NLAS44599 Low Voltage Single Supply Dual DPDT Analog Switch The NLAS44599 is an advanced dual–independent CMOS double pole–double throw (DPDT) analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation. This DPDT controls analog and digital voltages that may vary across the full power–supply range (from VCC to GND). The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than R ON of typical CMOS analog switches. The channel select input is compatible with standard CMOS outputs. The channel select input structure provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage – input/output voltage mismatch, battery backup, hot insertion, etc. The NLAS44599 can also be used as a quad 2–to–1 multiplexer–demultiplexer analog switch with two Select pins that each controls two multiplexer–demultiplexers. • • • • • • • • • http://onsemi.com MARKING DIAGRAMS 1 16 16 C 1 ALYW QFN–16 MN SUFFIX CASE 485G 16 Channel Select Input Over–Voltage Tolerant to 5.5 V 16 Fast Switching and Propagation Speeds NLAS 44599 AWLYWW 1 Break–Before–Make Circuitry TSSOP–16 DT SUFFIX CASE 948F Low Power Dissipation: ICC = 2 A (Max) at TA = 25C 9 1 8 Diode Protection Provided on Channel Select Input Improved Linearity and Lower ON Resistance over Input Voltage Latch–up Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; MM > 200 V A L, WL Y W, WW Chip Complexity: 158 FETs = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 2 1 Publication Order Number: NLAS44599/D NLAS44599 COM A NO A0 VCC NC D1 14 13 FUNCTION TABLE COM D NO D0 10 SCD 9 1 15 11 SAB 16 12 NC A1 2 QFN–16 PACKAGE NC C1 Select XY ON Channel L H NC X1 NO X0 0/1 2/3 3 U X1 0 U 1 U NC B1 GND NO C0 COM C 4 COM A 2 15 NC D1 SELECT CD COM C 0/1 2 3 14 COM D SELECT AB 4 13 NO D0 NO B0 5 12 SELECT CD COM B 6 11 NC C1 NC B1 7 10 COM C GND 8 9 NO C0 Figure 1. Logic Diagrams http://onsemi.com 2 COM D U NC A1 2/3 3 U VCC U 16 U 1 U NO A0 1 2 TSSOP–16 PACKAGE COM B 0 U U COM A X1 U SELECT AB U 5 6 7 COM B 8 NO B0 3 See TSSOP–16 Switch Configuration Figure 2. IEC Logic Symbol NO A0 NC A1 NO B0 NC B1 NO C0 NC C1 NO D0 NC D1 NLAS44599 MAXIMUM RATINGS Symbol Parameter VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO or VCOM) VIN Digital Select Input Voltage IIK DC Current, Into or Out of Any Pin PD Power Dissipation in Still Air TSTG Storage Temperature Range TL Value Unit 0.5 to 7.0 V 0.5 VIS VCC 0.5 0.5 VI 7.0 V 50 mA 450 mW 65 to 150 C Lead Temperature, 1 mm from Case for 10 Seconds 260 C TJ Junction Temperature Under Bias 150 C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) 2000 200 1000 V ILatch–Up Latch–Up Performance Above VCC and Below GND at 125C (Note 4) 300 mA JA Thermal Resistance 164 C/W TSSOP–16 Level 1 Oxygen Index: 30% – 35% UL–94–VO (0.125 in) TSSOP–16 Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 1. Tested to EIA/JESD22–A114–A. 2. Tested to EIA/JESD22–A115–A. 3. Tested to JESD22–C101–A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 2.0 5.5 V VCC DC Supply Voltage VIN Digital Select Input Voltage GND 5.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range 55 125 C tr, tf Input Rise or Fall Time, SELECT 0 0 100 20 ns/V VCC = 3.3 V 0.3 V VCC = 5.0 V 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80C 117.8 TJ = 90C 1,032,200 TJ = 100C 80 TJ = 110C Time, Years TJ = 120C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 3 NLAS44599 DC CHARACTERISTICS – Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VIH VIL Parameter Condition Minimum High–Level Input Voltage, Select Inputs Maximum Low–Level Input Voltage, Select Inputs IIN Maximum Input