ETC JAN2N6790

 The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 08 March 1998.
INCH POUND
MIL-PRF-19500/555G
08 December 1997
SUPERSEDING
MIL-S-19500/555F
31 March 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
TYPES 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794 AND 2N6794U
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power
transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figures 1 (TO-205AF), 3 (LCC), and figures 4, 5, 6, and 7 for JANHC and JANKC (die) dimensions.
1.3 Unless otherwise specified, maximum ratings at TA = +25(C.
Type
4/
PT 1/
TC =
+25(C
2N6788
2N6790
2N6792
2N6794
PT
TC =
+25(C
VDS
VDG
VGS
IDM 3/
TJ and T VDS and RJC
VDG
STG
100k ft.
altitude
W
V dc
V dc
V dc
A dc
A dc
A dc
A (pk)
(C
(C/W
20
20
20
20
0.8
0.8
0.8
0.8
100
200
400
500
100
200
400
500
20
20
20
20
6.0
3.5
2.0
1.5
3.5
2.25
1.25
1.0
6.0
3.5
2.0
1.5
24
14
8
6
-55q
to
+150q
6.25
6.25
6.25
6.25
PT =
2/
IS
W
1/ Derate linearly 0.16 W/(C for TC > +25(C.
ID =
ID1 TC ID2
= +25(C TC =
+100(C
( RθJX)
300
300
T J( max ) - T C
RθJX
T J( max ) - T C
x ( R DS(on) at T J( max )
3/ IDM = 4ID1; ID1 as calculated in footnote 2/.
4/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving
this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East
Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC/NA
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/555G
1.4 Unless otherwise specified, primary electrical characteristics at TC = +25(C.
Type
Min V(BR)DSS
VGS(th)1
2/
VGS = 0
VDS VGS
ID = 1.0 mA dc
ID = 0.25 mA
Max IDSS1
VGS = 0
TJ = +25(C
TJ = +150(C
A dc
Ohms
Ohms
25
25
25
25
0.30
0.80
1.80
3.00
0.60
1.80
4.50
7.50
VDS
= 80 percent
of rated VDS
V dc
2N6788
2N6790
2N6792
2N6794
100
200
400
500
V dc
Min
2.0
2.0
2.0
2.0
Max
4.0
4.0
4.0
4.0
Max rDS(on) 1/
VGS = 10 V dc
ID = ID2
1/ Pulsed (see 4.5.1).
2/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
MILITARY
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense
Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this
document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, and figures 1 (T0-205), 3 (LCC), 4, 5, 6, and 7 (die) herein.
2
MIL-PRF-19500/555G
Ltr
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
r
TL
TW
Dimensions
Inches
Millimeters
Min Max Min Max
.305 .335 7.75 8.51
.160 .180 4.07 4.57
.335 .370 8.51 9.40
.200 TP
5.08 TP
.016 .021 0.41 0.53
.500 .750 12.70 19.05
.016 .019 0.41 0.48
.050 1.27
.250 6.35 .100 2.54 .050 1.27
.010 0.25
.029 .045 0.74 1.14
.028 .034 0.71 0.86
45 TP
45 TP
Notes 6
4
7
8, 9
8, 9
8, 9
8, 9
8, 9
6
5
10
4
3
7
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Beyond radius (r) maximum, j shall be held for a minimum length of .011 inch (0.028 mm).
4. Dimension k measured from maximum HD.
5. Outline in this zone is not controlled.
6. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by
direct methods or by the gauge and gauging procedure shown on figure 2.
8. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond L
minimum.
9. All three leads.
10. Radius (r) applies to both inside corners of tab.
11. Drain is electrically connected to the case.
12, In accordance with ANSI Y14.5M, diameters are equivalent to 1x symbology.
FIGURE 1. Physical dimensions for TO-205AF.
3
MIL-PRF-19500/555G
Ltr Dimensions
Inches
Millimeters
Min
Max Min
Max
1.54
1b1 .0595 .0605 1.51
0.85
1b2 .0325 .0335 0.83
e .1995 .2005 5.07
5.09
2.55
e1 .0995 .1005 2.53
h .150 Nominal
3.81 Nominal
j
.0175 .0180 0.44
0.46
0.90
j1 .0350 .0355 0.89
k .009
.011
0.23
0.28
3.18 Nominal
k1 .125 Nominal
L .372
.378
9.45
9.60
.055
1.37
1.40
L1 .054
S .182
.199
4.62
5.05
44.90( 45.10( 44.90( 45.10(
Notes
5
3
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The location of the tab locator within the limits indicated will be determined by the tab and flange dimensions of the
device being checked.
