NLAS4599 Low Voltage Single Supply SPDT Analog Switch The NLAS4599 is an advanced high speed CMOS single pole – double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This switch controls analog and digital voltages that may vary across the full power–supply range (from VCC to GND). The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical CMOS analog switches. The channel select input is compatible with standard CMOS outputs. The channel select input structure provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage – input/output voltage mismatch, battery backup, hot insertion, etc. • • • • • • • • • Channel Select Input Over–Voltage Tolerant to 5.5 V Fast Switching and Propagation Speeds Break–Before–Make Circuitry Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C Diode Protection Provided on Channel Select Input Improved Linearity and Lower ON Resistance over Input Voltage Latch–up Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; MM > 200 V Chip Complexity: 38 FETs http://onsemi.com MARKING DIAGRAMS SOT–23/TSOP–6/SC–59 DT SUFFIX CASE 318G SC–70/SC–88/SOT–363 DF SUFFIX CASE 419B AOd 1 AOd 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section of this data sheet. SELECT 1 6 NO V+ 2 5 COM GND 3 4 NC FUNCTION TABLE Figure 1. Pin Assignment 2X1 U COM U 2X0 U CHANNEL SELECT Select ON Channel L H NC NO NO NC Figure 2. Logic Symbol Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 5 1 Publication Order Number: NLAS4599/D NLAS4599 ABSOLUTE MAXIMUM RATINGS (Note 1.) Maximum ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute– maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. Symbol Parameter Value Unit –0.5 to +7.0 V –0.5 ≤ VIS ≤ VCC 0.5 V –0.5 ≤ VI ≤ + 7.0 V 50 mA 200 200 mW VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO or VCOM) VIN Digital Select Input Voltage IIK DC Current, Into or Out of Any Pin PD Power Dissipation in Still Air TSTG Storage Temperature Range –65 to +150 °C TL Lead Temperature, 1mm from Case for 10 seconds 260 °C TJ Junction Temperature Under Bias 150 °C VESD ESD Withstand Voltage Human Body Model (Note 2.) Machine Model (Note 3.) Charged Device Model (Note 4.) 2000 200 N/A V ILATCH–UP Latch–Up Performance Above VCC and Below GND at 125°C (Note 5.) 300 mA JA Thermal Resistance 333 333 °C/W SC–88 TSOP6 SC–88 TSOP6 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Characteristics Min Max Unit 2.0 5.5 V Digital Select Input Voltage GND 5.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range –55 +125 °C tr, tf Input Rise or Fall Time, SELECT 0 0 100 20 ns/V VCC = 3.3 V + 0.3 V VCC = 5.0 V + 0.5 V 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C Time, Years TJ = 90°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 100°C Junction Temperature C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES TJ = 110°C VIN TJ = 120°C DC Supply Voltage TJ = 130°C Symbol VCC 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAS4599 DC CHARACTERISTICS – Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Condition VCC –55 to 25C <85C <125C Unit VIH Minimum High–Level Input Voltage, Select