Visible Light Emitting Diodes (Red) LNA4501F (LN124W) ø4.8±0.2 ø4.4±0.2 For optical fiber communications and control systems Features Unit : mm 4.4±0.3 Red light emission close to monochromatic light : λP = 680 nm 5.0±0.2 C0.2 Not soldered 2.0 max. GaAlAs Red Light Emitting Diode High coupling characteristics and suits to a plastic fiber High-speed response : –3dB modulation of 10 MHz 2-1.0±0.1 1.0 12.5±1.0 High-power output, high-efficiency : PO = 3 mW 2- 0.6±0.15 Flat resin package : ø 4.8 mm ø5.4±0.2 (1.5) 2.54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation * Symbol Ratings Unit PD 120 mW Forward current (DC) IF 40 mA Pulse forward current IFP* 200 mA Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 2 1 1: Cathode 2: Anode tw = 10 µs, Duty cycle = 10 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min Radiant power PO IF = 20mA Peak emission wavelength λP IF = 20mA Spectral half band width ∆λ IF = 20mA 20 Forward voltage (DC) VF IF = 20mA 1.8 IR VR = 3V Reverse current (DC) Response time Half-power angle tr , t f θ 1 typ max Unit 3 mW 680 nm nm 2.6 V 100 µA IFP = 100mA 30 ns The angle in which radiant intencity is 50% 30 deg. Note : Before using this product, be sure provide and/or receive approvals regarding individual specifications. Note) The part number in the parenthesis shows conventional part number. 1 LNA4501F Visible Light Emitting Diodes (Red) IF — Ta IFP — VF 10 3 30 20 10 0 20 40 60 80 2 10 1 100 1.6 Ambient temperature Ta (˚C ) 1.8 2.0 2.2 10 2 10 1 10 – 40 10 2 10 40 80 60 40 20 0 620 80 640 660 680 720 Coupling loss characteristics Coupling loss characteristics 0 0 70˚ 80˚ 90˚ 1 Coupling loss LZ (dB) 60˚ 1 2 3 Fiber Y 4 Z = 0.3mm 2 3 5 0 0.4 0.8 Fiber Y 4 Z Z X X 1.2 Distance Z (mm) 2 700 Wavelength λ (nm) Z = 0mm Relative radiant intensity (%) 20 IF = 20mA X,Y = 0mm 50˚ 80 40 30˚ 40˚ 100 60 20˚ 10 3 100 Ambient temperature Ta (˚C ) Directivity characteristics 10˚ 0 10 2 10 Spectral characteristics 10 2 Duty cycle (%) 0˚ 1 Forward current IF (mA) Relative radiant intensity (%) Relative radiant power ∆PO IFP (mA) Pulse forward current 10 3 1 10 2.4 IF = 20mA Ta = 25˚C 10 –1 10 2 ∆PO — Ta 10 3 10 –1 10 –2 10 3 Ta = 25˚C Forward voltage VF (V) IFP — Duty cycle 10 4 10 4 Coupling loss LX, LY (dB) 0 – 20 10 tw = 10µs Duty Cycle = 10% Ta = 25˚C PO (µW) 40 P O — IF 10 5 Radiant power IFP (mA) 50 Pulse forward current Allowable forward current IF (mA) 60 1.6 5 – 0.8 – 0.4 0 0.4 Distance X, Y (mm) 0.8 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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