ETC JAN2N6804

The documentation and process conversion
measures necessary to comply with this revision shall
be completed by 30 October 1999
INCH-POUND
MIL-PRF-19500/562C
30 July 1999
SUPERSEDING
MIL-S-19500/562B
7 January 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON
TYPES 2N6804 AND 2N6806
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor
intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1, TO-204AA (formerly TO-3), figures 2 and 3 for JANHC and JANKC die dimensions.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
2N6804
2N6806
PT 1/
TC = +25°C
PT
TA = +25°C
VDS
VDG
VGS
ID1 2/
TC = +25°C
ID2 2/
TC = +100°C
IS
IDM
TJ and TSTG
W
W
V dc
V dc
V dc
A dc
A dc
A dc
A(pk)
°C
75
75
4
4
-100
-200
-100
-200
± 20
± 20
-11.0
-6.5
-7.0
-4.0
-11.0
-6.5
-50
-28
-55 to +150
-55 to +150
1/ Derate linearly 0.6 W/°C for TC > +25°C:
PT =
2/ I =
D
TJ max − TC
RΘJC
TJ max − TC
( RΘJC xRDS ( on) atTJ max )
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/562C
1.4 Primary electrical characteristics at TC = +25°C.
Type
Min V(BR)DSS
VGS = 0 V
ID = -1.0 mA dc
VGS(th)1
VDS ≥ VGS
ID = -0.25 mA dc
V dc
2N6804
2N6806
-100
-200
V dc
Min
Max
-2.0
-2.0
-4.0
-4.0
Max rDS(on) 1/
VGS = -10 V dc
Max IDSS1
VGS = 0 V
RθJC
maximum
VDS = 80
percent of
rated VDS
TJ = +25°C
at ID2
TJ = +150°C
at ID2
µA dc
ohm
ohm
°C/W
-25
-25
0.30
0.80
0.60
1.80
1.67
1.67
1/ Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated
Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified manufacturer's list before contract award (see 4.2 and 6.3).
2
MIL-PRF-19500/562C
Symbol
Dimensions
Inches
Notes
Millimeters
Min
Max
Min
Max
CH
0.250
0.360
6.35
9.15
LD
0.038
0.043
0.97
0.110
CD
0.875
3
22.23
PS
0.420
0.440
10.67
11.18
3
PS1
0.205
0.225
5.21
5.72
3
HT
0.060
0.135
1.52
3.43
LL
0.312
0.500
7.92
12.70
0.050
LL1
1.27
MHD
0.151
0.161
3.84
4.09
MHS
1.177
1.197
29.90
30.40
HR
0.495
0.525
12.57
13.34
HR1
0.131
0.188
3.33
4.78
s1
0.655
0.675
16.64
17.15
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. These dimensions should be measured at points 0.050 inch (1.27 mm) to 0.055 inch (1.40 mm) below seating plane.
Measurement will be made at the seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch
(0.10 mm) convex inside a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001
inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall.
5. Mounting holes shall be deburred on the seating plane side.
6. Drain is electrically connected to case.
FIGURE 1. Physical dimensions of transistor (TO-204AA).
3
MIL-PRF-19500/562C
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
0.172
0.186
4.37
4.72
B
0.106
0.120
2.69
3.05
C
0.021
0.029
0.53
0.74
D
0.035
0.043
0.89
1.09
E
0.014
0.022
0.36
0.56
F
0.025
0.036
0.64
0.91
NOTES:
1.
Dimensions are in inches.
2.
Metric equivalents are given for general information only.
3.
The physical characteristics of the die are:
Back metals are chromium, nickel, and silver.
Top metal is aluminum
Back contact is the drain.
4.
The die thickness is 0.0187 inch (0.474 mm), the tolerance is ± 0.0050 inch (0.13 mm).
5.
Unless otherwise specified, tolerance is ± 0.0005 inch (0.13 mm).
FIGURE 2. JANHCA and JANKCA die dimensions for 2N6804.
4
MIL-PRF-19500/562C
Ltr
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
0.173
0.187
4.39
4.75
B
0.108
0.124
2.74
3.15
C
0.022
0.030
0.56
0.76
D
0.030
0.038
0.76
0.97
E
0.012
0.020
0.30
0.51
F
0.021
0.029
0.53
0.74
NOTES:
1.
Dimensions are in inches.
2.
Metric equivalents are given for general information only.
3.
The physical characteristics of the die are:
Back metals are chromium, nickel, and silver.
Top metal is aluminum
Back contact is the drain.
6.
