VSD measurements). The delta VSD measurements shall be performed with method 3161 of MIL-STD-750. The delta VSD conditions (IH and VH) and maximum limit shall be derived by each vendor from the thermal response curves (see figure 4). The read and record delta V SD measurements and conditions for each device in the qualification lot shall be submitted in the qualification report. The chosen delta VSD shall be considered final after the manufacturer has had the opportunity to test five consecutive lots. The following parameter measurements shall apply: a. IM measuring current ........................ 10 mA. b. IH drain heating current .................... 4 A minimum. c. tH heating time ................................. 100 ms. d. VH drain-source heating voltage ....... 25 V minimum. e. tMD measurement time delay ........... 30 to 60 µs. f. tSW sample window time .................. 10 µs (max). 10 MIL-PRF-19500/543F 4.5.4 Single pulsed unclamped inductive switching. a. Peak current ................................. ID1. b. Peak gate voltage, VGS ................ 10 V. c. Gate to source resistor, RGS......... 25 ≤ Rg ≤ 200 ohms. d. Initial case temperature ................. +25°C, +10°C, -5°C. e. Inductance, L ................................. f. Number of pulses to be applied..... 1 pulse minimum. g. Supply voltage (VDD) .................... 50 V, (25 V for devices with minimum V(BR)DSS of 100 V). 2E AS 2 ( I D1 ) (VBR − V DD ) V BR 11 mH minimum. MIL-PRF-19500/543F TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Breakdown voltage drain to source 3407 VGS = 0 V dc; ID = 1 mA dc, bias condition C V(BR)DSS 2N6764 2N6766 2N6768 2N6770 100 200 400 500 Gate to source voltage (threshold) 3403 VDS > VGS; ID = 0.25 mA dc VGS(th)1 Gate current 3411 VGS = +20 and -20 V dc; bias condition C, VDS = 0 Drain current 3413 VGS = 0 V dc; VDS = 80 percent of rated VDS, bias condition C Static drain to source on-state resistance 3421 VGS = 10 V dc, pulsed (see 4.5.1), condition A ID = rated ID2 (see 1.3) TC = +25° C. 4.0 V dc IGSS1 100 nA dc IDSS1 25 µA dc Ω 0.055 0.085 0.3 0.4 3421 VGS = 10 V dc, pulsed (see 4.5.1), condition A ID = rated ID1 (see 1.3) Ω rDS(on)2 2N6764 2N6766 2N6768 2N6770 Forward voltage (source-drain diode) 2.0 rDS(on)1 2N6764 2N6766 2N6768 2N6770 Static drain to source on-state resistance V dc 0.065 0.09 0.40 0.50 4011 Pulsed (see 4.5.1) VGS = 0 V, ID = ID1 2N6764 2N6766 2N6768 2N6770 V dc VSD 1.9 1.9 1.7 1.7 See footnote at end of table. 12 MIL-PRF-19500/543F TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 3 High temperature operation: TC = +125° C Gate current 3411 Drain current 3413 Bias condition C; VGS = +20 and -20 V dc VDS = 0 V dc 3421 200 nA dc IDSS2 1.0 mA dc 0.25 mA dc Bias condition C; VGS = 0 V dc VDS = 100 percent of rated VDS VDS = 80 percent of rated VDS Static drain to source on-state resistance IGSS2 VGS = 10 V dc pulsed (see 4.5.1) ID = rated ID2 (see 1.3) IDSS3 rDS(on)3 Ω 2N6764 2N6766 2N6768 2N6770 Gate to source voltage (threshold) 0.094 0.153 0.66 0.88 3403 Low temperature operation: VGS(th)2 VDS > VGS; ID = 0.25 mA dc 1.0 V dc TC = -55° C Gate to source voltage (threshold) VDS > VGS; ID = 0.25 mA dc VGS(th)3 5.0 V dc td(on) 35 ns 190 ns td(off) 170 ns tf 130 ns Subgroup 4 Switching time test 3472 ID = rated ID1 (see 1.3) VGS = 10 V dc Gate drive impedance = 2.35 Ω VDD = 0.5 VBR(DSS) Turn-on delay time tr Rise time Turn-off delay time Fall time See footnote at end of table. 