Inputs 2.0 2.5 3.0 4.5 5.5 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 V VIL Maximum Low–Level Input Voltage, Select Inputs 2.0 2.5 3.0 4.5 5.5 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 V IIN Maximum Input Leakage Current, Select Inputs VIN = 5.5 V or GND 0 V to 5.5 V +0.1 +1.0 +1.0 µA ICC Maximum Quiescent Supply Current Select and VIS = VCC or GND 5.5 1.0 1.0 2.0 µA DC ELECTRICAL CHARACTERISTICS – Analog Section Guaranteed Limit Symbol Parameter Condition VCC –55 to 25C <85C <125C Unit RON Maximum “ON” Resistance (Figures 17 – 23) VIN = VIL or VIH VIS = GND to VCC IINI < 10.0 mA 2.5 3.0 4.5 5.5 85 45 30 25 95 50 35 30 105 55 40 35 RFLAT ON Resistance Flatness (Figures 17 – 23) VIN = VIL or VIH IINI < 10.0 mA VIS = 1V, 2V, 3.5V 4.5 4 4 5 ON Resistance Match Between Channels VIN = VIL or VIH IINI < 10.0 mA VNO or VNC = 3.5 V 4.5 2 2 3 (ON) INC(OFF) INO(OFF) NO or NC Off Leakage Current (Figure 9) VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V 5.5 1 10 100 nA ICOM(ON) COM ON Leakage Current (Figure 9) VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA (ON) RON http://onsemi.com 3 NLAS4599 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit Symbol Parameter VCC VIS –55 to 25C <85C <125C Test Conditions (V) (V) Min Typ* Max Min Max Min Max Unit tON Turn–On Time (Figures 12 and 13) RL = 300 CL = 35 pF (Figures 5 and 6) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 5 5 2 2 23 16 11 9 28 21 16 14 5 5 2 2 30 25 20 20 5 5 2 2 30 25 20 20 ns tOFF Turn–Off Time (Figures 12 and 13) RL = 300 CL = 35 pF (Figures 5 and 6) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 7 5 4 3 12 10 9 8 1 1 1 1 15 15 12 12 1 1 1 1 15 15 12 12 ns tBBM Minimum Break–Before–Make Break Before Make Time VIS = 3.0 V (Figure 4) RL = 300 CL = 35 pF F 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 12 11 6 5 1 1 1 1 1 1 1 1 ns *Typical Characteristics are at 25C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 10 10 20 pF ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition VCC Typical V 25°C Unit BW Maximum On–Channel –3dB Bandwidth or Minimum Frequency Response (Figure 10) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) 3.0 3 0 45 4.5 55 5.5 170 200 200 MHz VONL Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 –2 2 –2 2 –2 dB VISO Off Channel Isolation Off–Channel (Figure 10) f = 100 kHz kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 –93 93 –93 93 –93 dB Q Charge Injection Select Input In ut to Common I/O ((Figure g 15)) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * ∆VOUT (Figure 8) 3.0 5.5 1.5 3.0 pC C Total Harmonic Distortion THD + Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 5.0 VPP sine wave 5.5 0.1 % THD http://onsemi.com 4 NLAS4599 VCC DUT VCC Input Output GND VOUT 0.1 F 300 Ω tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 4. tBBM (Time Break–Before–Make) VCC DUT VCC 0.1 F Input Output 50% VOUT Open 50% 0V 300 Ω VOH 35 pF 90% 90% Output VOL Input tON tOFF Figure 5. tON/tOFF VCC VCC Input DUT Output 300 Ω 50% VOUT Open 50% 0V VOH 35 pF Output Input tOFF Figure 6. tON/tOFF http://onsemi.com 