Leakage Current, Select Inputs VIN = 5.5 V or GND ICC Maximum Quiescent Supply Current Select and VIS = VCC or GND VCC 55C to 25C 85C 125C Unit 2.0 1.5 1.5 1.5 V 2.5 1.9 1.9 1.9 3.0 2.1 2.1 2.1 4.5 3.15 3.15 3.15 5.5 3.85 3.85 3.85 2.0 0.5 0.5 0.5 2.5 0.6 0.6 0.6 V 3.0 0.9 0.9 0.9 4.5 1.35 1.35 1.35 5.5 1.65 1.65 1.65 0 V to 5.5 V 0.2 2.0 2.0 A 5.5 4.0 4.0 8.0 A DC ELECTRICAL CHARACTERISTICS – Analog Section Guaranteed Limit Symbol RON Parameter Maximum “ON” Resistance (Figures 17 – 23) Condition VIN = VIL or VIH VIS = GND to VCC IINI 10.0 mA VCC 55C to 25C 85C 125C Unit 2.5 85 95 105 3.0 45 50 55 4.5 30 35 40 5.5 25 30 35 RFLAT (ON) ON Resistance Flatness (Figures 17 – 23) VIN = VIL or VIH IINI 10.0 mA VIS = 1 V, 2 V, 3.5 V 4.5 4 4 5 INC(OFF) INO(OFF) NO or NC Off Leakage Current (Figure 9) VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V 5.5 1 10 100 nA ICOM(ON) COM ON Leakage Current (Figure 9) VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA http://onsemi.com 4 NLAS44599 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol tON tOFF tBBM Parameter Turn–On Time (Figures 12 and 13) Turn–Off Time (Figures 12 and 13) Minimum Break–Before–Make Time 55C to 25C 85C 125C VCC VIS Test Conditions (V) (V) Min Typ* Max Min Max Min Max Unit RL = 300 CL = 35 pF (Figures 5 and 6) 2.5 2.0 5 23 35 5 38 5 41 ns 3.0 2.0 5 16 24 5 27 5 30 4.5 3.0 2 11 16 2 19 2 22 5.5 3.0 2 9 14 2 17 2 20 2.5 2.0 1 7 12 1 15 1 18 3.0 2.0 1 5 10 1 13 1 16 4.5 3.0 1 4 6 1 9 1 12 5.5 3.0 1 3 5 1 8 1 11 2.5 2.0 1 12 1 1 3.0 2.0 1 11 1 1 4.5 3.0 1 6 1 1 5.5 3.0 1 5 1 1 RL = 300 CL = 35 pF (Figures 5 and 6) VIS = 3.0 V (Figure 4) RL = 300 CL = 35 pF ns ns *Typical Characteristics are at 25C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) 8 pF 10 10 20 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol BW VONL VISO Q THD VCT Parameter Condition VCC Typical V 25°C Unit MHz Maximum On–Channel –3dB Bandwidth or Minimum Frequency Response (Figure 11) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) 3.0 145 4.5 170 5.5 175 Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) 3.0 2 4.5 2 5.5 2 f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) 3.0 93 4.5 93 5.5 93 3.0 1.5 5.5 3.0 5.5 0.1 5.5 90 3.0 90 Off–Channel Isolation (Figure 10) Charge Injection Select Input to Common I/O (Figure 15) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figure 8) Total Harmonic Distortion THD + Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 5.0 VPP sine wave Channel–to–Channel Crosstalk f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) http://onsemi.com 5 dB dB pC % dB NLAS44599 VCC DUT VCC Input Output GND VOUT 0.1 F 300 Ω tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 4. tBBM (Time Break–Before–Make) VCC Input DUT VCC 0.1 F 50% Output VOUT Open 50% 0V 300 Ω VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 5. tON/tOFF VCC VCC Input DUT Output 300 Ω 50% VOUT Open 50% 0V VOH 35 pF Output 10% VOL Input tOFF Figure 6. tON/tOFF http://onsemi.com 6 10% tON NLAS44599 50 Ω DUT Reference Transmitted Input Output 50 Ω Generator 50 Ω Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VVOUT for VIN at 100 kHz IN VOUT for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off On VIN Figure 8. Charge Injection: (Q) 100 LEAKAGE (nA) 10 1 ICOM(ON) 0.1 ICOM(OFF) 0.01 VCC = 5.0 V INO(OFF) 0.001 –55 –20 25 70 85 TEMPERATURE (°C) Figure 9. Switch Leakage vs. Temperature http://onsemi.com 7 125 Off ∆VOUT NLAS44599 +15 0 1.0 2.0 –20 +10 Bandwidth (ON–RESPONSE) +5 3.0 0 PHASE SHIFT 4.0 –40 (dB) (dB) Off Isolation –60 VCC = 5.0 V TA = 25C –80 –100 0.01 0.1 –10 6.0 –15 7.0 –20 8.0 –25 9.0 10.0 0.01 100 200 1 10 FREQUENCY (MHz) –5 5.0 PHASE (°) 0 VCC = 5.0 V TA = 25°C –30 0.1 1 –35 100 300 10 FREQUENCY (MHz) Figure 10. Off–Channel Isolation Figure 11. Typical Bandwidth and Phase Shift 30 30 25 25 20 20 TIME (ns) TIME (ns) VCC = 4.5 V 15 tON (ns) 10 tOFF (ns) 5 0 2.5 3 3.5 4 4.5 10 tON 5 tOFF 0 –55 5 –40 25 85 125 VCC (VOLTS) Temperature (°C) Figure 12. tON and tOFF vs. VCC at 25C Figure 13. tON and tOFF vs. Temp 1 3.0 VINpp = 3.0 V VCC = 3.6 V 2.5 2.0 Q (pC) THD + NOISE (%) 15 0.1 VINpp = 5.0 V VCC = 5.5 V VCC = 5 V 1.5 1.0 0.5 VCC = 3 V 0 –0.5 0.01 1 10 100 0 1 2 3 4 FREQUENCY (kHz) VCOM (V) Figure 14. Total Harmonic Distortion Plus Noise vs. Frequency Figure 15. Charge Injection vs. COM Voltage http://onsemi.com 8 5 NLAS44599 100 100 VCC = 2.0 V 10 80 RON (Ω) 1 ICC (nA) 0.1 0.01 60 VCC = 2.5 V 40 VCC = 3.0 V 0.001 VCC = 3.0 V VCC = 4.0 V 20 0.0001 VCC = 5.0 V 0.00001 –40 –20 0 20 60 VCC = 5.5 V 80 100 0 0.0 120 3.0 4.0 5.0 VIS (VDC) Figure 16. ICC vs. Temp, VCC = 3 V & 5 V Figure 17. RON vs. VCC, Temp = 25C 90 90 80 80 70 70 60 60 RON (Ω) 100 RON (Ω) 2.0 Temperature (°C) 100 50 40 125°C 30 40 25°C –55°C 10 85°C 0.5 50 20 –55°C 10 6.0 30 25°C 20 0 0.0 1.0 1.0 1.5 2.0 0 0.0 2.5 85°C 125°C 0.5 1.0 1.5 VIS (VDC) 2.0 2.5 3.0 VIS (VDC) Figure 18. RON vs Temp, VCC = 2.0 V Figure 19. RON vs. Temp, VCC = 2.5 V 30 50 45 25 40 20 30 RON (Ω) RON (Ω) 35 25 20 125°C 10 15 0 0.0 25°C 85°C 10 5 15 5 25°C 85°C 125°C –55°C –55°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VIS (VDC) VIS (VDC) Figure 21. RON vs. Temp, VCC = 4.5 V Figure 20. RON vs. Temp, VCC = 3.0 V http://onsemi.com 9 4.5 NLAS44599 25 25 125°C 20 20 RON (Ω) RON (Ω) 125°C 15 25°C 10 –55°C 85°C 25°C 10 –55°C 85°C 5 0 0.0 15 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.0 VIS (VDC) VIS (VDC) Figure 22. RON vs. Temp, VCC = 5.0 V Figure 23. RON vs. Temp, VCC = 5.5 V DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Circuit Indicator Technology Device Function Package Suffix Tape & Reel Suffix Package Type Tape & Reel Size NLAS44599MNR2 NL AS 44599 MN R2 QFN 7–inch/2500 Unit NLAS44599DTR2 NL AS 44599 DT R2 TSSOP 13–inch/2500 Unit PIN1/PRODUCT ORIENTATION CARRIER TAPE USER DIRECTION OF FEED Figure 24. http://onsemi.com 10 NLAS44599 PACKAGE DIMENSIONS QFN–16 MN SUFFIX CASE 485G–01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. –X– A M –Y– DIM A B C D E F G H J K L M N P R B N 0.25 (0.010) T 0.25 (0.010) T J R C 0.08 (0.003) T –T– K SEATING PLANE E H G L 5 8 4 9 F 12 1 16 13 P D NOTE 3 0.10 (0.004) M T X Y http://onsemi.com 11 MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.23 0.28 1.75 1.85 1.75 1.85 0.50 BSC 0.875 0.925 0.20 REF 0.00 0.05 0.35 0.45 1.50 BSC 1.50 BSC 0.875 0.925 0.60 0.80 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.009 0.011 0.069 0.073 0.069 0.073 0.020 BSC 0.034 0.036 0.008 REF 0.000 0.002 0.014 0.018 0.059 BSC 0.059 BSC 0.034 0.036 0.024 0.031 NLAS44599 PACKAGE DIMENSIONS TSSOP–16 DT SUFFIX CASE 948F–01 ISSUE O 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S K ÎÎÎ ÏÏ ÎÎÎ ÏÏ K1 2X L/2 16 9 J1 B –U– L SECTION N–N J PIN 1 IDENT. 8 1 N 0.15 (0.006) T U S 0.25 (0.010) A –V– M N F DETAIL E –W– C 0.10 (0.004) –T– SEATING PLANE H D DETAIL E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 --1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0 8 INCHES MIN MAX 0.193 0.200 0.169 0.177 --0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0 8 G ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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