The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 [similar to TO-205AF (formerly TO-39)], figure 3 (LCC), and figures 4 and 5 for JANHC and JANKC die dimensions. 1.3 Maximum ratings. Unless otherwise specified, TA = +25(C. Type PT 1/ 3/ TC = +25(C W 2N6782 15 2N6784 15 2N6786 15 PT TA = +25(C W 0.8 0.8 0.8 VDS V dc 100 200 400 VDG V dc 100 200 400 VGS V dc 20 20 20 ID1 2/ TC = +25(C A dc 3.50 2.25 1.25 ID2 2/ TC = +100(C A dc 2.25 1.50 0.80 IS A dc 3.50 2.25 1.25 IDM A(pk) 14.0 9.0 5.5 TJ and TSTG (C -55 to +150 -55 to +150 -55 to +150 1/ Derate linearly 0.12 W/(C for TC > +25(C. TJ max - TC PT = RJC ID = 2/ T J( max ) - T C ( RθJX) x ( R DS(on) at T J( max ) 3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/556F Ltr CD CH HD h j k LD LL LS LU L1 L2 P Q r Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .160 .180 4.07 4.57 .335 .370 8.51 9.40 .009 .041 0.23 1.04 .028 .034 0.71 0.86 .029 .045 0.74 1.14 .016 .021 0.41 0.53 .500 .750 12.70 19.05 .200 TP 5.08 TP .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .050 1.27 .010 0.25 45 TP 45 TP Notes 2 3 7,8 7,8 6 7,8 7,8 7,8 5 4 9 6 NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information only. 2. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). 3. Dimension k measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure shown on figure 4. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. FIGURE 1. Physical dimensions for TO-205AF. 2 MIL-PRF-19500/556F Ltr Dimensions Inches Millimeters Min Max Min Max 1.54 1b1 .0595 .0605 1.51 0.85 1b2 .0325 .0335 0.83 e .1995 .2005 5.07 5.09 2.55 e1 .0995 .1005 2.53 h .150 Nominal 3.81 Nominal j .0175 .0180 0.44 0.46 0.90 j1 .0350 .0355 0.89 k .009 .011 0.23 0.28 3.18 Nominal k1 .125 Nominal L .372 .378 9.45 9.60 .055 1.37 1.40 L1 .054 S .182 .199 4.62 5.05 44.90( 45.10( 44.90( 45.10( Notes 5 3 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. The location of the tab locator within the limits indicated will be determined by the tab and flange dimensions of the device being checked. 4. Gauging procedure. The device being measured shall be inserted until its seating plane is .125 .010 inch (3.18 0.25 mm) from the seating surface of the gauge. A force of 8 .5 ounces shall then be applied parallel and symmetrical to the device's cylindrical axis. The seating plane of the device shall be seated against the gauge. The use of a pin straightener prior to insertion in the gauge is permissible. 5. Gauging plane. 6. Drill angle. FIGURE 2. Gauge for lead and tab locations. 3 MIL-PRF-19500/556F NOTES: 1. Dimensions are in inches. Metric equivalents are given for information only. 2. In accordance with ANSI Y14.5M, diameters are equivalent to 1x symbology. Sym. BL BW CH LL1 LL2 LS LS1 LS2 LW Q1 Q2 Q3 TL TW Inches Min .345 .280 .095 .040 .055 .360 .295 .115 .055 .065 .050 BSC .025 BSC .008 BSC .020 .030 .105 REF .120 REF .045 .070 .120 .055 .080 .130 FIGURE 3. Physical dimensions for LCC. 4 Max Millimeters Min 8.77 7.12 2.42 1.02 1.40 Max 9.14 7.49 2.92 1.39 1.65 1.27 BSC 0.635 BSC 0.203 BSC 0.51 0.76 2.67 REF 3.05 REF 1.15 1.78 3.05 1.39 2.03 3.30 MIL-PRF-19500/556F 2N6782, 2N6784, and 2N6786 Ltr A B C D E F Dimensions - 2N6782 Inches Min Max 0.082 0.092 0.085 0.089 0.059 0.069 0.062 0.066 0.021 0.031 0.024 0.028 0.020 0.030 0.023 0.027 0.013 0.023 0.016 0.020 0.014 0.024 0.017 0.021 Millimeters Min Max 2.08 2.34 2.16 2.26 1.48 1.74 1.57 1.68 0.53 0.79 0.61 0.71 0.50 0.76 0.58 0.69 0.32 0.58 0.41 0.51 0.34 0.60 0.43 0.53 Dimensions - 2N6784 Inches Millimeters Min Max Min Max 0.082 0.092 2.08 2.34 0.085 0.089 2.16 2.26 0.062 0.072 1.57 1.83 0.065 0.069 1.65 1.75 0.020 0.030 0.50 0.76 0.023 0.027 0.58 0.69 0.019 0.029 0.47 0.73 0.022 0.026 0.56 0.66 0.012 0.022 0.31 0.57 0.015 0.019 0.38 0.48 0.013 0.023 0.32 0.58 0.016 0.020 0.41 0.51 Dimensions - 2N6786 Inches Millimeters Min Max Min Max 0.101 0.111 2.55 2.81 0.104 0.108 2.64 2.74 0.071 0.081 1.81 2.07 0.074 0.078 1.88 1.98 0.020 0.030 0.50 0.76 0.023 0.027 0.58 0.69 0.019 0.029 0.47 0.73 0.022 0.026 0.56 0.66 0.012 0.022 0.31 0.57 0.015 0.019 0.38 0.48 0.013 0.023 0.32 0.58 0.016 0.020 0.41 0.51 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .0187 inch (0.475 mm) .0050 inch (0.130 mm). FIGURE 4. JANHCA and JANKCA die dimensions. 