HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A(Z) Rev 1 September 1996 Features • • HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HZM6.8FA 68A MPAK-5 Outline 2 1 1 Cathode 2 Cathode 3 Cathode 5 4 3 (Top View) 4 Anode 5 Cathode HZM6.8FA Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C Note 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25°C) *1 Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 Å\ 7.0 V IZ = 5 mA, 40ms pulse Reverse current IR Å\ Å\ 2 µA VR = 3.5V Capacitance C Å\ Å\ 130 pF VR = 0V, f = 1 MHz Dynamic resistance rd Å\ Å\ 30 Ω IZ = 5 mA ESD-Capability Å\ 30 Å\ Å\ kV C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse *2 Notes 1. Per one device. 2. Failure criterion ; IRÅÑ2 µA at VR = 3.5V. HZM6.8FA Main Characteristic HZM6.8FA Package Dimensions Unit : mm 0.4±0.1 0.4±0.1 2 0.2 1.6 +– 0.1 0.16 Laser Mark 0 to 0.15 68A 4 0.4±0.1 1 Cathode 3 2 Cathode 0.4±0.1 3 Cathode 1.9 2.9±0.2 4 Anode + 0.2 5 Cathode 1.1 – 0.1 5 (0.6) 0.2 2.8 +– 0.3 1 (0.8) (0.6) (0.95) (0.95) Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK-5 — — 0.013