ETC JANTX2N5339

The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 June 2002.
INCH-POUND
MIL-PRF-19500/560E
6 March 2002
SUPERSEDING
MIL-PRF-19500/560D
3 January 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING
TYPE 2N5339 AND 2N5339U3 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon switching transistors. Four
levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two
levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-39), figures 2, 3, and 4 for JANHC and JANKC (die) and figure 5 for
U3 devices (TO-276AA) dimensions.
1.3 Maximum ratings.
Types
2N5339
2N5339U3
PT (1)
TA =
+25°C
PT (2)
TC =
+25°C
VCBO
VCEO
VEBO
IC
IB
TOP and TSTG
RθJC
W
W
V dc
V dc
V dc
A dc
A dc
°C
°C/W
1.0
1.0
100
100
100
100
100
6.0
6.0
5.0
5.0
1.0
1.0
-65 to +200
-65 to +200
17.5
12.5
(1) Derate linearly at 5.71 mW/°C above TA > +25°C.
(2) Derate linearly from 80 mW/°C to 571 mW°C.
1.4 Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.)
Limits
hFE1 (1)
VCE = 2.0 V dc; IC = 0.5 A dc
hFE2 (1)
VCE = 2.0 V dc; IC = 2.0 A dc
hFE3 (1)
VCE = 2.0 V dc; IC = 5.0 A dc
60
60
240
40
Min
Max
(1) Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/560E
1.4 Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.) - Continued.
Limits
|hFE|
f = 10 MHz
VCE = 10 V dc
IC = 0.5 A dc
Min
3.0
Max
15.0
Switching
Cobo
VCE = 10 V dc
IE = 0
100 kHz ≤ f ≤
1 MHz
VCE(SAT)1
VBE(SAT)1
IC = 2.0 A dc
IB = 0.2 A dc
(1)
IC = 2.0 A dc
IB = 0.2 A dc
(1)
See figure 4
ton
See figure 5
toff
pF
µs
µs
V dc
V dc
250
0.2
2.2
0.7
1.2
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/560E
FIGURE 1. Physical dimensions (TO-39).
3
MIL-PRF-19500/560E
Symbol
Dimensions
Inches
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
P
Q
r
α
Notes
Notes
Millimeters
Min
0.305
0.240
0.335
Max
0.355
0.260
0.370
Min
7.75
6.10
8.51
0.016
0.500
0.016
0.200 TP
0.021
0.750
0.019
0.050
0.41
12.70
0.41
0.250
0.029
0.028
0.100
0.045
0.034
6.35
0.74
0.71
2.54
Max
8.51
6.60
9.40
5.08 TP
0.53
19.05
0.48
1.27
1.14
0.86
0.050
0.010
1.27
0.25
45° TP
1, 2, 8, 9
45° TP
1, 2, 8, 9
6
7
7
7
7
7
3
10
5
4
11
6
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6. Leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating
plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be
measured by direct methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
8. Lead designation, depending on device type, shall be as follows:
9.
10.
11.
Lead number
TO-39
1
2
3
Emitter
Base
Collector
Lead number three is electrically connected to case.
Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
Symbol r applied to both inside corners of tab.
FIGURE 1. Physical dimensions (TO-39) - Continued.
4
MIL-PRF-19500/560E
Letter
Dimensions
Inches
Millimeters
Max
Min
Min
Max
A
0.120
0.124
3.05
3.15
C
0.120
0.124
3.05
3.15
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die are:
Thickness: 0.008 inch (0.20 mm) to 0.012 inch (0.30 mm).
Top metal: Aluminum 40,000 Å minimum, 50,000 Å nominal.
Back metal: Gold 2,500 Å minimum, 3,000 Å nominal.
Back side: Collector.
Bonding pad: B = 0.015 inch (0.38 mm) x 0.072 inch (1.83 mm).
E = 0.015 inch (0.38 mm) x 0.060 inch (1.52 mm).
4. Unless otherwise specified, tolerance is ± 0.005 inch (0.13 mm).
FIGURE 2. Physical dimensions JANHCA and JANKCA.