The die thickness is 0.0187 inch (0.474 mm), the tolerance is ± 0.0050 inch (0.13 mm).
7.
Unless otherwise specified, tolerance is ± 0.0005 inch (0.13 mm).
FIGURE 3. JANHCA and JANKCA die dimensions for 2N6806.
5
MIL-PRF-19500/562C
3.2 Associated specification. The individual item performance requirements shall be in accordance with MIL-PRF-19500, and as
specified herein.
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500.
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 (TO-204AA) and figures 2 and 3 (JANHC and JANKC) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of
lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Internal construction. Multiple chip construction shall not be permitted.
3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in
1.3, 1.4, and table I herein.
3.7 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.7.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.
The following handling practices shall be followed:
a.
Devices shall be handled on benches with conductive handling devices.
b.
Ground test equipment, tools, and personnel handling devices.
c.
Do not handle devices by the leads.
d.
Store devices in conductive foam or carriers.
e.
Avoid use of plastic, rubber, or silk in MOS areas.
f.
Maintain relative humidity above 50 percent if practical.
g.
Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.
h.
Gate must be terminated to source, R ≤ 100 k, whenever bias voltage is to be applied drain to source.
3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I.
3.9 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.3 ).
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. Alternate flow is allowed
for qualification inspection in accordance with figure 4 of MIL-PRF-19500.
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and herein.
6
MIL-PRF-19500/562C
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see table IV of
MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
1/
Gate stress test (see 4.5.5)
Gate stress test (see 4.5.5)
1/
Method 3161 (see 4.5.3)
Method 3161 (see 4.5.3)
2/
Method 3470 (optional)
Method 3470 (optional)
3
Test condition G
Test condition G
9
1/
IGSS1, IDSS1,
Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
10
Method 1042, test condition B
Method 1042, test condition B
11
IGSS1, IDSS1, rDS(on)1, VGS(th)1, subgroup 2 of
table I herein;
∆IGSS1 = ± 20 nA dc or ± 100 percent of initial
value, whichever is greater.
∆IDSS1 = ± 25 µA dc or ± 100 percent of initial
value, whichever is greater.
IGSS1, IDSS1, rDS(on)1, VGS(th)1, subgroup 2 of
table I herein;
12
Method 1042, test condition A, t = 240 hours
Method 1042, test condition A; TA = + 175EC
and t = 48 hours
13
Subgroups 2 and 3 of table I herein;
∆IGSS1 = ± 20 nA dc or ±100 percent of initial
value, whichever is greater.
∆IDSS1 = ± 25 µA dc or ± 100 percent of initial
value, whichever is greater.
∆rDS(on)1 = ± 20 percent of initial value.
∆VGS(th)1 = ± 20 percent of initial value.
Subgroups 2 of table I herein;
∆IGSS1 = ± 20 nA dc or ±100 percent of initial
value, whichever is greater.
∆IDSS1 = ± 25 µA dc or ± 100 percent of initial
value, whichever is greater.
∆rDS(on)1 = ± 20 percent of initial value.
∆VGS(th)1 = ± 20 percent of initial value.
1/ Shall be performed anytime before screen 10.
2/ Method 3470 is optional if performed as a sample in group A, subgroup 5.
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be
100-percent probed in accordance with group A, subgroup 2.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
quality conformance inspection in accordance with figure 4 of MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical
measurements (end-points) shall be in accordance with subgroup 2 of table I herein
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall
be in accordance with subgroup 2 of table I herein.
7
MIL-PRF-19500/562C
4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
3
1051
Test condition G.
4
1042
Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.
5
1042
Accelerated steady-state operation life; test condition A; VDS = rated TA = +175°C, t = 120 hours
Accelerated steady-state gate stress; condition B, VGS = rated, TA = +175°C, t = 24 hours.
End point delta measurements (see 4.5.3 herein)
5
2037
Bond strength (Al-Au die interconnects only); test condition A.
6
3161
See 4.5.2.
4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
2
1051
Test condition G.
3
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.
End point delta measurements (see 4.5.3 herein)
3
2037
Test condition A. All internal bond wires for each device shall be pulled separately.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with subgroup 2 of table I
herein.
Subgroup
Method
Condition
2
2036
Test condition A; weight = 10 pounds; t = 15 s.
6
1042
Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.
End point delta measurements (see 4.5.3 herein)
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with subgroup 2 of table I
herein.
8
MIL-PRF-19500/562C
4.4.1 Group E inspection, table IX of MIL-PRF-19500. JANHC and JANKC devices are qualified in accordance with MIL-PRF19500.
