PHILIPS BAW56T

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D173
BAW56T
High-speed double diode
Product specification
File under Discrete Semiconductors, SC01
1997 Dec 19
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
FEATURES
DESCRIPTION
• Very small plastic SMD package
Two high-speed switching diodes in a
common anode configuration,
fabricated in planar technology, in a
very small rectangular SMD SOT416
(SC-75) package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
PINNING
handbook, halfpage
PIN
DESCRIPTION
1
cathode 1
2
cathode 2
3
common anode
3
3
1
APPLICATIONS
• High-speed switching in e.g.
surface mounted circuits.
1
2
2
MAM369
Marking code: A1.
Fig.1 Simplified outline (SOT416; SC-75) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode (unless otherwise specified)
VRRM
repetitive peak reverse voltage
−
85
V
VR
continuous reverse voltage
−
75
V
IF
continuous forward current
single diode loaded
−
150
mA
both diodes loaded
−
75
mA
−
500
mA
t = 1 µs
−
4
A
t = 1 ms
−
1
A
t=1s
−
0.5
A
−
170
mW
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Ts = 90 °C; see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ts = 90 °C; one diode loaded
Ptot
total power dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
+150
°C
1997 Dec 19
2
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
IR
forward voltage
see Fig.3
reverse current
IF = 1 mA
0.715
V
IF = 10 mA
0.855
V
IF = 50 mA
1
V
IF = 150 mA
1.25
V
see Fig.5
VR = 25 V
30
nA
VR = 75 V
1
µA
VR = 25 V; Tj = 150 °C
30
µA
VR = 75 V; Tj = 150 °C
50
µA
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
2
pF
trr
reverse recovery time
switching from IF = 10 mA to IR = 10 mA;
4
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
ns
Vfr
forward recovery voltage
switched to IF = 10 mA; tr = 20 ns; see Fig.8
V
1.75
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
1997 Dec 19
3
one diode loaded
VALUE
UNIT
350
K/W
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
GRAPHICAL DATA
MBK249
300
IF
(mA)
MBG382
300
handbook, halfpage
handbook, halfpage
IF
(mA)
(1)
(1)
200
(2)
(3)
200
(2)
100
100
0
0
0
100
Ts (°C)
200
(1) One diode loaded.
(2) Both diodes loaded.
Fig.2
0
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Maximum permissible continuous forward
current per diode as a function of
soldering point temperature.
Fig.3
Forward current as a function of
forward voltage.
MBG704
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1997 Dec 19
4
104
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
MGA884
105
IR
(nA)
10
MBH191
2.5
Cd
(pF)
handbook, halfpage
2.0
V R = 75 V
4
1.5
10
max
3
75 V
1.0
10
25 V
2
0.5
typ
typ
10
0
100
0
T j ( o C)
0
200
5
10
15
20
VR (V)
25
f = 1 MHz; Tj = 25 °C.
Fig.5
1997 Dec 19
Reverse current as a function of
junction temperature.
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R = 50 Ω
S
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
1997 Dec 19
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
E
B
A
X
HE
v M A
3
Q
A
1
A1
2
e1
c
bp
w M B
Lp
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
0.95
0.60
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1
0.5
1.75
1.45
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT416
1997 Dec 19
REFERENCES
IEC
JEDEC
EIAJ
SC-75
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 19
8
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
NOTES
1997 Dec 19
9
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
NOTES
1997 Dec 19
10
Philips Semiconductors
Product specification
High-speed double diode
BAW56T
NOTES
1997 Dec 19
11
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© Philips Electronics N.V. 1997
SCA56
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Printed in The Netherlands
117027/00/02/pp12
Date of release: 1997 Dec 19
Document order number:
9397 750 02873