SSG4930N 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. B L D M A C N J FEATURES H Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F G K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize S D SOP-8 2.5K 13’ inch G D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit VDS 30 V VGS ±12 V ID @ TA = 25°C 5.0 A ID @ TA = 70°C 4.1 A IDM ±30 A IS 1.7 A PD @ TA = 25°C 2.1 W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range PD @ TA = 70°C 1.3 W TJ, TSTG -55 ~ 150 °C 62.5 °C / W 80 °C / W Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 Thermal Resistance Junction-Ambient (Max.) t ≦ 10 sec 1 Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4930N 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) 0.7 - - V VDS= VGS, ID= 250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS= ±12V Zero Gate Voltage Drain Current IDSS - - 1 μA VDS= 24V, VGS= 0V - - 25 μA VDS= 24V, VGS= 0V, TJ= 55°C On-State Drain Current 1 ID(on) 20 - - A VDS= 5V, VGS= 4.5V - - 58 - - 82 gfs - 22 - S VDS= 15V, ID= 5A VSD - 0.7 - V IS= 1.7A, VGS= 0V Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Qg - 6.3 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 1.9 - Input Capacitance Ciss - 257 - Output Capacitance Coss - 62 - Reverse Transfer Capacitance Crss - 30 - Turn-On Delay Time Td(on) - 22 - Tr - 40 - Td(off) - 50 - Tf - 20 - Turn-Off Delay Time Fall Time VGS= 4.5V, ID= 5A VGS= 2.5V, ID= 4.2A 2 Total Gate Charge Rise Time mΩ nC ID= 5A VDS= 15V VGS= 4.5V pF VDS= 15V VGS= 0V f= 1MHz nS VDD= 15V ID= 1A VGEN= 4.5V RL= 15Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4930N Elektronische Bauelemente 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4930N Elektronische Bauelemente 5 A, 30 V, RDS(ON) 58 m Dual N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 4