4. Gauging procedure. The device being measured shall be inserted until its seating plane is .125 .010 inch (3.18
0.25 mm) from the seating surface of the gauge. A force of 8 .5 ounces shall then be applied parallel and
symmetrical to the device's cylindrical axis. The seating plane of the device shall be seated against the gauge. The
use of a pin straightener prior to insertion in the gauge is permissible.
5. Gauging plane.
6. Drill angle.
FIGURE 2. Gauge for lead and tab locations.
4
MIL-PRF-19500/555G
NOTES:
1. Dimensions are in inches. Metric equivalents are
given for information only.
2. In accordance with ANSI Y14.5M, diameters are
equivalent to 1x symbology.
Sym.
BL
BW
CH
LL1
LL2
LS
LS1
LS2
LW
Q1
Q2
Q3
TL
TW
Inches
Min
.345
.280
.095
.040
.055
.360
.295
.115
.055
.065
.050 BSC
.025 BSC
.008 BSC
.020
.030
.105 REF
.120 REF
.045
.070
.120
.055
.080
.130
FIGURE 3. Physical dimensions for LCC.
5
Max
Millimeters
Min
8.77
7.12
2.42
1.02
1.40
Max
9.14
7.49
2.92
1.39
1.65
1.27 BSC
0.635 BSC
0.203 BSC
0.51
0.76
2.67 REF
3.05 REF
1.15
1.78
3.05
1.39
2.03
3.30
MIL-PRF-19500/555G
A version
Ltr
A
B
C
D
E
F
Dimensions - 2N6788
Inches
Min Max
.107 .121
.078 .088
.020 .030
.027 .037
.013 .023
.019 .029
Millimeters
Min Max
2.72 3.07
1.98 2.24
0.51 0.76
0.69 0.94
0.33 0.58
0.48 0.74
Dimensions - 2N6790
Inches
Millimeters
Min Max Min Max
.094 .112 2.39 2.85
.083 .099 2.11 2.52
.018 .028 0.46 0.71
.028 .038 0.71 0.97
.015 .025 0.38 0.64
.018 .028 0.46 0.71
Dimensions - 2N6792, 2N6794
Inches
Millimeters
Min
Max Min Max
.131 .147 3.33 3.73
.090 .106 2.29 2.69
.022 .032 0.56 0.81
.028 .038 0.71 0.97
.015 .025 0.38 0.64
.020 .030 0.51 0.76
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Die thickness = .019 .005 inch (0.48 0.13 mm).
4. Back metal: Cr - Ni - Ag.
5. Top metal: Al.
6. Back contact: Drain.
7. Layout of gate fingers shown is typical, specific layout register in accordance with Form 36D.
FIGURE 4. Physical dimensions JANHCA and JANKCA.
6
MIL-PRF-19500/555G
B version
Ltr
A
B
C
D
E
F
Dimensions
Inches
Min
.114
.120
.018
.028
.018
.029
Max
.118
.124
.022
.032
.022
.033
Millimeters
Min
2.9
3.0
0.46
0.71
0.46
0.74
Max
3.0
3.1
0.56
0.81
0.56
0.84
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Die thickness = .014 .005 inch (0.36 0.13 mm).
4. Back metal: Al - Ti - Ni.
5. Top metal: Al.
6. Back contact: Drain.
FIGURE 5. Physical dimensions JANHCB and JANKCB.
7
MIL-PRF-19500/555G
C version
Dimensions 2N6788, 2N6790
Ltr
A
B
C
D
E
F
Inches
Min
.0858
.087
.0258
.0253
.017
.016
Max
.0898
.091
.0298
.0293
.021
.020
Millimeters
Min
2.18
2.21
0.65
0.64
0.43
0.41
Max
2.28
2.31
0.76
0.74
0.53
0.51
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Die thickness = .015 .005 inch (0.38 0.13 mm).
4. Back metal: Ag - Ti - Ni.
5. Top metal: Al.
6. Back contact: Drain.
FIGURE 6. Physical dimensions JANHCC and JANKCC.
