DFM1200FXM18-A000 DFM1200FXM18-A000 Fast Recovery Diode Module DS5420-1.5 April 2001 FEATURES ■ Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM (typ) VF (max) IF (max) IFM 1800V 2.0V 1200A 2400A ■ Isolated Base ■ Dual Diodes Can Be Paralleled for 2400A Rating ■ MMC Baseplate With AlN Substrates External connection 1(C1) 2(C2) 3(A1) 4(A2) APPLICATIONS ■ Brake Chopper Diode ■ Boost and Buck Converters ■ Free-wheel Circuits ■ Motor Drives ■ Resonant Converters ■ Induction Heating ■ Multi-level Switch Inverters External connection External connection for single 2400A diode application Fig. 1 Dual diode circuit diagram The DFM1200FXM18-A000 is a dual 1800 volt, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 3 1 4 2 ORDERING INFORMATION Order As: DFM1200FXM18-A000 Note: When ordering, please use the complete part number. Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale) 1/7 www.dynexsemi.com DFM1200FXM18-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter Max. Units Repetitive peak reverse voltage Tvj = 125˚C 1800 V IF Forward current (per arm) DC, Tcase = 75˚C, Tvj = 125˚C 1200 A IFM Max. forward current Tcase = 110˚C, tp = 1ms 2400 A I2t I2t value fuse current rating VR = 0, tp = 10ms, Tvj = 125˚C 480 kA2s Pmax Maximum power dissipation Tcase = 25˚C, Tvj = 125˚C 5000 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4.0 kV Qpd Partial discharge IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS 10 pC VRRM THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Parameter Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Thermal resistance - diode (per arm) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 20 ˚C/kW - - 8 ˚C/kW junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature - - - 125 ˚C Storage temperature range - –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M8 - - 10 Nm Screw torque 2/7 www.dynexsemi.com DFM1200FXM18-A000 STATIC ELECTRICAL CHARACTERISTICS - PER ARM Tvj = 25˚C unless stated otherwise. Parameter Symbol Test Conditions Min. Typ. Max. Units IRM Peak reverse current VR = 1800V, Tvj = 125˚C - - 20 mA VF Forward voltage IF = 1200A - 2.0 2.3 V IF = 1200A, Tvj = 125˚C - 2.0 2.3 V - 20 - nH Min. Typ. Max. Units - 15 - nH Test Conditions Min. Typ. Max. Units IF = 1200A, - 880 - A L Inductance - STATIC ELECTRICAL CHARACTERISTICS Tvj = 25˚C unless stated otherwise. Parameter Symbol LM Test Conditions Module inductance - (externally connected in parallel) DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM Tvj = 25˚C unless stated otherwise. Parameter Symbol Irr Peak reverse recovery current Qrr Reverse recovery charge dIF/dt = 8000A/µs, - 320 - µC Erec Reverse recovery energy VR = 900V - 240 - mJ Test Conditions Min. Typ. Max. Units IF = 1200A, - 1020 - A Tvj = 125˚C unless stated otherwise. Symbol Parameter Irr Peak reverse recovery current Qrr Reverse recovery charge dIF/dt = 8000A/µs, - 540 - µC Erec Reverse recovery energy VR = 900V - 360 - mJ 3/7 www.dynexsemi.com DFM1200FXM18-A000 TYPICAL CHARACTERISTICS 100 Transient thermal impedance, Zth (j-c) - (°C/kW ) 3200 2800 Tj = 25˚C Foward current, IF - (A) 2400 2000 Tj = 125˚C 1600 1200 800 10 1 2 3 4 Ri (˚C/KW) 0.8 2.7416 3.4916 12.9568 τi (ms) 0.0066332 1.4384 12.8758 110.2138 400 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 1 0.001 3.5 0.01 0.1 Pulse width, tp - (s) 10 1 Fig. 4 Transient thermal impedance Fig. 2 Diode typical forward characteristics 2000 6000 1800 5000 DC forward current, IF - (A) Power dissipation, Ptot - (W) 1600 1400 4000 1200 1000 3000 2000 800 600 400 2000 200 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) Fig. 5 Power dissipation 140 160 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig. 6 DC current rating vs case temperature 4/7 www.dynexsemi.com DFM1200FXM18-A000 1600 Reverse recovery current, IRR - (A) 1400 1200 1000 800 600 400 200 Tj = 125˚C 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000 Fig. 7 RBSOA 5/7 www.dynexsemi.com DFM1200FXM18-A000 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 15 1 4 2 43.3 57 65 18 57 3 65 15 20 6x Ø7 38 31.5 4x M8 5 140 Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3 Copper terminal thickness, main terminal pins = 1.5 ± 0.1 Nominal weight: 1050g Module outline type code: F 6/7 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com