VISHAY DG441BDY

DG441B/442B
Vishay Siliconix
New Product
Improved Quad SPST CMOS Analog Switches
FEATURES
D
D
D
D
D
D
BENEFITS
Low On-Resistance: 45 Low Power Consumption: 1.0 mW
Fast Switching Action—tON: 120 ns
Low Charge Injection—Q: −1 pC
TTL/CMOS-Compatible Logic
Single Supply Capability
D
D
D
D
D
APPLICATIONS
Less Signal Errors and Distortion
Reduced Power Supply Requirements
Faster Throughput
Reduced Pedestal Errors
Simple Interfacing
D
D
D
D
D
D
Audio Switching
Data Acquisition
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
DESCRIPTION
The DG441B/442B are monolithic quad analog switches
designed to provide high speed, low error switching of analog
and audio signals. The DG441B/442B are upgrades to the
original DG441/442.
Combing low on-resistance (45 , typ.) with high speed
(tON 120 ns, typ.), the DG441B/442B are ideally suited for
Data Acquisition, Communication Systems, Automatic Test
Equipment, or Medical Instrumentation. Charge injection has
been minimized on the drain for use in sample-and-hold
circuits.
The DG441B/442B are built using Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
When on, each switch conducts equally well in both directions
and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG441B
Dual-In-Line and SOIC
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V−
4
13
V+
Logic
DG441B
DG442B
GND
5
12
NC
0
ON
OFF
S4
6
11
S3
1
OFF
ON
D4
7
10
D3
IN4
8
9
IN3
TRUTH TABLE
Logic “0” v 0.8 V
Logic “1” w 2.4 V
Top View
ORDERING INFORMATION
DG441B
QFN16 (4x4 mm)
Temp Range
D1 IN1 IN2 D2
16
15
14
16 Pin Plastic DIP
16-Pin
13
S1
1
12
S2
V−
2
11
V+
GND
3
10
NC
S4
4
9
S3
5
6
7
Package
−40
40 to 85_C
16 Pin Narrow SOIC
16-Pin
16 Pin QFN 4x4 mm
16-Pin
Part Number
DG441BDJ
DG442BDJ
DG441BDY
DG442BDY
DG441BDN
DG442BDN
8
D4 IN4 IN3 D3
Top View
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
www.vishay.com
1
DG441B/442B
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . (V−) −2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
QFN-16d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
d. Derate 12 mW/_C above 25_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
Parameter
Limits
−40 to 85_C
V+ = 15 V, V− = −15 V, VL = 5 V. VIN = 2.4 V,
0.8 Vf
Tempb
Mind
VANALOG
Full
−15
rDS(on)
IS = 1 mA, VD = #10 V
Room
Full
45
80
95
rDS(on)
IS = 1 mA, VD = "10 V
Room
Full
2
4
5
Symbol
Typc
Maxd
Unit
15
V
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
On-Resistance Match Between
Channelse
Switch Off
Leakage Current
Channel On
Leakage Current
IS(off)
ID(off)
ID(on)
VD = "14 V
V, VS = #14 V
VS = VD = "14 V
Room
Full
−0.5
−5
"0.01
0.5
5
Room
Full
−0.5
−5
"0.01
0.5
5
Room
Full
−0.5
−10
#0.02
0.5
10
nA
Digital Control
Input Voltage Low
VINL
Full
Input Voltage High
VINH
Full
2.4
0.8
Input Current VIN Low
IINL
VIN under test = 0.8 V, All Other = 2.4 V
Full
−1
−0.01
1
Input Current VIN High
IINH
VIN under test = 2.4 V, All Other = 0.8 V
Full
−1
0.01
1
Turn-On Time
tON
120
220
tOFF
RL = 1 k , CL = 35 pF
VS = 10 V, See Figure 2
Room
Turn-Off Time
Room
65
120
Q
CL = 1 nF, VS = 0 V, Vgen = 0 V, Rgen = 0 Room
−1
Off Isolatione
OIRR
90
XTALK
RL = 50 , CL = 15 pF, VS = 1 VRMS
f = 100 kHz
Room
Crosstalke (Channel-to-Channel)
Room
95
Room
4
V
A
Dynamic Characteristics
Charge Injectione
Source Off Capacitancee
CS(off)
Drain Off Capacitancee
CD(off)
Channel On Capacitancee
CD(on)
f = 1 MHz
VS = VD = 0 V, f = 1 MHz
Room
4
Room
16
ns
pC
dB
pF
p
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I−
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2
V+ = 16.5 V, V− = −16.5 V
VIN = 0 or 5 V
Room
Full
Room
Full
1
5
−1
−5
A
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
DG441B/442B
Vishay Siliconix
New Product
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 12 V, V− = 0 V, VIN = 2.4 V, 0.8 Vf
Limits
−40 to 85_C
Tempb
Mind
Full
0
Typc
Maxd
Unit
12
V
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
Room
Full
90
160
200
RL = 1 k , CL = 35 pF
VS = 8 V, See Figure 2
Room
120
300
Room
60
200
CL = 1 nF Vgen = 6 V, Rgen = 0 Room
4
rDS(on)
IS = 1 mA, VD = 3 V, 8 V
Turn-On Time
tON
Turn-Off Time
tOFF
Q
Dynamic Characteristics
Charge Injection
ns
pC
Power Supplies
Positive Supply Current
I+
VIN = 0 or 5 V
Negative Supply Current
I−
Room
Full
Room
Full
1
5
−1
−5
A
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
INX
V−
Level
Shift/
Drive
V+
GND
V−
FIGURE 1.