13 MIL-PRF-19500/543F TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 5 Safe operating area test 3474 Electrical measurements See figure 5, VDS = 80 percent of rated VBR(DSS) tp = 10 ms, VDS = 200 V max. See table III, steps, 1, 2, 3, 4, 5 6 and 7. Subgroup 6 Not applicable Subgroup 7 Gate charge 3471 On-state gate charge Qg(on) Bias condition B 2N6764 2N6766 2N6768 2N6770 125 115 110 120 Qgs Gate to source charge 2N6764 2N6766 2N6768 2N6770 Qgd 2N6764 2N6766 2N6768 2N6770 2N6764 2N6766 2N6768 2N6770 nC 22 22 18 19 Gate to drain charge Reverse recovery time nC nC 65 60 65 70 trr 3473 di/dt = 100 A/µs VDD ≤ 30 V dc, ID = ID1 1/ For sampling plan, see MIL-PRF-19500. 14 nC 500 950 1,200 1,600 MIL-PRF-19500/543F TABLE II. Group E inspection (all quality levels) for qualification only. Inspection 1/ MIL-STD-750 Method Qualification and large lot quality conformance inspection Conditions Subgroup 1 45 devices, c = 0 Temperature cycling 1051 Hermetic seal 1071 Test condition G, 500 cycles Fine leak Gross leak See table III, steps, 1, 2, 3, 4, 5, 6 and 7. Electrical measurements Subgroup 2 1/ Steady-state reverse bias 45 devices, c = 0 1042 See table III, steps, 1, 2, 3, 4, 5, 6 and 7. Electrical measurements Steady-state gate bias Condition A; 1,000 hours 1042 Condition B, 1,000 hours See table III, steps, 1, 2, 3, 4, 5, 6 and 7. Electrical measurements Subgroup 3 Not applicable Subgroup 4 Thermal resistance 5 devices, c = 0 3161 RθJC = 0.83° C/W max. (see 4.5.2) Subgroup 5 Barometric pressure (reduced) 400 V and 500 V only 5 devices, c = 0 1001 Test condition C; I(ISO) = .25 mA (max), V(ISO) = VDS Subgroup 6 Not applicable Subgroup 7 Repetive avalanche energy 5 devices, c = 0 3469 IAR = ID; VGS = 10 V; 2.5 ≤ RGS ≤ 200 ohms; TJ = 150°C +10, -0 °C; Inductance = 2 E VBR − VDD AR 2 ( I D1 ) V BR mH min 8 Number of pulses to be applied = 3.6 X 10 ; (VDD) = 50 V; time in avalanche = 2 µs minimum, 20 µs maximum; f = 1 KHz 1/ A separate sample may be pulled for each test. 15 MIL-PRF-19500/543F TABLE III. Groups A, B, C and E electrical measurements. 1/ 2/ 3/ Step Inspection MIL-STD-750 Method 1. Breakdown voltage drain to source 3407 Symbol Conditions VGS = 0, ID = 1 mA dc bias condition C; Min Gate to source voltage (threshold) 3404 VDS ≥ V GS ID =0.25 mA dc 3. Gate current 3411 VGS = 20 Bias condition C; 4. Saturation voltage and resistance 3413 VGS = 0 VDS = 80 percent of rated VD, bias condition C; 5. Static drain to source on-state resistance 3421 VGS = 10 V dc condition A, pulsed (see 4.5.1). ID = ID2 Static drain to source on-state resistance Forward voltage (source-drain diode) V dc IGSS1 100 nA dc IDSS1 25 µA dc Thermal response 2.0 rDS(on)1 ohms 0.055 0.085 0.3 0.4 3421 VGS = 10 V dc condition A, pulsed (see 4.5.1). ID = ID1 ohms rDS(on)2 0.065 0.090 0.400 0.500 4011 VGS = 0 V dc; ID = ID1 pulsed (see 4.5.1) VSD 3131 ∆VSD See 4.5.3 See footnotes on next page 16 V 1.9 1.9 1.7 1.7 2N6764 2N6766 2N6768 2N6770 8. V dc 4.0 VGS(th)1 2N6764 2N6766 2N6768 2N6770 7. Max 100 200 400 500 2N6764 2N6766 2N6768 2N6770 6. Unit V(BR)DSS 2N6764 2N6766 2N6768 2N6770 2. Limits MIL-PRF-19500/543F TABLE III. Groups A, B, C and E electrical measurements. 