5
MIL-PRF-19500/560E
Letter
Dimensions
Inches
Millimeters
Max
Min
Min
Max
A
0.098
0.102
2.49
2.59
C
0.098
0.102
2.49
2.59
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die are:
Thickness: 0.006 inch (0.15 mm) to 0.010 inch (0.25 mm).
Top metal: Aluminum 25,000 Å minimum, 37,500 Å nominal.
Back metal: Gold 1,500 Å minimum, 6,500 Å nominal.
Back side: Collector.
4. Unless otherwise specified, tolerance is ± 0.005 inch (0.13 mm).
FIGURE 3. Physical dimensions JANHCB and JANKCB.
6
MIL-PRF-19500/560E
1.
2.
3.
4.
Chip size
Chip thickness
Top metal
Back metal
5. Backside
6. Bonding pad
0.120 x 0.120 inches ± 2 inches
0.010 ± 0.0015inches nominal
Aluminum 30,000Å minimum, 33,000Å nominal
A. Al/Ti/Ni/Ag12kÅ/3kÅ/7kÅ/7kÅ minimum15kÅ/5kÅ/10kÅ/10kÅ nominal.
B. Gold 2,500Å minimum, 3000Å nominal
Collector
B = 0.052 x 0.012 inches, E = 0.084 x 0.012 inches
FIGURE 4. Physical dimensions JANHCC and JANKCC.
7
MIL-PRF-19500/560E
BOTTOM VIEW
Dimensions
Symbol
A
B
C
D
E
F
G
H
I
J
K
L
Inches
Min
0.111
0.291
0.395
0.281
0.220
0.115
0.09
0.145
0.073 TYP.
0.083 TYP.
0.005 TYP.
0.015 TYP.
Max
0.122
0.301
0.405
0.291
0.230
0.125
0.100
0.155
-
Millimeters
Min
Max
2.82
3.10
7.39
7.65
10.03
10.29
7.14
7.39
5.59
5.84
2.92
3.18
2.29
2.54
3.68
3.94
1.85 TYP.
2.11 TYP.
0.13 TYP.
0.38 TYP.
-
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
SCHEMATIC
1
3
2
FIGURE 5. Physical dimensions and configuration (U3) (SMD 5) (TO-276AA).
8
MIL-PRF-19500/560E
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 (TO-39), figures 2, 3, and 4 (JANHC and JANKC) and figure 5 for U3 (TO–276AA)
devices herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with in
MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the
acquisition document (see 6.2).
3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. At the option of the manufacturer,
marking may be omitted from the body, but shall be retained on the initial container.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, group
A herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
9
MIL-PRF-19500/560E
4.3 Screening (JAN, JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
MIL-PRF-19500)
Measurements
JANS level
JANTX and JANTXV levels
*
3C
Thermal impedance method 3131 of
MIL-STD-750.
Thermal impedance method 3131 of
MIL-STD-750.
9
ICBO1 and hFE2
Not applicable
11
ICBO1; hFE2,
∆ICBO1 = ± 100 percent of initial value
or 1.0 µA dc, whichever is greater;
∆hFE2 = ± 15 percent
ICBO1 and hFE2
12
See 4.3.1
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
∆ICBO1 = ± 100 percent of initial value
or 1.0 µA dc, whichever is greater;
∆hFE2 = ± 15 percent
Subgroup 2 of table I herein;
∆ICBO1 = ± 100 percent of initial value or
1.0 µA dc, whichever is greater;
∆hFE2 = ± 15 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the
general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve TJ = minimum 175°C
and minimum power dissipation of PD = 75 percent PT max as defined in 1.3.
* 4.3.2 Screening for JANHC and JANKC. Screening for JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 Discrete Semiconductor Die/Chip Lot Acceptance. Burn-in duration for JANKC level follows JANS
requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein.
10
MIL-PRF-19500/560E
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)
shall be in accordance with group A, subgroup 2 herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500 for
JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in
accordance with group A, subgroup 2 herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
B4
1037
VCB ≥ 10 V dc.
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample.) VCB = 10 V dc; PD ≥ 100 percent of rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table Via, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust adjust TA or PD to
achieve TJ = +225°C minimum.
B5
2037
Test condition A.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
*
Step
Method
Condition
1
1027
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall
be applied to the device to achieve TJ = +175°C minimum, and minimum power
dissipation of 75 percent of max rated PT (see 1.3 herein); n = 45, C = 0.