5 MIL-PRF-19500/556F Dimensions Ltr A B C D E F Inches Min Max 0.096 0.100 0.072 0.076 0.016 0.020 0.011 0.015 0.016 0.020 0.011 0.015 Millimeters Min 2.44 1.83 0.41 0.28 0.41 0.28 Max 2.54 1.93 0.51 0.38 0.51 0.38 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Die thickness = 0.014 nominal. 4. Back metal: Al - Ti - Ni. 5. Top metal: Al. 6. Back contact: Drain. FIGURE 5. JANHCB and JANKCB die dimensions. 6 MIL-PRF-19500/556F Dimensions Ltr A B C D E F Inches Min Max 0.1262 0.1266 0.1817 0.1821 0.033 0.037 0.025 0.029 0.033 0.037 0.022 0.026 Millimeters Min 3.21 4.62 0.84 0.64 0.84 0.56 Max 3.22 4.63 0.94 0.74 0.94 0.66 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Die thickness = 0.014 nominal. 4. Back metal: Al - Ti - Ni. 5. Top metal: Al. 6. Back contact: Drain. FIGURE 6. JANHCC and JANKCC die dimensions. 7 MIL-PRF-19500/556F 1.4 Primary electrical characteristics at TC = +25(C. Min V(BR)DSS Type VGS = 0 V 2/ ID = 1.0 mA dc V dc 2N6782 100 2N6784 200 2N6786 400 VGS(th)1 VDS VGS ID = 0.25 mA dc V dc Min Max 2.0 4.0 2.0 4.0 2.0 4.0 Max IDSS1 VGS = 0 V VDS = 80 percent of rated VDS A dc 25 25 25 Max rDS(on) 1/ VGS = 10 V dc TJ = +25(C TJ = +150(C at ID2 at ID2 ohm ohm 0.60 1.20 1.50 3.15 3.60 9.00 RJC maximum (C/W 8.33 8.33 8.33 1/ Pulsed (see 4.5.1). 2/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified. 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.3). SPECIFICATION MILITARY MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 8 MIL-PRF-19500/556F 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500 and as follows: C --------------------- Coulomb. gFS - - - - - - - - - - - - - - - - - - - - DC forward transconductance. IS - - - - - - - - - - - - - - - - - - - - - Source current through drain (forward biased VSD). V(BR)DSS - - - - - - - - - - - - - - - - - - Drain to source breakdown voltage, all other terminals short-circuited to source. I(ISO) - - - - - - - - - - - - - - - - - - Source pin to case isolation current. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500, and figures 1 (T0-205), 3 (LCC), 4, 5, and 6 (die) herein. 3.3.1 Lead material and finish. Lead material shall be Kovar, Alloy 52, and a copper core is permitted (for T0-205AF). Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.3). 3.3.2 Internal construction. Multiple chip construction shall not be permitted. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. b. c. d. e. f. g. h. Devices should be handled on benches with conductive handling devices. Ground test equipment, tools, and personnel handling devices. Do not handle devices by the leads. Store devices in conductive foam or carriers. Avoid use of plastic, rubber, or silk in MOS areas. Maintain relative humidity above 50 percent if practical. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ). 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 9 MIL-PRF-19500/556F 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and table II herein. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table II of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. 