8
MIL-PRF-19500/555G
D version
Dimensions 2N6792 and 2N6794
Ltr
A
B
C
D
E
F
Inches
Min
.093
.140
.025
.026
.016
.017
Max
.102
.144
.029
.030
.020
.021
Millimeters
Min
2.36
3.56
0.64
0.66
0.41
0.43
Max
2.59
3.66
0.74
0.76
0.51
0.53
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Die thickness = .015 .005 inch (0.38 0.13 mm).
4. Back metal: Ag - Ti - Ni.
5. Top metal: Al.
6. Back contact: Drain.
FIGURE 7. Physical dimensions JANHCD and JANKCD.
9
MIL-PRF-19500/555G
3.3.1 Lead material and finish. Lead material shall be Kovar or Alloy 52; a copper core is permitted (for T0-205AF). Lead finish shall
be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be
specified in the acquisition document (see 6.4).
3.3.2 Internal construction. Multiple chip construction shall not be permitted.
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.
However, the following handling practices are recommended (see 3.5).
a.
Devices should be handled on benches with conductive and grounded surface.
b.
Ground test equipment, tools, and personnel handling devices.
c.
Do not handle devices by the leads.
d.
Store devices in conductive foam or carriers.
e.
Avoid use of plastic, rubber, or silk in MOS areas.
f.
Maintain relative humidity above 50 percent, if practical.
g.
Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.
h.
Gate must be terminated to source. R 100 k, whenever bias voltage is to be applied drain to source.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3.
3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.2 ).
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
qualification inspection in accordance with MIL-PRF-19500.
4.2.1 Group E. Group E inspection shall be conducted in accordance with MIL-PRF-19500, and table II herein.
10
MIL-PRF-19500/555G
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see table IV
of MIL-STD-19500)
1/
1/ 2/
1/
3
9 1/
11
12 3/
13
1/
2/
3/
Measurement
JANS level
JANTX and JANTXV levels
Gate stress test (see 4.5.5)
Gate stress test (see 4.5.5)
Method 3470 (see 4.5.4)
Method 3470 (see 4.5.4)
Method 3161 (see 4.5.3)
Method 3161 (see 4.5.3)
Temperature cycling, MIL-STD-750,
Temperature cycling, MIL-STD-750,
method 1051, test condition G
method 1051, test condition G
IGSS1, IDSS1
Subgroup 2 of table I herein
Subgroup 2 of table I herein
IGSS1, IDSS1, rDS(on)1, VGS(th)1
IGSS1, IDSS1, rDS(on)1,
of table I, subgroup 2 herein;
VGS(th)1
° IGSS1 = 20 nA dc or 100 percent
of initial value, whichever is
greater.
° IDSS1 = 25 A dc or 100 percent
of initial value, whichever is
greater.
MIL-STD-750, method 1042,
MIL-STD-750, method 1042, condition A;
condition A
or accelerated test TA = +175(C,
t = 48 hours
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
°IGSS1 = 20 nA dc or 100 percent
°IGSS1 = 20 nA dc or 100 percent
of initial value, whichever is
of initial value, whichever is
greater.
greater.
°IDSS1 = 25 A dc or 100 percent
°IDSS1 = 25 A dc or 100 percent
of initial value, whichever is
of initial value, whichever is
greater.
greater.
°rDS(on)1 = 20 percent of initial
°rDS(on)1 = 20 percent initial value.
value.
°VGS(th)1 = 20 percent of initial
°VGS(th)1 = 20 percent initial value.
value.
Shall be performed anytime before screen 4.
This test method in no way implies a repetitive avalanche energy rating. This is a stress test designed to ensure a rugged
product. This test need not be performed in group A when performed as a screen.
Use of accelerated screening option (specified in screen 12 of MIL-PRF-19500) requires a 1,000 hour life test in accordance
with the applicable group E, subgroup 2 life test and end-points specified herein. This data shall be provided to the qualifying
activity for review and acceptance.
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500, as a minimum, die shall be 100
percent probed in accordance with group A, subgroup 2, except test current shall not exceed 20 A.
11
MIL-PRF-19500/555G
4.3.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
conformance inspection in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical
measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (JANS) and table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be
in accordance with the inspections of table I, group A, subgroup 2 herein.
4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B3
1051
Test condition G.
B3
2037
Test condition A. All internal wires for each device shall be pulled separately. If group B3 is to
be continued to C6, strength test may be performed after C6.
B4
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor
forced air cooling on the device shall be permitted during the "on" cycle.