Subgroup
Method
Condition
Sampling plan
E1
1051
Test Condition G, 500 cycles
45 devices, c = 0
E2 1/
1042
Test condition A, 1,000 hours.
45 devices, c = 0
E2 1/
1042
Test condition B, 1,000 hours.
45 devices, c = 0
E3
E4
E5
Not applicable
3161
RθJC see 1.67°C/W maximum, see 4.5.2
5 devices, c = 0
Not applicable
1/ A separate sample may be pulled for each test.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750.
RθJC(max) = 1.67°C/W.
a. Measuring current (IM).................................................10 mA.
b. Drain heating current (IH).............................................4 A.
c. Heating time (tH) ..........................................................Steady-state (see MIL-STD-750, method 3161 for definition).
d. Drain-source heating voltage (VH) ...............................25 V.
e. Measurement time delay (tMD).....................................10 to 60 µs.
f. Sample window time (tSW ) ...........................................10 µs maximum.
4.5.3 Thermal impedance (ZθJC measurements). The ZθJC measurements shall be performed in accordance with MIL-STD-750,
method 3161. The maximum limit (not to exceed figure 4, thermal impedance curves and the group A, subgroup 2 limits) for ZθJC in
screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has
exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a
fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the
applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for Engineering
evaluation and disposition. This procedure may be used in lieu of an inline process monitor.
a. Measuring current (IM).................................................10 mA.
b. Drain heating current (IH).............................................4 A minimum.
c. Heating time (tH) ..........................................................100 ms.
d. Drain-source heating voltage (VH) ...............................25 V minimum.
e. Measurement time delay (tMD).....................................30 to 60 µs.
f. tSW sample window time ..............................................10 µs (maximum).
9
MIL-PRF-19500/562C
4.5.4 Unclamped inductive switching.
a. Peak current (ID)..........................................................Rated ID1.
b. Peak gate voltage (VGS) ..............................................-10 V.
c. Gate to source resistor (RGS) ......................................25 Ω ≤ RGS ≤ 200 Ω.
d. Initial case temperature (TC)........................................+25°C +10°C, -5°C.
e. Inductance (L)..............................................................100 µH ±10 percent.
f. Number of pulses to be applied ....................................1 pulse minimum.
g. Pulse repetition rate .....................................................None.
4.5.5 Gate stress test.
VGS = ± 30 V minimum.
t = 250 µs minimum.
10
MIL-PRF-19500/562C
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
Thermal impedance 2/
3161
See 4.5.3
ZθJC
Breakdown voltage, drain to
source
3407
VGS = 0 V; ID = -1.0 mA dc Bias
condition C
V(BR)DSS
2N6804
2N6806
3403
VDS ≥ VGS; ID = -0.25 mA dc
VGS(th)1
Gate reverse current
3411
Bias condition C; VDS = 0 V;
VGS = +20 and -20 V dc
Drain current
3413
Static drain to source
on-state resistance
3421
2N6804
2N6806
V dc
-4.0
V dc
IGSS1
±100
nA dc
VGS = 0; bias condition C;
VDS = 0 V; VDS = 80 percent of rated
VDS
IDSS1
-25
µA dc
VGS = -10 V dc; condition A, pulsed
(see 4.5.1)
rDS(on)1
3421
VGS = -10 V dc; condition A, pulsed
(see 4.5.1)
Ω
Ω
rDS(on)2
0.36
0.94
ID = -11 A dc
ID = -6.5 A dc
4011
-2.0
0.30
0.80
ID = -7 A dc
ID = -4 A dc
2N6804
2N6806
Forward voltage (source
drain diode)
°C/W
-100
-200
Gate to source voltage
(threshold)
Drain to source on-state
resistance
1.2
Pulsed (see 4.5.1), VGS = 0 V
VSD
For devices with a multiple diode
structure
2N6804
2N6806
-4.7
-6.0
IS = -11 A dc
IS = -6.5 A dc
See footnote at end of table.