4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100-percent probed in accordance with group A, subgroup 2, except test current shall not exceed 20 A. Screen (see table IV of MIL-PRF-19500) 1/ 1/ 2/ 3 9 1/ 10 11 12 13 Measurement JANS level JANTX and JANTXV levels Gate stress test (see 4.5.5) Gate stress test (see 4.5.5) Method 3161 (see 4.5.3) Method 3161 (see 4.5.3) Method 3470 (optional) Method 3470 (optional) Method 1051, test condition G Method 1051, test condition G IGSS1, IDSS1, subgroup 2 of table I herein Subgroup 2 of table I herein subgroup 2 of table I herein Method 1042, test condition B Method 1042, test condition B IGSS1, IDSS1, rDS(on)1, VGS(th)1, IGSS1, IDSS1, rDS(on)1, subgroup 2 of table I herein; VGS(th)1, subgroup 2 of table I herein. IGSS1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. Method 1042, test condition A, t = 240 hours Method 1042, test condition A Subgroups 2 and 3 of table I herein; Subgroup 2 of table I herein; IGSS1 = 20 nA dc or IGSS1 = 20 nA dc or 100 percent of initial value, whichever is greater. 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. 100 percent of initial value, whichever is greater. rDS(on)1 = 20 percent of initial rDS(on)1 = 20 percent of initial value. value. VGS(th)1 = 20 percent of initial VGS(th)1 = 20 percent of initial value. value. 1/ Shall be performed anytime before screen 10. 2/ Method 3470 is optional if performed as a sample in group A, subgroup 5. 10 MIL-PRF-19500/556F 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for quality conformance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition 3 4 1051 1042 Test condition G. Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum. 5 1042 Accelerated steady-state operation life; test condition A, VDS = rated TA = +175(C, t = 120 hours. Read and record V(BR)DSS (pre and post) at 1 mA = ID. Read and record IDSS (pre and post). Deltas for V(BR)DSS shall not exceed 10 percent and IDSS shall not exceed 25 A. Accelerated steady-state gate stress; condition B, VGS = rated, TA = +175(C, t = 24 hours. 5 2037 Bond strength (Al-Au die interconnects only); test condition A. 6 3161 See 4.5.2. 4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition 2 1051 Test condition G. 3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. 3 2037 Test condition A. All internal bond wires for each device shall be pulled separately. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein. Method Condition 2 2036 Test condition E (Not required for LCC). 6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. Subgroup 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 11 MIL-PRF-19500/556F 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750. RJC(max) = 8.33(C/W. a. Measuring current (IM) - - - - - - - - - - - - - 10 mA. b. Drain heating current (IH) - - - - - - - - - - - - 0.5 A minimum (0.67 A minimum for LCC). c. Heating time (tH) - - - - - - - - - - - - - - - - - Steady-state (see MIL-STD-750, method 3161 for definition). d. Drain-source heating voltage (VH) - - - - - - 20 V minimum (15 V minimum for LCC). e. Measurement time delay (tMD) - - - - - - - - - 10 to 80 s. f. Sample window time (tSW ) - - - - - - - - - - - 10 s maximum. 4.5.3 Thermal impedance (ZJC measurements). The ZJC measurements shall be performed in accordance with MIL-STD-750, method 3161. The maximum limit (not to exceed figure 7, thermal impedance curves and the group A, subgroup 2 limits) for ZJC in screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. This procedure may be used in lieu of an inline process monitor. a. Measuring current (IM) - - - - - - - - - - - - - - 10 mA. b. Drain heating current (IH) - - - - - - - - - - - - 0.5 A minimum (0.67 A minimum for LCC). c. Heating time (tH) - - - - - - - - - - - - - - - - - 10 ms. d. Drain-source heating voltage (VH) - - - - - - 20 V minimum (15 V minimum for LCC). e. Measurement time delay (tMD) - - - - - - - - - 30 to 60 s. f. tSW sample window time - - - - - - - - - - - - 10 s (maximum). 