PIN Photodiodes PNZ331CL (PN331CL) Unit : mm 1. 0± 0. 1 For optical fiber communication systems 1 0. 0± 1. ø5.4±0.1 ø4.2±0.05 PIN Photodiode 3.25±0.3 Features TO-18 standard type package 14.2±0.5 2.25±0.1 (0.2) High coupling capability suitable for plastic fiber High quantum efficiency 3-ø0.45±0.04 45± 3˚ ø2.54±0.25 High-speed response 2 3 1 1: Anode 2: Case 3: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Reverse voltage (DC) VR 30 V Power dissipation PD 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Dimensions of detection area Unit : mm 1.1 0.88 Active region A1 ø0.1 Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions Dark current ID VR = 10V Photo current IL VR = 10V, L = 1000 lx*1 λP VR = 10V Peak sensitivity wavelength tr, tf*2 Response time min 7 VR = 10V, RL = 50Ω Capacitance between pins Ct VR = 10V Photodetection sensitivity R VR = 10V, λ = 800nm typ max 0.1 10 Unit nA 14 µA 900 nm 2 ns 3 pF 0.55 A/W Acceptance half angle θ Measured from the optical axis to the half power point 70 deg. Photodetection surface shape D Effective detection area 0.88 mm Note 1) Spectral sensitivity: Sensitivity at wavelengths exceeding 400 nm as a percentage of maximum sensitivity is 100% Note 2) This product is not designed to withstand electromagnetic radiation or heavy-charge particles. Note 3) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D) *1 *2 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit (see figure below) Sig.IN VR = 10V (Input pulse) λP = 800nm Sig.OUT ;;;; ;;;; (Output pulse) 50Ω 90% 10% RL td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 PIN Photodiodes PNZ331CL PD — Ta IL — L 10 2 60 VR = 10V Ta = 25˚C T = 2856K 30 20 VR = 10V Ta = 25˚C λ = 800nm IL (µA) 10 Photo current IL (µA) Photo current Power dissipation PD (mW) 50 40 IL — P 10 2 1 10 –1 10 1 10 –1 10 0 – 25 0 20 40 60 80 10 –2 10 100 10 2 Ambient temperature Ta (˚C ) 10 3 Illuminance L (lx) Ta = 25˚C VR = 10V λ = 800nm R (%) 10 Photodetection sensitivity ID (nA) Dark current Dark current ID (nA) 10 2 1 10 –1 10 –2 24 10 –3 – 40 – 20 32 Reverse voltage VR (V) 80 40 20 40 60 80 Ambient temperature Ta (˚C ) 2 R (%) 100 Relative photodetection sensitivity IL (%) Relative photo current 120 0 40 60 80 80 40 0 – 40 – 20 100 100 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Frequency characteristics Spectral sensitivity characteristics VR = 10V L = 1000 lx T = 2856K 0 – 40 – 20 20 120 Ambient temperature Ta (˚C ) IL — Ta 160 0 6 VR = 10V Ta = 25˚C 4 P (dB) 16 80 Relative power output 8 10 4 160 VR = 10V 10 –1 10 3 R — Ta 10 3 0 10 2 Incident photo power P (µW) ID — Ta ID — V R 1 10 –2 10 –2 10 10 4 60 40 20 2 0 –2 –4 –6 –8 0 200 400 600 800 1000 Wavelength λ (nm) 1200 – 10 1 10 10 2 Frequency f (MHz) 10 3 PNZ331CL PIN Photodiodes Coupling loss characteristics Ct — VR f = 1MHz Ta = 25˚C 0 10 –1 1 1 Z = 0.3mm 2 3 X 1 10 VR (V) 10 2 Fiber Y 4 5 – 0.8 – 0.4 0 0.4 2 3 Fiber Y 4 Z ø1mm Distance X, Y (mm) Coupling loss LZ (dB) 1 Reverse voltage X,Y = 0mm Z = 0mm 10 10 –2 10 –1 LZ — Z 0 Coupling loss LX , LY (dB) Capacitance between pins Ct (pF) 10 2 Coupling loss characteristics LX , LY — X, Y Z ø1mm X 0.8 5 0 0.4 0.8 1.2 1.6 Distance Z (mm) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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