Switching Diodes MA2C196 (MA196) Silicon epitaxial planar type Unit : mm For switching circuits φ 0.45 max. COLORED BAND INDICATES CATHODE Unit VR 50 V Repetitive peak reverse voltage VRRM 50 V Average forward current IF(AV) 100 mA Repetitive peak forward current IFRM 225 mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C 13 min. Rating 0.2 max. Forward voltage (DC) Symbol 2.2 ± 0.3 1st Band 2nd Band ■ Absolute Maximum Ratings Ta = 25°C Parameter 13 min. • Low forward dynamic resistance rf • Small terminal capacitance, Ct 1 0.2 max. ■ Features 2 φ 1.75 max. 1 : Cathode 2 : Anode JEDEC : DO-34 Note) * : t = l s ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol Conditions Min Typ Max Unit 5 nA IR1 VR = 15 V IR2 VR = 50 V 10 nA IR3 VR = 50 V, Ta = 150°C 100 µA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 4 pF Forward dynamic resistance rf1 IF = 3 mA, f = 30 MHz 2.5 Ω rf2 IF = 3 mA, f = 30 MHz 3.6 Ω trr IF = 10 mA, VR = 1 V Irr = 0.1 · IR, RL = 100 Ω 0.2 ms Reverse recovery time* Note) 1. Rated input/output frequency: 2.5 kHz 2. * : trr measuring circuit 50 Bias Application Unit N-50BU V Input Pulse tp tr 10% A VR ■ Cathode Indication Type No. Color MA2C196 1st Band Green 2nd Band Green Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. 201 MA2C196 Switching Diodes VF Ta 0.8 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 IF = 10 mA 3 mA 0.6 1 mA 0.4 0.1 mA 0 −40 1.2 40 Ct VR Forward dynamic resistance rf (Ω) Terminal capacitance Ct (pF) 120 5 4 3 2 1 0 10 20 30 40 160 50 60 f = 30 MHz 10 1 0.1 0.01 0.1 10 100°C 1 0.3 1 3 10 30 Forward current IF (mA) 25°C 0 10 20 30 40 Reverse voltage VR (V) r f IF Reverse voltage VR (V) 202 80 100 f = 1 MHz Ta = 25°C Ta = 150°C 10−2 0 Ambient temperature Ta (°C) 6 102 10−1 0.2 Forward voltage VF (V) 0 IR V R 103 Reverse current IR (µA) 102 VF (V) 1.0 Forward voltage Forward current IF (mA) IF VF 103 100 50 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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