2
1027
The steady-state life test of step 1 shall be extended to 1,000 hours for each die
design. Samples shall be selected from a wafer lot every twelve months of wafer
production. Group B step 2 shall not be required more than once for any single
wafer lot. n = 45, C = 0.
3
1032
High- temperature life (non-operating), TA = +200°C, t = 340 hours, n = 22,
C = 0.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein.
11
MIL-PRF-19500/560E
* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.
Subgroup
*
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.3.
C6
1037
For solder die attach: VCB ≥ 10 V dc, TA = Room ambient as defined in the
general requirements of MIL-STD-750. 6,000 cycles.
C6
1027
For eutectic die attach: VCB ≥ 10 V dc, adjust PT to achieve TJ = + 175°C min.
* 4.4.4 Group E inspection, Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table IX of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in
accordance with group A, subgroup 2 herein. Group E inspection shall be performed for qualification or requalification only. In case qualification was awarded to a prior revision of the spec sheet that did not request the
performance of table II tests, the tests specified in table II herein must be performed to maintain qualification.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Thermal resistance (to be performed for qualification inspection only). The thermal resistance
measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall
apply:
a.
Collector current magnitude during power application shall be 0.15 A dc.
b.
Collector to emitter voltage magnitude shall be 20 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference point temperature shall be + 25°C ≤ TR ≤ +35° C and recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit shall be RθJC = 17.5° C/W for TO-39 devices and RθJC = 1.7.5° C/W for U3 devices.
12
MIL-PRF-19500/560E
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limit
Min
Unit
Max
* Subgroup 1 2/
Visual and mechanical 3/
Examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
2026
n = 15 leads, c = 0
Resistance to solvents
3/, 4/, 5/
1022
n = 15 devices, c = 0
Temp Cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic Seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical
measurements 4/
Bond strength 3/, 5/
Decap internal visual
(design verification)
Group A, subgroup 2
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
2075
n = 4 device, c = 0
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
V dc
Breakdown voltage,
collector to emitter
3011
Bias condition D; IC = 50 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
Collector to emitter cutoff
current
3041
Bias condition D; VCE = 100 V dc
ICEO
100
µA dc
Collector to emitter cutoff
current
3041
Bias condition A; VBE = 1.5 V dc; VCE
= 90 V dc
ICEX1
10
µA dc
Collector to base cutoff
current
3036
Bias condition D; VCB = 100 V dc
ICBO
10
µA dc
See footnote at end of table.
13
100
MIL-PRF-19500/560E
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limit
Min
Unit
Max
Subgroup 2 - continued
µA dc
Emitter to base, cutoff
current
3061
Bias condition D; VEB = 6.0 V dc
IEBO
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 0.5 A dc, pulsed
(see 4.5.1)
hFE1
60
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 2.0 A dc; pulsed
(see 4.5.1)
hFE2
60
Forward - current
transfer ratio
3076
VCE = 2.0 V dc; IC = 5.0 A dc; pulsed
(see 4.5.1)
hFE3
40
Collector to emitter
voltage (saturated)
3071
IC = 2.0 A dc; IB = 0.2 A dc; pulsed
(see 4.5.1)
VCE(SAT)1
0.7
V dc
Collector to emitter
voltage (saturated)
3071
IC = 5.0 A dc; IB = 0.5 A dc; pulsed
(see 4.5.1)
VCE(SAT)2
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 2.0 A dc;
IB = 0.2 A dc; pulsed (see 4.5.1)
VBE(SAT)1
1.2
V dc
Base to emitter voltage
(saturated)
3066
Test condition A; IC = 5.0 A dc;
IB = 0.5 A dc; pulsed (see 4.5.1)
VBE(SAT)2
1.8
V dc
ICEX2
1.0
mA dc
100
240
Subgroup 3
High - temperature
operation
Collector to emitter
cutoff current
TA = +150°C
3041
Low-temperature
operation
Forward - current
transfer ratio
Bias condition A; VCE = 90 V dc; VBE
= 1.5 V dc;
TA = -55°C
3076
VCE = 2.0 V dc; IC = 2.0 A dc; Pulsed
(see 4.5.1)
See footnote at end of table.