B5
1042
A separate sample may be pulled for each test. Accelerated steady-state reverse bias; test
condition A, VDS = rated, TA = +175(C, t = 120 hours, read and record VBR(DSS) (pre and
post) at ID = -1 mA. Read and record IDSS (pre and post).
B5
1042
Accelerated steady-state gate stress; test condition B, VGS = rated, TA = +175(C, t = 24 hours.
B6
See 4.5.2
4.4.2.2 Group B inspection table VIb (JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
B2
1051
Test condition G.
B3
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor
forced air cooling on the device shall be permitted during the "on" cycle.
B3
2037
Test condition A. All internal wires for each device shall be pulled separately. If group B3 is to
be continued to C6, bond strength test may be performed after C6.
B6
Not applicable.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I,
group A, subgroup 2 herein.
4.4.3.1 Group C inspection (table VII of MIL-PRF-19500).
Subgroup
Method
Conditions
C2
2036
Test condition E (not required for LCC).
C6
1042
Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. No heat sink nor
forced air cooling on the device shall be permitted during the "on" cycle.
12
MIL-PRF-19500/555G
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750.
RJC(max) = 6.25(C/W.
a.
IM measuring current ................................................................................. 10 mA.
b.
IH drain heating current.............................................................................. 1 A minimum.
c.
tH heating time ........................................................................................... Steady state (see MIL-STD-750, method 3161).
d.
VH drain-source heating voltage ................................................................ 14 V minimum.
e.
tMD measurement time delay..................................................................... 30 to 60 s.
f.
tSW sample window time........................................................................... 10 s maximum.
4.5.3 Thermal response (ZJX measurements). The ZJX measurements shall be performed in accordance with
method 3161 of MIL-STD-750. The maximum limit (not to exceed figure 8, thermal impedance curves and the group A subgroup 2 limits)
for ZJXin screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the
process has exhibited control and capability, the capabliity data shall be used to establish the fixed screening limit. In addition to
screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be
plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for
Engineering evaluation and disposition. This procedure may be used in lieu of an inline process monitor.
a.
IM measuring current ................................................................................. 10 mA.
b.
IH drain heating current.............................................................................. 1 A minimum.
c.
tH heating time ........................................................................................... 10 ms.
d.
VH drain-source heating voltage ................................................................ 14 V minimum.
e.
tMD measurement time delay..................................................................... 10 to 80 s.
f.
tSW sample window time........................................................................... 10 s maximum.
4.5.4 Single pulsed unclamped inductive switching.
a.
Peak current, ID ......................................................................................... 2.2 A.
b.
Peak gate voltage, VGS ............................................................................. 10 V.
c.
Gate to source resistor, RGS ..................................................................... 25 Rg 2006.
d.
Initial case temperature .............................................................................. +25(C, +10(C, -5(C.
e.
Inductance, L ............................................................................................. 100 H 10 percent.
f.
Number of pulses to be applied.................................................................. 1 pulse.
4.5.5 Gate stress test.
VGS = 30 V minimum; t = 250 s minimum.
13
MIL-PRF-19500/555G
TABLE I. Group A inspection.
Inspection 1/, 4/
Subgroup 1
Visual and mechanical
inspection
Subgroup 2
Thermal impedance 2/
Breakdown voltage,
drain to source
2N6788
2N6790
2N6792
2N6794
Gate to source voltage
(threshold)
Gate current
Drain current
Static drain to source
"on"-state resistance
2N6788
2N6790
2N6792
2N6794
Static drain to source
"on"-state resistance
2N6788
2N6790
2N6792
2N6794
Forward voltage
(source drain diode)
2N6788
2N6790
2N6792
2N6794
Method
2071
3161
3407
3403
3411
3413
3421
3421
4011
MIL-STD-750
Conditions
See 4.5.3
ID = 1.0 mA dc,
bias condition C,
VGS = 0 V dc
VDS VGS,
ID = .25 mA
VGS = +20 V dc and -20 V dc,
bias condition C, VDS = 0
VDS = 80 percent of rated VDS,
bias condition C, VGS = 0
VGS = 10 V dc, condition A,
pulsed (see 4.5.1),
ID = rated ID2 (see 1.3)
VGS = 10 V dc, pulsed,
(see 4.5.1); condition A,
ID = rated ID1 (see 1.3)
Pulsed (see 4.5.1),
IS = ID1
See footnotes at end of table.