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
www.vishay.com
3
DG441B/442B
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
rDS(on) vs. VD and Temperature
110
100
100
90
90
80
"5 V
70
r DS(on) ( )
80
r DS(on) ( )
V+ = 15 V
V− = −15 V
70
"10 V
60
50
"15 V
40
"20 V
30
60
125_C
50
85_C
40
25_C
30
−55_C
20
20
10
0
−15
10
−20 −16 −12
−8
−4
0
4
8
12
16
20
−10
−5
0
5
10
15
VD − Drain Voltage (V)
VD − Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
Input Switching Threshold vs. Supply Voltage
250
2.5
225
V+ = 5 V
200
2
150
V TH ( V )
r DS(on) ( )
175
7V
125
10 V
100
12 V
1.5
1
15 V
75
50
0.5
25
0
0
0
2
4
6
8
10
12
14
16
4
6
8
VD − Drain Voltage (V)
12
14
16
18
20
V+ Positive Supply (V)
Leakage Currents vs. Analog Voltage
Leakage Currents vs. Temperature
80
60
10
1 nA
V+ = 22 V
V− = −22 V
TA = 25_C
V+ = 15 V
V− = −15 V
VS, VD = "14 V
I S, I D − Current
I S,I D − Current (pA)
40
20
0
−20
IS(off), ID(off)
ID(on)
100 pA
IS(off), ID(off)
10 pA
−40
−60
−80
−20
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4
−15
−10
−5
0
5
Temperature (_C)
10
15
20
1 pA
−55
−35
−15
5
25
45
65
85
105 125
Temperature (_C)
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
DG441B/442B
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Single Supply Voltage
Switching Time vs. Power Supply Voltage
400
500
V− = 0 V
300
Switching Time (ns)
Switching Time (ns)
400
300
200
ton
200
ton
100
100
toff
toff
0
2
4
6
8
10
12
14
16
18
0
20
0
V+ − Positive Supply (V)
30
"4
"8
"12
"16
"20
V+, V− Positive and Negative Supplies (V)
QS, QD − Charge Injection vs. Analog Voltage
Off Isolation vs. Frequency
120
V+ = 15 V
V− = −15 V
110
20
0
V+ = 15 V
V− = −15 V
OIRR (dB)
Q − Charge (pC)
100
10
V+ = 12 V
V− = 0 V
90
RL = 50 80
70
−10
60
−20
−30
−15
50
40
−10
−5
0
5
10
15
10 k
100 k
VANALOG − Analog Voltage (V)
1M
10 M
f − Frequency (Hz)
Supply Current vs. Switching Frequency
I+ − Supply Current (mA)
4
3
2
1
0
1k
10 k
100 k
1M
f − Frequency (Hz)
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
www.vishay.com
5
DG441B/442B
Vishay Siliconix
New Product
TEST CIRCUITS
+15 V
3V
Logic
Input
50%
V+
S
10 V
0V
D
VO
IN
3V
GND
tr <20 ns
tf <20 ns
50%
CL
35 pF
RL
1
k
V−
−15 V
Switch
Input
VS
Switch
Output
0V
CL (includes fixture and stray capacitance)
tOFF
VO
80%
80%
tON
Note:
Logic input waveform is inverted for DG442.
FIGURE 2. Switching Time
+15 V
V
O
VO
V+
Rg
S
D
INX
VO
IN
CL
1 nF
3V
V−
GND
OFF
ON
INX
OFF
ON
Q = VO x CL
(DG442B)
−15 V
OFF
(DG441B)
OFF
FIGURE 3. Charge Injection
C = 1 mF tantalum in parallel with 0.01 mF ceramic
+15 V
C
+15 V
C
V+
S1
VS
Rg = 50 D1
IN1
50 S2
VO
0V, 2.4 V
D2
V−
GND
C
V−
C
−15 V
−15 V
XTALK Isolation = 20 log
C = RF bypass
RL
IN
0V, 2.4 V
RL
IN2
GND
VO
D
Rg = 50 0V, 2.4 V
NC
V+
S
VS
Off Isolation = 20 log
VS
VS
VO
VO
FIGURE 4. Crosstalk
FIGURE 5. Off Isolation
+15 V
C
S
V+
Meter
0 V, 2.4 V
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
V−
C
−15 V
FIGURE 6. Source/Drain Capacitances
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Document Number: 72625
S-32553—Rev. A, 15-Dec-03
DG441B/442B
Vishay Siliconix
New Product
APPLICATIONS
+24 V
+15 V
RL
DG442B
V+
I = 3A
150 +15 V
VN0300L, M
IN
+15 V
VIN
10 k
+15 V
GND
1/4 DG442B
S
+
D
−
CH
V−
IN
0 = Load Off
1 = Load On
−15 V
FIGURE 7. Power MOSFET Driver
VIN
VOUT
+
−
H = Sample
L = Hold
FIGURE 8. Open Loop Sample-and-Hold
+
−
VOUT
+15 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit accuracy of circuit.
V+
GAIN1
AV = 1
R1
90 k
GAIN2
AV = 10
R2
5 k
With SW4 Closed
VOUT
VIN
GAIN3
AV = 20
R3
4 k
GAIN4
AV = 100
R4
1 k
=
R1 + R2 + R3 + R4
R4
= 100
DG441 or DG442
V−
GND
−15 V
FIGURE 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
www.vishay.com
7