DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV70S High-speed double diode array Product specification Supersedes data of 1997 Aug 27 File under Discrete Semiconductors, SC01 1997 Oct 21 Philips Semiconductors Product specification High-speed double diode array FEATURES BAV70S PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns 1 anode (a1) • Continuous reverse voltage: max. 75 V 2 anode (a2) • Repetitive peak reverse voltage: max. 85 V 3 common cathode (k1) 4 anode (a3) 5 anode (a4) 6 common cathode (k2) • Repetitive peak forward current: max. 450 mA. APPLICATIONS 6 5 • General purpose switching in e.g. surface mounted circuits. 4 handbook, halfpage 6 5 4 1 2 3 DESCRIPTION The BAV70S consists of two dual high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. 1 2 Top view 3 MGL160 MSA370 Marking code: A4t. Fig.1 Simplified outline (SOT363) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current − 85 V − 75 V single diode loaded; see Fig.2 − 250 mA all diodes loaded; see Fig.2 − 100 mA − 450 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 350 mW square wave; Tj = 25 °C prior to surge; see Fig.4 Ts = 60 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Note 1. One or more diodes loaded. 1997 Oct 21 2 Philips Semiconductors Product specification High-speed double diode array BAV70S ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V VR = 25 V 30 nA VR = 75 V 2.5 µA VR = 25 V; Tj = 150 °C 60 µA see Fig.5 VR = 75 V; Tj = 150 °C 100 µA Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Note 1. One or more diodes loaded. 1997 Oct 21 3 note 1 VALUE UNIT 255 K/W Philips Semiconductors Product specification High-speed double diode array BAV70S GRAPHICAL DATA MBK148 300 MBG382 300 handbook, halfpage IF (mA) IF (mA) single diode loaded (1) (2) (3) 200 200 all diodes loaded 100 100 0 0 0 100 Ts (°C) 200 0 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 102 10 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1997 Oct 21 4 104 Philips Semiconductors Product specification High-speed double diode array BAV70S MGA885 102 MBG446 0.8 handbook, halfpage Cd (pF) IR (µA) VR = 75 V 10 0.6 max 75 V 1 10 0.4 25 V 1 0.2 typ typ 10 2 0 100 0 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 1997 Oct 21 Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diode array BAV70S handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 1997 Oct 21 6 t tp output signal Philips Semiconductors Product specification High-speed double diode array BAV70S PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1997 Oct 21 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification High-speed double diode array BAV70S DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Oct 21 8 Philips Semiconductors Product specification High-speed double diode array BAV70S NOTES 1997 Oct 21 9 Philips Semiconductors Product specification High-speed double diode array BAV70S NOTES 1997 Oct 21 10 Philips Semiconductors Product specification High-speed double diode array BAV70S NOTES 1997 Oct 21 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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