5 10% 10% VOL tON NLAS4599 50 Ω DUT Reference Transmitted Input Output 50 Ω Generator 50 Ω Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VVOUT for VIN at 100 kHz IN VOUT for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off On VIN Figure 8. Charge Injection: (Q) 100 LEAKAGE (nA) 10 1 ICOM(ON) 0.1 ICOM(OFF) 0.01 VCC = 5.0 V INO(OFF) 0.001 –55 –20 25 70 85 TEMPERATURE (°C) Figure 9. Switch Leakage vs. Temperature http://onsemi.com 6 125 Off ∆VOUT NLAS4599 0 Bandwidth (ON–RESPONSE) 0 –40 PHASE (Degree) –20 (dB) Off Isolation –60 10 20 30 VCC = 5.0 V TA = 25C –80 –100 0.01 0.1 1 10 FREQUENCY (MHz) VCC = 5.0 V TA = 25C 0.01 100 200 Figure 10. Bandwidth and Off–Channel Isolation 0.1 100 200 1 10 FREQUENCY (MHz) Figure 11. Phase vs. Frequency 30 30 25 25 20 20 TIME (ns) TIME (ns) VCC = 4.5 V 15 tON (ns) 10 tOFF (ns) 5 0 2.5 3 3.5 4 4.5 10 tON 5 tOFF 0 –55 5 –40 85 25 125 VCC (VOLTS) Temperature (°C) Figure 12. tON and tOFF vs. VCC at 25C Figure 13. tON and tOFF vs. Temp 1 3.0 VINpp = 3.0 V VCC = 3.6 V 2.5 2.0 Q (pC) THD + NOISE (%) 15 0.1 VINpp = 5.0 V VCC = 5.5 V VCC = 5 V 1.5 1.0 0.5 VCC = 3 V 0 –0.5 0.01 1 10 100 0 1 2 3 4 FREQUENCY (kHz) VCOM (V) Figure 14. Total Harmonic Distortion Plus Noise vs. Frequency Figure 15. Charge Injection vs. COM Voltage http://onsemi.com 7 5 NLAS4599 100 100 VCC = 2.0 V 10 80 RON (Ω) ICC (nA) 1 0.1 0.01 60 VCC = 2.5 V 40 VCC = 3.0 V 0.001 VCC = 3.0 V VCC = 4.0 V 20 0.0001 VCC = 5.0 V 0.00001 –40 –20 0 20 60 VCC = 5.5 V 80 100 0 0.0 120 3.0 4.0 5.0 VIS (VDC) Figure 16. ICC vs. Temp, VCC = 3 V & 5 V Figure 17. RON vs. VCC, Temp = 25C 90 90 80 80 70 70 60 60 RON (Ω) 100 RON (Ω) 2.0 Temperature (°C) 100 50 40 125°C 30 20 40 25°C –55°C 10 85°C 0.5 50 20 –55°C 10 6.0 30 25°C 0 0.0 1.0 1.0 1.5 2.0 0 0.0 2.5 85°C 125°C 0.5 1.0 1.5 VIS (VDC) 2.0 2.5 3.0 VIS (VDC) Figure 18. RON vs Temp, VCC = 2.0 V Figure 19. RON vs. Temp, VCC = 2.5 V 50 30 45 25 40 20 30 RON (Ω) RON (Ω) 35 25 20 125°C 10 15 0 0.0 25°C 85°C 10 5 15 5 25°C 85°C 125°C –55°C –55°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VIS (VDC) VIS (VDC) Figure 21. RON vs. Temp, VCC = 4.5 V Figure 20. RON vs. Temp, VCC = 3.0 V http://onsemi.com 8 4.5 NLAS4599 25 25 125°C 20 20 RON (Ω) RON (Ω) 125°C 15 25°C 10 –55°C 85°C 15 25°C 10 85°C 5 0 0.0 –55°C 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.0 VIS (VDC) VIS (VDC) Figure 22. RON vs. Temp, VCC = 5.0 V Figure 23. RON vs. Temp, VCC = 5.5 V DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Technology Device Function Package Suffix Tape & Reel Suffix Package Type (Name/SOT#/ Common Name) Tape and Reel Size NL AS 4599 DF T2 SC–70 / SC–88 / SOT–363 178 mm (7”) 3000 Unit NL AS 4599 DT T1 SOT–23 / TSOP–6 / SC–59 178 mm (7”) 3000 Unit Circuit Indicator NLAS4599DFT2 NLAS4599DTT1 http://onsemi.com 9 NLAS4599 10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 mm (±0.008”) P0 K P2 D t TOP COVER TAPE E A0 SEE NOTE 2. + K0 SEE NOTE 2. B1 B0 + F W + D1 FOR COMPONENTS P 2.0 mm × 1.2 mm AND LARGER EMBOSSMENT CENTER LINES OF CAVITY USER DIRECTION OF FEED FOR MACHINE REFERENCE ONLY INCLUDING DRAFT AND RADII CONCENTRIC