11
V
V
MIL-PRF-19500/562C
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 3
TC = TJ = +125°C
High temperature operation:
Gate reverse current
3411
Bias condition C, VDS = 0 V
VGS = +20 V dc and -20 V dc
IGSS2
± 200
nA dc
Drain current
3413
Bias condition C, VGS = 0 V
IDSS2
-0.25
mA dc
VDS = 80 percent rated VDS
Gate to source voltage
(threshold)
3403
VDS ≥ VGS; ID = -0.25 mA
VGS(th)2
Static drain to source onstate resistance
3421
VGS = -10 V dc, Pulsed (see 4.5.1)
rDS(on)3
ID = -7 A dc
ID = -4 A dc
2N6804
2N6806
Low temperature operation:
Gate to source voltage
(threshold)
-1.0
V dc
Ω
0.55
1.60
TC = TJ = -55°C
3403
VDS ≥ VGS; ID = -0.25 mA
VGS(th)3
-5.0
V dc
Subgroup 4
Switching time test
3472
ID = rated ID2 (see 1.3);
VGS = -10 V dc; Rg = 7.5 ohms
Turn-on delay time
2N6804
2N6806
VDD = -35 V dc
VDD = -63 V dc
60
50
Rise time
2N6804
2N6806
ns
td(on)
tr
VDD = -35 V dc
VDD = -63 V dc
ns
140
100
See footnote at end of table.
12
MIL-PRF-19500/562C
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 4 – Continued
Turn-off delay time
ns
td(off)
2N6804
2N6806
140
100
VDD = -35 V dc
VDD = -63 V dc
Fall time
tf
VDD = -35 V dc
VDD = -63 V dc
2N6804
2N6806
ns
140
80
Subgroup 5
Single pulse unclamped
inductive switching 3/
3470
Electrical measurements
Safe operating area test
See 4.5.4, 116 devices, c = 0
See table I, subgroup 2 herein.
3474
Electrical measurements
VDS = 80 percent of rated VDS; VDS
≤ 200 V maximum, tp = 10 ms (see
figure 5).
See table I, subgroup 2 herein.
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
Test 1
On-state gate charge
nC
Qg(on)
2N6804
2N6806
29.0
31.0
Test 2
Gate to source charge
Qgs
2N6804
2N6806
7.1
7.0
See footnote at end of table.
13
MIL-PRF-19500/562C
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 7 – Continued
Test 3
nC
Qgd
Gate to drain charge
2N6804
2N6806
Reverse recovery time
21.0
17.0
3473
2N6804
2N6806
VDD ≤ -50 V
ns
trr
di/dt ≤ -100 A/µs; IF = -11 A
di/dt ≤ -100 A/µs; IF = -6.5 A
1/ For sampling plan, see MIL-PRF-19500.
2/ This test is required for the following endpoint measurements only ( not intended for screen 13):
JANS – group B, subgroups 3 and 4.
JANTX and JANTXV group B, subgroups 2 and 3.
group C, subgroup 6.
group E, subgroup 1.
3/ This test is optional if performed as a 100 percent screen.
14
250
400
MIL-PRF-19500/562C
2N6804 and 2N6806
NOTE: These curves refer to devices packaged in a T0-204AA package only.
FIGURE 4. Transient thermal impedance.
15
MIL-PRF-19500/562C
NOTE: These curves refer to devices packaged in a T0-204AA package only.
FIGURE 5. Maximum safe operating area.
16
MIL-PRF-19500/562C
NOTE: These curves refer to devices packaged in a T0-204AA package only.
FIGURE 5. Maximum safe operating area - Continued.
17
MIL-PRF-19500/562C
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Issue of DODISS to be cited in the solicitation (see 2.2.1).
b.
The lead finish as specified (see 3.4.1).
c.
Type designation and quality assurance level.
c.
e.
Packaging requirements (see 5.1).
For die acquisition, the JANHC or JANKC letter version shall be specified (see figures 2 and 3).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturer's List QML-19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
6.4 Cross-reference and complement list. Parts from this specification may be used to replace the following commercial Part or
Identifying Number (PIN's). The term Part or Identifying Number (PIN) is equivalent to the term part number which was previously used
in this specification.
Preferred types
Commercial types
Complement
2N6804
IRF9130, IRF9131, IRF9132, IRF9133
2N6756
2N6806
IRF9230, IRF9231, IRF9232, IRF9233
2N6758
6.5 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example JANHCA2N6804) will
be identified on the QML.
18
MIL-PRF-19500/562C
6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extensiveness of the changes.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA – NA
DLA -CC
Preparing activity:
DLA - CC
(Project 5961- 2083)
Review activities:
Navy - TD
Air Force - 19, 70, 80
19
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/562C
2.
DOCUMENT DATE (YYMMDD)
990730
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6804, 2N6806, JAN,
JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
FAX
EMAIL
7. DATE SUBMITTED
(YYMMDD)
8. PREPARING ACTIVITY
a. Point of contact: Alan Barone
c. ADDRESS: Defense Supply Center
Columbus, ATTN: DSCC-VAC, 3990 East
Broad Street, Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
614-692-0510
850-0510
FAX
614-692-6939
EMAIL
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-68880
Previous editions are obsolete
WHS/DIOR, Feb 99