DG201HS Vishay Siliconix High-Speed Quad SPST CMOS Analog Switch Fast Switching—tON: 38 ns Low On-Resistance: 25 Low Leakage: 100 pA Low Charge Injection TTL/CMOS Logic Compatible Single Supply Compatibility High Current Rating: –30 mA Faster Throughput Higher Accuracy Reduced Pedestal Error Upgrades Existing Designs Simple Interfacing Replaces HI201HS, ADG201HS Space Savings (TSSOP) Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Integrator Reset Circuits Choppers Gain Switching Avionics To achieve high voltage ratings and superior switching performance, the DG201HS is built on a proprietary high-voltage silicon-gate process. An epitaxial layer prevents latchup. The DG201HS is an improved monolithic device containing four independent analog switches. It is designed to provide high speed, low error switching of analog signals. Combining low on-resistance (25 ) with high speed (tON: 38 ns), the DG201HS is ideally suited for high speed data acquisition requirements. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply values, when off. LCC Dual-In-Line, SOIC and TSSOP D1 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V– 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View Document Number: 70038 S-52433—Rev. F, 06-Sep-99 IN1 NC IN2 D2 Key 3 2 1 20 19 S1 4 18 S2 Logic V– 5 17 V+ 0 ON 1 OFF NC 6 16 NC GND 7 15 NC S4 8 14 S3 9 D4 10 IN4 11 12 NC IN3 Top View Switch Logic “0” 0.8 V Logic “1” 2.4 V 13 D3 www.vishay.com FaxBack 408-970-5600 4-1 DG201HS Vishay Siliconix ORDERING INFORMATION Temp Range –40 40 to 85 85_C C Package Part Number 16-Pin Plastic DIP DG201HSDJ 16-Pin Narrow SOIC DG201HSDY 16-Pin TSSOP DG201HSDQ 16-Pin CerDIP DG201HSAK/883 LCC-20 DG201HSAZ/883 –55 to 125_C ABSOLUTE MAXIMUM RATINGS V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –4 V to (V+) +4 V 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOIC and TSSOPe . . . . . . . . . . . . . . . . . . . . . . . 600 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (A Suffix) . . . . . . . . . . . . . . . . . . . –65 to 150_C (D Suffix) . . . . . . . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/_C above 75_C. d. Derate 12 mW/_C above 75_C. e. Derate 7.6 mW/_C above 75_C. SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX 5V Reg Level Shift/ Drive INX V– V+ DX GND V– FIGURE 1. www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70038 S-52433—Rev. F, 06-Sep-99 DG201HS Vishay Siliconix Test Conditions Unless Specified Parameter Symbol A Suffix D Suffix –55 to 125_C –40 to 85_C V+ = 15 V, V– = –15 V VIN = 3 V, 0.8 Vf Tempb IS = –10 mA, VD = "8.5 V V+ = 13.5 V, V– = –13.5 V Room Full 25 Room 3 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Typc Mind Maxd Mind Maxd Unit V– V+ V– V+ V 50 75 W Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full rDS(on) Match IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) V+ = 16.5 V, V– = –16.5 V VD = "15.5 V VS = #15.5 V V+ = 16.5 V, V– = –16.5 V VS = VD = #15.5 V 50 75 % nA A Digital Control Input, High Voltage VINH Full Input, Low Voltage VINL Full Input Capacitance Input Current Cin IINL or IINH Full VIN under test = 0.8 V, 3 V 2.4 2.4 0.8 V 0.8 5 Full pF –1 1 –1 1 mA Dynamic Characteristics Turn-On Time Turn-Off Time tON tOFF1 RL = 1 kW , CL = 35 pF VS = "10 V, VINH = 3 V See Figure 2 Room Full 48 60 75 60 75 Room Full 30 50 70 50 70 tOFF2 Room 150 Output Settling Time to 0.1% ts Room 180 Charge Injection Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W Room –5 OFF Isloation OIRR RL = 1 kW , CL = 10 pF f = 100 kHz Room 85 Crosstalk (Channel-to-Channel) XTALK Any Other Channel Switches RL = 1 kW , CL = 10 pF f = 100 kHz Room 100 Source Off Capacitance CS(off) Room 8 Drain Off Capacitance CD(off) Channel On Capacitance CD(on) Drain-to-Source Capacitance pC dB Room 8 Room 30 CDS(off) Room 0.5 I+ Room Full 4.5 Room Full 3.5 VS, VD = 0 V, V f = 1 MHz MH ns pF F Power Supplies Positive Supply Current Negative Supply Current I– Power Consumptionc PC Document Number: 70038 S-52433—Rev. F, 06-Sep-99 V+ = 15 V, V V– V = –15 15 V VIN = 0 or 5 V Full 10 –6 10 mA –6 240 240 mW www.vishay.com S FaxBack 408-970-5600 4-3 DG201HS Vishay Siliconix Test Conditions Unless Specified Parameter Symbol A Suffix D Suffix –55 to 125_C –40 to 85_C V+ = 10.8 10 8 V to 16.5 16 5 V V– = GND = 0 V VIN = 3 V, 0.8 Vf Tempb IS = –10 mA, VD = 8.5 V V+ = 10.8 V Room Full 65 