DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAW56T High-speed double diode Product specification File under Discrete Semiconductors, SC01 1997 Dec 19 Philips Semiconductors Product specification High-speed double diode BAW56T FEATURES DESCRIPTION • Very small plastic SMD package Two high-speed switching diodes in a common anode configuration, fabricated in planar technology, in a very small rectangular SMD SOT416 (SC-75) package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. PINNING handbook, halfpage PIN DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode 3 3 1 APPLICATIONS • High-speed switching in e.g. surface mounted circuits. 1 2 2 MAM369 Marking code: A1. Fig.1 Simplified outline (SOT416; SC-75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode (unless otherwise specified) VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current single diode loaded − 150 mA both diodes loaded − 75 mA − 500 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 170 mW IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ts = 90 °C; see Fig.2 square wave; Tj = 25 °C prior to surge; see Fig.4 Ts = 90 °C; one diode loaded Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − +150 °C 1997 Dec 19 2 Philips Semiconductors Product specification High-speed double diode BAW56T ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 0.715 V IF = 10 mA 0.855 V IF = 50 mA 1 V IF = 150 mA 1.25 V see Fig.5 VR = 25 V 30 nA VR = 75 V 1 µA VR = 25 V; Tj = 150 °C 30 µA VR = 75 V; Tj = 150 °C 50 µA Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6 2 pF trr reverse recovery time switching from IF = 10 mA to IR = 10 mA; 4 RL = 100 Ω; measured at IR = 1 mA; see Fig.7 ns Vfr forward recovery voltage switched to IF = 10 mA; tr = 20 ns; see Fig.8 V 1.75 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point 1997 Dec 19 3 one diode loaded VALUE UNIT 350 K/W Philips Semiconductors Product specification High-speed double diode BAW56T GRAPHICAL DATA MBK249 300 IF (mA) MBG382 300 handbook, halfpage handbook, halfpage IF (mA) (1) (1) 200 (2) (3) 200 (2) 100 100 0 0 0 100 Ts (°C) 200 (1) One diode loaded. (2) Both diodes loaded. Fig.2 0 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Maximum permissible continuous forward current per diode as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1997 Dec 19 4 104 Philips Semiconductors Product specification High-speed double diode BAW56T MGA884 105 IR (nA) 10 MBH191 2.5 Cd (pF) handbook, halfpage 2.0 V R = 75 V 4 1.5 10 max 3 75 V 1.0 10 25 V 2 0.5 typ typ 10 0 100 0 T j ( o C) 0 200 5 10 15 20 VR (V) 25 f = 1 MHz; Tj = 25 °C. Fig.5 1997 Dec 19 Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed double diode BAW56T handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 1997 Dec 19 6 t tp output signal Philips Semiconductors Product specification High-speed double diode BAW56T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 1997 Dec 19 REFERENCES IEC JEDEC EIAJ SC-75 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification High-speed double diode BAW56T DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Dec 19 8 Philips Semiconductors Product specification High-speed double diode BAW56T NOTES 1997 Dec 19 9 Philips Semiconductors Product specification High-speed double diode BAW56T NOTES 1997 Dec 19 10 Philips Semiconductors Product specification High-speed double diode BAW56T NOTES 1997 Dec 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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