14
Symbol
ZJC
V(BR)DSS
VGS(th)1
IGSS1
IDSS1
rDS(on)1
rDS(on)2
VSD
Limits
Min
Max
2.3
100
200
400
500
2.0
4.0
100
25
0.30
0.80
1.80
3.00
0.35
0.85
1.90
3.10
1.8
1.5
1.4
1.2
Unit
qC/W
V dc
V dc
V dc
V dc
V dc
nA dc
A dc
6
6
6
6
6
6
6
6
V
V
V
V
MIL-PRF-19500/555G
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
Subgroup 3
High temperature operation:
Gate to source voltage
(threshold)
Gate current
Drain current
Static drain to source
"on"-state resistance
2N6788
2N6790
2N6792
2N6794
Low temperature operation:
Gate to source voltage
(threshold)
Subgroup 4
Switching time test
Turn-on delay time
2N6788
2N6790
2N6792
2N6794
Rise time
2N6788
2N6790
2N6792
2N6794
Method
3403
3411
3413
3421
3403
3472
MIL-STD-750
Conditions
TC = TJ = +125(C
VDS VGS
ID = .25 mA dc
VGS = +20 V dc and -20 V dc,
Bias condition C,
VDS = 0
VDS = 80 percent rated,
bias condition C,
pulsed (see 4.5.1)
VGS = 10 V dc,
pulsed (see 4.5.1),
ID = rated ID2 (see 1.3)
TC = TJ = -55(C
VDS VGS,
ID = .25 mA dc
ID = rated ID1 (see 1.3),
VGS = 10 V dc,
Gate drive impedance = 7.5 6
VDD = 35 V dc
VDD = 74 V dc
VDD = 175 V dc
VDD = 225 V dc
VDD = 35 V dc
VDD = 74 V dc
VDD = 175 V dc
VDD = 225 V dc
See footnotes at end of table.
15
Symbol
VGS(th)2
IGSS2
IDSS2
rDS(on)3
VGS(th)3
td(on)
tr
Limits
Min
Max
1.0
200
.25
0.54
1.50
4.00
6.60
5.0
40
40
40
40
70
50
35
30
Unit
V dc
nA dc
mA dc
6
6
6
6
V dc
ns
ns
ns
ns
ns
ns
ns
ns
MIL-PRF-19500/555G
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
Subgroup 4 - Continued
Turn-off delay time
2N6788
2N6790
2N6792
2N6794
Fall time
2N6788
2N6790
2N6792
2N6794
Subgroup 5
Safe operating area test
Electrical measurements
Single pulse unclamped 3/
inductive switching
Electrical measurements
Subgroup 6
Not applicable
Subgroup 7
Gate charge
On-state gate charge
2N6788
2N6790
2N6792
2N6794
Method
3474
3470
3471
MIL-STD-750
Conditions
VDD = 35 V dc
VDD = 74 V dc
VDD = 175 V dc
VDD = 225 V dc
VDD = 35 V dc
VDD = 74 V dc
VDD = 175 V dc
VDD = 225 V dc
See figure 9,
VDS = 80 percent of
rated VDS,
VDS 200 V,
tp = 10 ms
See table I, group A herein
See 4.5.4, 116 devices,
c = 0
See table I, group A herein
Condition B
See footnotes at end of table.
16
Symbol
td(off)
tf
Qg(on)
Limits
Min
Max
40
50
60
60
70
50
35
30
17.0
14.3
15.5
16.7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
nC
MIL-PRF-19500/555G
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
Subgroup 7 - Continued
Charge gate to source
2N6788
2N6790
2N6792
2N6794
Charge gate to drain
2N6788
2N6790
2N6792
2N6794
Reverse recovery time
2N6788
2N6790
2N6792
2N6794
Method
3473
MIL-STD-750
Conditions
VDD 50 V, di/dt 100
A/s, IF = ID1
Symbol
Qgs
Qgd
trr
Limits
Min
Max
4.0
3.0
2.6
3.0
8.0
9.0
8.3
8.7
240
400
650
900
Unit
nC
nC
ns
1/ For sampling plan, see MIL-PRF-19500.
2/ This test is required for the following end point measurements only (not intended for screen 13):
JANS - group B, subgroups 3 and 4;
JAN, JANTX, and JANTXV - group B, subgroups 2 and 3;
group C, subgroup 6;
group E, subgroup 1
3/ This test need not be performed in group A when performed as a 100 percent screen.
4/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
17
MIL-PRF-19500/555G
TABLE II. Group E inspection (all product assurance levels).