4.5.4 Unclamped inductive switching. a. Peak current (ID) - - - - - - - - - - - - - - - - - - rated ID1 b. Peak gate voltage (VGS) - - - - - - - - - - - - 10 V. c. Gate to source resistor (RGS) - - - - - - - - - 256 RGS 2006. d. Initial case temperature (TC) - - - - - - - - - +25(C +10(C, -5(C. e. Inductance (L) - - - - - - - - - - - - - - - - 100 H 10 percent. f. Number of pulses to be applied - - - - - - - - 1 pulse minimum. g. Pulse repetition rate - - - - - - - - - - - - None. 4.5.5 Gate stress test. VGS = 30 V minimum. t = 250 s minimum. 12 MIL-PRF-19500/556F TABLE I. Group A inspection. Inspection 1/, 4/ Subgroup 1 Visual and mechanical inspection Subgroup 2 Thermal impedance 2/ Breakdown voltage, drain to source 2N6782 2N6784 2N6786 Gate to source voltage (threshold) Gate current Drain current Static drain to source on-state resistance 2N6782 2N6784 2N6786 Drain to source on-state resistance 2N6782 2N6784 2N6786 Forward voltage (source drain diode) 2N6782 2N6784 2N6786 Method 2071 3161 3407 3403 3411 3413 3421 3421 4011 MIL-STD-750 Conditions See 4.5.3 VGS = 0 V; ID = 1.0 mA dc; bias condition C VDS VGS; ID = 0.25 mA dc Bias condition C; VDS = 0 V; VGS = +20 and -20 V dc VGS = 0; bias condition C; VDS = 0 V; VDS = 80 percent of rated VDS VGS = 10 V dc; condition A; pulsed (see 4.5.1); ID = ID2 VGS = 10 V dc; condition A; pulsed (see 4.5.1); ID = ID1 Pulsed (see 4.5.1); VGS = 0 V; IS = ID1 See footnote at end of table. 13 Symbol Min ZJC V(BR)DSS 100 200 400 VGS(th)1 2.0 IGSS1 IDSS1 rDS(on)1 rDS(on)2 VSD Limits Max 2.5 4.0 100 25 0.60 1.50 3.60 0.61 1.60 3.70 1.5 1.5 1.4 Unit (C/W V dc V dc V dc V dc nA dc A dc 6 6 6 6 6 6 V V V MIL-PRF-19500/556F TABLE I. Group A inspection - Continued. Inspection 1/, 4/ Subgroup 3 High temperature operation: Gate current Drain current Gate to source voltage (threshold) Static drain to source on-state resistance 2N6782 2N6784 2N6786 Low temperature operation: Gate to source voltage (threshold) Subgroup 4 Switching time test Turn-on delay time 2N6782 2N6784 2N6786 Rise time 2N6782 2N6784 2N6786 Method 3411 3413 3403 3421 3403 3472 MIL-STD-750 Conditions TC = TJ = +125(C Bias condition C VDS = 0 V VGS = +20 V dc and -20 V dc Bias condition C; VGS = 0 V; VDS = 80 percent rated VDS VDS VGS; ID = 0.25 mA VGS = 10 V dc; pulsed (see 4.5.1); ID = ID2 TC = TJ = -55(C VDS VGS; ID = 0.25 mA ID = ID1; (see 1.3); VGS = 10 V dc; Rg = 7.5 6; VDD = 50 % of VDS See footnote at end of table. 14 Symbol IGSS2 IDSS2 VGS(th)2 rDS(on)3 VGS(th)3 td(on) tr Min 1.0 Limits Max 200 .25 1.08 2.81 7.92 5.0 15 15 15 25 20 20 Unit nA dc mA dc V dc 6 6 6 V dc ns ns ns ns ns ns MIL-PRF-19500/556F TABLE I. Group A inspection - Continued. Inspection 1/, 4/ Subgroup 4 - Continued Turn-off delay time 2N6782 2N6784 2N6786 Fall time 2N6782 2N6784 2N6786 Subgroup 5 Single pulse unclamped Inductive switching 3/ Electrical measurements Safe operating area test Electrical measurements Subgroup 6 Not applicable Subgroup 7 Gate charge Test 1 On-state gate charge 2N6782 2N6784 2N6786 Method 3470 3474 3471 MIL-STD-750 Conditions See 4.5.4 See table I, group A, subgroup 2 See figure 8; VDS = 80 percent of rated VDS VDS 200 V maximum tp = 10 ms See table I, group A, subgroup 2 Condition B See footnote at end of table. 15 Symbol td(off) tf Qg(on) Min Limits Max 25 30 35 20 20 30 6.55 6.24 8.37 Unit ns ns ns ns ns ns nC MIL-PRF-19500/556F TABLE I. Group A inspection - Continued. Inspection 1/, 4/ Subgroup 7 - Continued Test 2 Gate to source charge 2N6782 2N6784 2N6786 Test 3 Gate to drain charge 2N6782 2N6784 2N6786 Reverse recovery time 2N6782 2N6784 2N6786 Method 3473 Symbol Qgs Qgd trr MIL-STD-750 Conditions VDD 50 V di/dt 100 A/s; IF = 3.5 A di/dt 100 A/s; IF = 2.25 A di/dt 100 A/s; IF = 1.25 A Limits Min Max 1.61 1.24 1.55 3.46 4.95 4.97 180 350 540 Unit nC nC ns ns ns ns 1/ For sampling plan, see MIL-PRF-19500. 