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Typc Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) Full V+ = 16.5 V,, VS = 0.5 V,, 10 V VD = 10 V, V 0.5 05V V+ = 16.5 V, VD = 0.5 V, 10 V 0 V+ 0 90 120 V+ V 90 120 W nA A Digital Control Input, High Voltage VINH Full Input, Low Voltage VINL Full Input Capacitance Cin Input Current IINL or IINH Full V+ = 16.5 V VIN under test = 0.8 V, 3 V 2.4 2.4 0.8 0.8 5 Full V pF –1 1 –1 1 mA Dynamic Characteristics Turn-On Time Turn-Off Time tON tOFF1 F VS = 2 V RL = 1 kW , CL = 35 pF, V= 10.8 V, See Figure 2 Room Full 50 70 50 70 Room Full 50 70 50 70 tOFF2 Room 150 Output Settling Time to 0.1% ts Room 180 Charge Injection Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W Room 10 Off Isloation OIRR RL = 1 kW , CL = 10 pF f = 100 kHz Room 85 Crosstalk (Channel-to-Channel) XTALK Any Other Channel Switches RL = 1 kW , CL = 10 pF f = 100 kHz Room 100 Source Off Capacitance CS(off) Room 10 Room 10 Room 30 Drain Off Capacitance CD(off) Channel On Capacitance CD(on) ns pC dB f = 1 MHz VANALOG = 0 V pF F Power Supplies Positive Supply Current I+ Power Consumptionc PC V+ = 15 V, VIN = 0 or 5 V Full 10 10 mA Full 150 150 mW Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com S FaxBack 408-970-5600 4-4 Document Number: 70038 S-52433—Rev. F, 06-Sep-99 DG201HS Vishay Siliconix _ rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 50 r DS(on)– Drain-Source On-Resistance ( ) r DS(on)– Drain-Source On-Resistance ( ) 70 60 50 5 V 40 10 V 30 15 V 20 20 V 10 0 –20 –16 –12 –8 –4 0 4 8 12 16 20 V+ = 15 V V– = –15 V 40 125_C 85_C 30 25_C 20 0_C –55_C 10 0 –15 –10 –5 VD – Drain Voltage (V) rDS(on) vs. VD and Single Power Supply Voltages 10 15 Leakage Currents vs. Temperature V+ = 5 V 160 140 1 nA 120 Leakage r DS(on)– Drain-Source On-Resistance ( ) 5 10 nA 180 7V 100 80 10 V 60 ID(on) 100 pA 12 V IS(off), ID(off) 15 V 40 20 0 0 2 4 6 8 10 12 14 10 pA –60 –40 –20 16 VD – Drain Voltage (V) 0 20 40 60 80 100 120 140 Temperature (_C) Input Switching Threshold vs. Supply Voltage Switching Time vs. Power Supply Voltage 2.5 55 2 50 Switching Time (ns) V TH ( V ) 0 VD – Drain Voltage (V) 1.5 1 45 tON 40 35 0.5 tOFF 30 0 4 6 8 10 12 14 Positive Supplies (V) Document Number: 70038 S-52433—Rev. F, 06-Sep-99 16 18 20 4 6 8 10 12 14 16 18 20 Supply Voltage (V) www.vishay.com S FaxBack 408-970-5600 4-5 DG201HS Vishay Siliconix _ Switching Times vs. Temperature Switching Times vs. Single Supply Voltage 65 45 V+ = 15 V V– = –15 V tON 60 55 t ON, t OFF (ns) Switching Time (ns) 40 35 tOFF 30 50 45 tON 40 25 35 tOFF 20 –55 30 –25 0 25 50 75 100 4 125 6 8 Switching Times vs. Temperature 14 16 18 20 Charge Injection vs. Source Voltage V+ = 15 V, V– = 0 V V+ = 10.8 V V– = 0 V 10 40 Chargie Injection (pC) 45 Switching Time (ns) 12 20 50 tON 35 tOFF 30 0 –10 V+ = 15 V V– = –15 V –20 –30 25 20 –55 10 V+ – Positive Supply (V) Temperature (_C) –40 –25 0 25 50 75 100 125 –15 –10 Temperature (_C) –5 0 5 10 15 VS – Source Voltage (V) Off Isolation vs. Frequency 120 V+ = 15 V V– = –15 V 110 100 RL = 100 OIRR 90 80 70 RL = 1 k 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) www.vishay.com S FaxBack 408-970-5600 4-6 Document Number: 70038 S-52433—Rev. F, 06-Sep-99 DG201HS Vishay Siliconix +15 V V+ D S 10 V IN CL 35 pF RL 1 kW V– tr <20 ns tf <20 ns 50% 0V VO 3V GND 3V Logic Input tOFF1 Switch Input VS Switch Output VO 90% 10% tON –15 V tOFF2 CL (includes fixture and stray capacitance) RL VO = VS RL + rDS(on) FIGURE 2. Switching Time +15 V V+ Rg S D IN CL 1 nF 3V INX V– GND DVO VO VO SWON OFF Q = DVO x CL –15 V FIGURE 3. Charge Injection +15 V C +15 V V+ C V+ S VS S1 VS VO D Rg = 50 W D1 50 W IN1 0V, 3 V Rg = 50 W 0V, 3 V RL IN GND V– C NC 0V, 3 V S2 D2 VO RL IN2 GND V– C –15 V –15 V Off Isolation = 20 log FIGURE 4. Off Isolation Document Number: 70038 S-52433—Rev. F, 06-Sep-99 VS VO XTALK Isolation = 20 log VS VO C = RF bypass FIGURE 5. Crosstalk www.vishay.com FaxBack 408-970-5600 4-7 DG201HS Vishay Siliconix A high-speed, low-glitch analog switch such as Vishay Siliconix’s DG201HS improves the accuracy and shortens the acquisition and settling times of a sample-and-hold circuit. Input Buffer DG201HS JFET Buffer OUTPUT to A/D Converter VANALOG CH (Polystyrene) Si581 SAMPLE/HOLD www.vishay.com FaxBack 408-970-5600 4-8 Document Number: 70038 S-52433—Rev. F, 06-Sep-99 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1