1/ 2/ 3/ - Continued. 1/ The electrical measurements for appendix E, table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, table III, steps 1, 2, 3, 4, 5, 6 and 7. b. Subgroup 4, table III, steps 1, 2, 3, 4, 5, 6, 7 and 8. c. Subgroup 5, table III, condition A, steps 1, 2, 3, 4, 5, 6 and 7. No more than 15 percent of the sample shall be permitted to have a ∆VBR(DSS) shift of more than 10 percent and ∆IDSS greater than 50 µA. Subgroup 5, table III, condition B, steps 1, 2, 3, 4, 5, 6 and 7. 2/ The electrical measurements for appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, table III, steps 1, 2, 3, 4, 5, 6 and 7. b. Subgroup 3, table III, steps 1, 2, 3, 4, 5, 6, 7 and 8. 3/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows: a. Subgroup 2, table III, steps 1, 2, 3, 4, 5, 6 and 7. b. Subgroup 3, table III, steps 1, 2, 3, 4, 5, 6 and 7. c. Subgroup 6, table III, steps 1, 2, 3, 4, 5, 6, 7 and 8. 17 MIL-PRF-19500/543F t1 RECTANGLE PULSE DURATION (SECONDS) FIGURE 4. Thermal response curves. 18 MIL-PRF-19500/543F 2N6764 FIGURE 5. Safe operating area graph. 19 MIL-PRF-19500/543F 2N6766 FIGURE 5. Safe operating area graph - Continued. 20 MIL-PRF-19500/543F 2N6768 FIGURE 5. Safe operating area graph - Continued. 21 MIL-PRF-19500/543F 2N6770 FIGURE 5. Safe operating area graph - Continued. 22 MIL-PRF-19500/543F 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. The acquisition requirements are as specified in MIL- PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from: Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and user's PIN. This information in no way implies that manufacturer's PINs are suitable as a substitute for the military Part or Identifying Number (PIN). PIN Manufacturer’s CAGE code Manufacturer’s and user’s PIN 2N6764 2N6766 2N6768 2N6770 59993, 18722 59993, 18722 59993, 18722 59993, 18722 IRF150, IRF151, IRF152, IRF153 IRF250, IRF251, IRF252, IRF253 IRF350, IRF351, IRF352, IRF353 IRF450, IRF451, IRF452, IRF453 6.5 Replacement data. JANTX devices shall be a direct one way replacement for JAN devices (example: JANTX2N6764 for JAN2N6764). 23 MIL-PRF-19500/543F 6.6 Suppliers of JANC die. The qualified JANC suppliers with the applicable letter version (example JANHCAM2N6764) will be identified on the QPL. JANC ordering inforation PIN Manufacturer 59993 18722 2N6764 JANHCA2N6764 JANTXHCA2N6764 JANTXVHCA2N6764 JANSHCA2N6764 JANHCB2N6764 JANTXHCB2N764 JANTXVHCB2N6764 JANSHCB2N6764 2N6766 JANHCA2N6766 JANTXHCA2N6766 JANTXVHCA2N6766 JANSHCA2N6766 JANHCB2N6766 JANTXHCB2N766 JANTXVHCB2N6766 JANSHCB2N6766 2N6768 JANHCA2N6768 JANTXHCA2N6768 JANTXVHCA2N6768 JANSHCA2N6768 JANHCB2N6768 JANTXHCB2N768 JANTXVHCB2N6768 JANSHCB2N6768 2N6770 JANHCA2N6770 JANTXHCA2N6770 JANTXVHCA2N6770 JANSHCA2N6770 JANHCB2N6770 JANTXHCB2N770 JANTXVHCB2N6770 JANSHCB2N6770 6.7 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy -NW Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2365) Review activities: NAVY - TD Air Force - 19, 70, 99 24 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/543F 2. DOCUMENT DATE 7 September 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC and JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99