Inspection
Subgroup 1
Temperature cycling
Hermetic seal
Electrical measurements
Subgroup 2
Steady-state reverse bias
Electrical measurements
Steady-state gate bias
Electrical measurements
Subgroup 3
Not applicable
Subgroup 4
Thermal resistance
Subgroup 5
Barometric pressure
(reduced)
2N6792
2N6794
MIL-STD-750
Method Conditions
1051
Condition G, 200 cycles
1071
See table I, group A, subgroup 2
1042
Condition A, 1,000 hours
See table I, group A, subgroup 2
1042
Condition B, 1,000 hours,
VGS = 80 percent of rated (see 3.1)
See table I, group A, subgroup 2
3161
RJC = 6.25(C/W (maximum),
See 4.5.2
1001
Test condition C, VISO = VDS
maximum limit; IISO = .25 mA dc
VDS = 300 V
VDS = 300 V
18
Qualification
conformance
inspection
22 devices, c = 0
22 devices, c = 0
10 devices, c = 0
5 devices, c = 0
MIL-PRF-19500/555G
FIGURE 8. Transient thermal response.
19
MIL-PRF-19500/555G
2N6788, 2N6788U
FIGURE 9. Maximum safe operating area.
20
MIL-PRF-19500/555G
2N6790, 2N6790U
FIGURE 9. Maximum safe operating area - Continued.
21
MIL-PRF-19500/555G
2N6792, 2N6792U
FIGURE 9. Maximum safe operating area - Continued.
22
MIL-PRF-19500/555G
2N6792, 2N6792U
FIGURE 9. Maximum safe operating area - Continued.
23
MIL-PRF-19500/555G
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-PRF-19500.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see
2.2.1).
b.
Lead finish (see 3.3.1).
c.
Type designation and product assurance level.
d.
Packaging requirements (see 5.1).
6.3 Cross-reference complement list. Parts from this specification may be used to supersede the following commercial Part or
Identifying Number (PIN) listed below. Complementary transistors are covered by MIL-PRF-19500/564:
Preferred types 1/
2N6788
2N6790
2N6792
2N6794
2N6788U
2N6790U
2N6792U
2N6794U
Commercial types
IRFF120
IRFF220
IRFF320
IRFF420
IRFE120
IRFE220
IRFE320
IRFE420
1/ Prefixes are JAN, JANTX, JANTXV, or JANS
6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extent of the changes.
6.5 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually been so listed
by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
24
MIL-PRF-19500/555G
6.6 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example, JANHCA2N6782) will
be identified on the QPL.
PIN
2N6788
2N6790
2N6792
2N6794
JANC ordering information
Manufacturer
59993
18722
JANHCA2N6788 JANHCB2N6788
JANKCA2N6788 JANKCB2N6788
JANHCA2N6790 JANHCB2N6790
JANKCA2N6790 JANKCB2N6790
JANHCA2N6792 JANHCB2N6792
JANKCA2N6792 JANKCB2N6792
JANHCA2N6794 JANHCB2N6794
JANKCA2N6794 JANKCB2N6794
17856
JANHCC2N6788
JANKCC2N6788
JANHCC2N6790
JANKCC2N6790
JANHCD2N6792
JANKCD2N6792
JANHCD2N6794
JANKCD2N6794
6.7 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extensiveness of the changes.
CONCLUDING MATERIAL
Custodians:
Army - ER
Navy - EC
Air Force - 17
NASA - NA
Preparing activity:
DLA - CC
(Project 5961-1957)
Review activities:
Army - AR, MI, SM
Navy - AS, CG, MC
Air Force - 13, 19, 85, 99
25
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/555G
2. DOCUMENT DATE
(YYMMDD) 97/12/08
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6788,
2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794 AND 2N6794U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as
needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
(1) Commercial
7. DATE SUBMITTED
(YYMMDD)
(2) AUTOVON
(If applicable)
8. PREPARING ACTIVITY
a. NAME
Alan Barone
b. TELEPHONE (Include Area Code)
(1) Commercial
(2) AUTOVON
614-692-0510
850-0510
c. ADDRESS (Include Zip Code)
Defense Supply Center Columbus
ATTN: DSCC-VAT
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403,
Falls Church, VA 22041-3466
Telephone (703) 756-2340 AUTOVON 289-2340
DD Form 1426, OCT 89
Previous editions are obsolete
198/290