SSG4902N 6.4 A, 60 V, RDS(ON) 35 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. B L D M FEATURES A Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. N J H PRODUCT SUMMARY VDS(V) 60 REF. SSG4902N RDS(on) (m 35@VGS=10V 45@VGS=4.5V C A B C D E F G ID(A) ±6.4 ±5.6 PACKAGE INFORMATION G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D Package MPQ LeaderSize G D SOP-8 2.5K 13’ inch S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID @ TA = 25°C ±6.4 A ID @ TA = 70°C ±5.2 A IDM ±40 A IS 2 A PD @ TA = 25°C 2.1 W Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range PD @ TA = 70°C 1.3 W TJ, TSTG -55 ~ 150 °C 62.5 °C / W 110 °C / W THERMAL RESISTANCE RATINGS Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 26-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSG4902N 6.4 A, 60 V, RDS(ON) 35 m Dual N-Channel Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS STATIC Gate Threshold Voltage VGS(th) 1 - - V VDS= VGS, ID= 250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS= 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 μA VDS= 60V, VGS= 0V - - 10 μA VDS= 60V, VGS= 0V, TJ= 55°C 20 - - A - - 35 - - 45 gfs - 11 - S VDS= 15V, ID= 6.4A VSD - - 1.2 V IS= 2.0A, VGS= 0V On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) DYNAMIC mΩ VDS= 5V, VGS= 10V VGS= 10V, ID= 6.4A VGS= 4.5V, ID= 5.6A 2 Total Gate Charge Qg - 12.5 - Gate-Source Charge Qgs - 2.4 - Gate-Drain Charge Qgd - 2.6 - Turn-On Delay Time Td(on) - 11 - Tr - 8 - Td(off) - 19 - Tf - 6 - nC ID= 6.4A VDS= 30V VGS= 4.5V nS VDD= 30V ID= 1A VGEN= 10V RL= 30Ω SWITCHING Rise Time Turn-Off Delay Time Fall Time Notes 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 26-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2