2/ This test is required for the following end-point measurements only (not intended for screen 13): JANS - group B, subgroups 3 and 4 JAN, JANTX and JANTXV - group B, subgroups 2 and 3; group C, subgroup 6; group E, subgroup 1 3/ This test is optional if performed as a 100 percent screen. 4/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified. 16 MIL-PRF-19500/556F TABLE II. Group E inspection (all quality levels) for qualification only. Inspection 1/ Subgroup 1 Thermal shock (temperature cycling) Electrical measurements Subgroup 2 2/ Steady-state reverse bias Electrical measurements Steady-state gate bias Electrical measurements Subgroup 3 Not applicable Subgroup 4 Thermal resistance Subgroup 5 Not applicable Method 1051 1042 1042 3161 MIL-STD-750 Conditions Condition G, 500 cycles See table I, group A, subgroup 2 Condition A; 1,000 hours See table I, group A, subgroup 2 Condition B; 1,000 hours See table I, group A, subgroup 2 RJC = 8.33(C/W maximum, see 4.5.2 1/ JANHC and JANKC devices are qualified in accordance with MIL-PRF-19500. 2/ A separate sample may be pulled for each test. 17 Qualification conformance inspection 45 devices, c = 0 45 devices, c = 0 5 devices, c = 0 MIL-PRF-19500/556F 2N6782, 2N6782U, 2N6786, 2N6784U, 2N6786, 2N6786U FIGURE 7. Normalized transient thermal impedance. 18 MIL-PRF-19500/556F 2N6782, 2N6782U FIGURE 8. Maximum safe operating area. 19 MIL-PRF-19500/556F 2N6784, 2N6784U FIGURE 8. Maximum safe operating area - Continued. 20 MIL-PRF-19500/556F 2N6786, 2N6786U FIGURE 8. Maximum safe operating area - Continued. 21 MIL-PRF-19500/556F 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Cross-reference and complement list. Parts from this specification may be used to replace the following commercial Part or Identifying Number (PIN). The term PIN is equivalent to the term part number which was previously used in this specification. Preferred types 2N6782 2N6784 2N6786 2N6782U 2N6784U 2N6786U Commercial types IRFF110, IRFF111, IRFF112, IRFF113 IRFF210, IRFF211, IRFF212, IRFF213 IRFF310, IRFF311, IRFF312, IRFF313 IRFE110, IRFE111, IRFE112, IRFE113 IRFE210, IRFE211, IRFE212, IRFE213 IRFE310, IRFE311, IRFE312, IRFE313 6.3 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.1.1 and 2.2). b. The lead finish as specified (see 3.3.1). c. For die acquisition, specify the JANHC or JANKC letter version (see figures 3, 4, and 5). d. Type designation and quality assurance level. 6.4 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example, JANHCA2N6786) will be identified on the QPL. 6.5 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. 22 MIL-PRF-19500/556F CONCLUDING MATERIAL Custodians: Army - CR Navy - EC Air Force - 17 Preparing activity: DLA - CC (Project 5961-1958) Review activities: Army - AR, MI, SM Navy - AS, CG, MC Air Force - 13, 19, 85, 99 23 MIL-PRF-19500/556F STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/556F 2. DOCUMENT DATE 24 December 1997 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON; TYPES 2N6782, 2N6782U, 2N6784;2N6784U, 2N6786, AND 2N6786U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) 7. DATE SUBMITTED (YYMMDD) (1) Commercial (2) AUTOVON (If applicable) 8. PREPARING ACTIVITY a. NAME Alan Barone b. TELEPHONE (Include Area Code) (1) Commercial (2) AUTOVON 614-692-0510 850-0510 c. ADDRESS (Include Zip Code) Defense Supply Center Columbus 3990 East Broad St. Columbus, OH 43216-5000 IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 AUTOVON 289-2340 DD Form 1426, OCT 89 Previous editions are obsolete 24 198/290