14
hFE4
12
MIL-PRF-19500/560E
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limit
Unit
Min
Max
3
15
Subgroup 4
Small - signal short circuit forward current transfer ratio
3306
VCE = 10 V dc; IC = 0.5 A dc;
f = 10 MHz
|hfe|
Open circuit output
capacitance
3236
VCB = 10 V dc; IE = 0; 100 kHz
≤ f ≤ 1 MHz
Cobo
250
pF
Input capacitance
(output open circuited)
3240
VBE = 2.0 V dc; IC = 0; 100 kHz
≤ f ≤ 1 MHz (see 4.5.2)
Cibo
1,000
pF
Pulse delay time
3251
See figure 6
td
100
ns
Pulse rise time
3251
See figure 6
tr
100
ns
Pulse storage time
3251
See figure 7
ts
2
µs
Pulse fall time
3251
See figure 7
tf
200
ns
3051
TC = +25°C; t ≥ 0.5 s; 1 cycle
Pulse response
Subgroup 5
Safe operating area
(continuous dc)
Test 1
VCE = 2.0 V dc; IC = 5.0 A dc
Test 2
VCE = 5.0 V dc; IC = 2.0 A dc
Test 3
End-point electrical
measurements
VCE = 90 V dc; IC = 55 mA dc
See table I, group A, subgroup 2
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for laser marked devices.
5/ Not required for JANS devices.
15
MIL-PRF-19500/560E
* TABLE II. Group E inspection (all quality levels) – for qualification only.
Inspection
MIL-STD-750
Method
Conditions
Subgroup 1
Temperature cycling
(air to air)
Qualification
45 devices
c=0
1051
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
1071
Electrical measurements
See group A, subgroup 2 and table III herein.
45 devices
c=0
Subgroup 2
Intermittent life
1037
Electrical measurements
VCB = 10 V dc, 6,000 cycles.
See group A, subgroup 2 and table III herein.
Subgroups 3, 4, 5, 6 and
7
Not applicable
Subgroup 8
Reverse stability
1033
Condition A for devices ≥ 400 V
Condition B for devices < 400 V
16
45 devices
c=0
MIL-PRF-19500/560E
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50Ω.
2. Sampling oscilloscope: Zin ≥ 1 MΩ, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: IC = 2 A, IB1 = 200 mA.
FIGURE 6. Saturated turn-on switching waveform and time test circuit.
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source
impedance shall be 50Ω.
2. Sampling oscilloscope: Zin ≥ 1 MΩ, Cin ≤ 20 pF, rise time ≤ 20 ns.
3. ton conditions: CI = 2 A, IB1 = IB2 = 200 mA.
FIGURE 7. Saturated turn-off switching time waveform and test circuit.
17
MIL-PRF-19500/560E
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DODISS to be cited in the solicitation and if required, the specific issue of individual documents
referenced (see 2.2.1).
c.
The lead finish as specified (see 3.4.1).
d.
Type designation and quality assurance level.
e.
Packaging requirements (see 5.1).
f.
For die acquisition, the JANHC or JANKC letter version shall be specified (see figures 2 and 3).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List QML No.19500 whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Application guidance. The following PNP type transistor is complimentary to the NPN device listed herein.
NPN
2N5339
PNP
2N6193
6.5 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example,
JANHCA2N6193) will be identified on the QML.
JANC ordering information
PIN
Manufacturers
33178
2N5339
JANHCA2N5339
JANKCA2N5339
34156
JANHCB2N5339
JANKCB2N5339
18
43611
JANHCC2N5339
JANKCC2N5339
MIL-PRF-19500/560E
6.6 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where
changes from the previous amendment were made. This was done as a convenience only and the Government
assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to
evaluate the requirements of this document based on the entire content irrespective of the marginal notations and
relationship to the last previous amendment.
Custodians:
Army - CR
Air Force 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2531)
Review activities:
Air Force – 19, 71, 99
19
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/560E
2. DOCUMENT DATE
6 March 2002
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N5339 AND 2N5339U3 JAN, JANTX,
JANTXV, JANS, JANHC AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center, Columbus
ATTN: DSCC-VAC, P.O. Box 3990
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99