AROUND B0 *TOP COVER TAPE THICKNESS (t1) 0.10 mm (0.004”) MAX. R MIN. BENDING RADIUS 10 ° TAPE AND COMPONENTS SHALL PASS AROUND RADIUS “R” WITHOUT DAMAGE EMBOSSED CARRIER 100 mm (3.937”) MAXIMUM COMPONENT ROTATION EMBOSSMENT 1 mm MAX TYPICAL COMPONENT CAVITY CENTER LINE TAPE 1 mm 250 mm (0.039”) MAX (9.843”) TYPICAL COMPONENT CENTER LINE CAMBER (TOP VIEW) ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm Figure 24. Carrier Tape Specifications EMBOSSED CARRIER DIMENSIONS (See Notes 1. and 2.) Tape Size B1 Max 8 mm 4.35 mm (0.171 (0.171”)) D D1 E F K P P0 P2 R T W 1.5 +0.1/ –0.0 mm (0.059 +0.004/ –0.0”) 1.0 mm Min (0.039”)) (0.039 1.75 +0.1 mm (0.069 +0.004”)) +0.004 3.5 +0.5 mm (1.38 +0.002”)) +0.002 2.4 mm (0.094 ) (0.094”) 4.0 +0.10 mm (0.157 +0.004”)) +0.004 4.0 +0.1 mm (0.156 +0.004”)) +0.004 2.0 +0.1 mm (0.079 +0.002”)) +0.002 25 mm (0.98 (0.98”)) 0.3 +0.05 mm (0.01 +0.0038/ –0.0002”) 8.0 +0.3 mm (0.315 +0.012”)) +0.012 1. Metric Dimensions Govern–English are in parentheses for reference only. 2. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to 0.50 mm max. The component cannot rotate more than 10° within the determined cavity. http://onsemi.com 10 NLAS4599 t MAX 1.5 mm MIN (0.06”) A 13.0 mm ±0.2 mm (0.512” ±0.008”) 50 mm MIN (1.969”) 20.2 mm MIN (0.795”) FULL RADIUS G Figure 25. Reel Dimensions REEL DIMENSIONS Tape Size T&R Suffix A Max G t Max 8 mm T1, T2 178 mm 8.4 mm, +1.5 mm, –0.0 14.4 mm (7”) (0.33” + 0.059”, –0.0) (0.56”) DIRECTION OF FEED BARCODE LABEL POCKET Figure 26. Reel Winding Direction http://onsemi.com 11 HOLE NLAS4599 CAVITY TOP TAPE TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN COMPONENTS TAPE LEADER NO COMPONENTS 400 mm MIN DIRECTION OF FEED Figure 27. Tape Ends for Finished Goods “T2” PIN ONE AWAY FROM SPROCKET HOLE User Direction of Feed Figure 28. DFT2 and DFT4 (SC88) Reel Configuration/Orientation “T1” PIN ONE AWAY FROM SPROCKET HOLE User Direction of Feed Figure 29. DTT1 and DTT3 (TSOP6) Reel Configuration/Orientation http://onsemi.com 12 NLAS4599 PACKAGE DIMENSIONS SOT–23/TSOP–6/SC–59 DT SUFFIX CASE 318G–02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 6 S 1 5 4 2 3 B DIM A B C D G H J K L M S D G M J C 0.05 (0.002) K H ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.037 0.95 0.074 1.9 0.037 0.95 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.094 2.4 0.039 1.0 http://onsemi.com 13 0.028 0.7 inches mm MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0 10 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0 10 0.0985 0.1181 NLAS4599 SC–70/SC–88/SOT–363 DF SUFFIX CASE 419B–01 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM A B C D G H J K N S V G V 6 5 4 –B– S 1 2 3 D 6 PL 0.2 (0.008) M B M N J C 0.4 mm (min) 0.5 mm (min) ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 1.9 mm ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ http://onsemi.com 14 0.65 mm 0.65 mm K H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 NLAS4599 Notes http://onsemi.com 15 NLAS4599 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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