HZN6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-1456 (Z) Rev.0 Nov. 2001 Features • HZN6.8ZMFA has four devices in a monolithic, and can absorb surge. • VSON-5 Package is suitable for high density surface mounting. Ordering Information Type No. Laser Mark Package Code HZN6.8ZMFA 68∗(∗ : Let to Month Code) VSON-5 Pin Arrangement 1 2 1. Cathode 2. Cathode 3. Cathode 5 4 3 (Top View) 4. Anode 5. Cathode HZN6.8ZMFA Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Value Unit 150 mW Power dissipation Pd * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Four device total, See Fig.2. Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40ms pulse Reverse current IR — — 0.5 µA VR = 3.5V Capacitance C — — 25 pF VR = 0V, f = 1 MHz rd — — 30 Ω IZ = 5 mA — 25 — — kV C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Dynamic resistance 2 ESD-Capability * * 3 Notes 1. Per one device. 2. Failure criterion ; IR > 0.5 µA at VR = 3.5 V. 3. Between cathode and anode. Month Code Month of Manufacture Month Code Month of Manufacture Month Code January A July G February B August H March C September J April D October K May E November L June F December M Rev.0, Nov. 2001, page 2 of 6 HZN6.8ZMFA Main Characteristic 10-2 250 20h × 15w × 0.8t Unit: mm -4 10 10-5 10-6 0 2 4 6 8 3.0 3.8 2.45 Power Dissipation Pd (mW) 10-3 1.0 150 1.75 1.5 With polyimide board 100 50 0 10 0 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage Nonrepetitive Surge Reverses Power PRSM (W) Zener Current IZ (A) 0.3 200 50 100 150 200 Ambient Temperature Ta (˚C) Fig.2 Power Dissipation vs. Ambient Temperature 104 PRSM t Ta = 25°C nonrepetitive 103 102 10 1.0 10-5 10-4 10-3 10-2 10-1 1.0 Time t (s) Fig.3 Surge Reverse Power Ratings Rev.0, Nov. 2001, page 3 of 6 HZN6.8ZMFA Main Characteristic Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10-2 10-1 1.0 10 Time t (s) Fig.4 Transient Thermal Impedance Rev.0, Nov. 2001, page 4 of 6 102 103 HZN6.8ZMFA Package Dimensions Unit: mm 0.2 (0.1) +0.1 5 – 0.2 –0.05 0.5 0.12 +0.1 –0.05 1.0 ± 0.1 0.6 MAX 0.5 (0.1) 1.2 ± 0.1 0.2 1.6 ± 0.05 As of July, 2001 1.6 ± 0.05 Preliminary Hitachi Code JEDEC JEITA Mass (reference value) VSON-5 0.002 g Rev.0, Nov. 2001, page 5 of 6 HZN6.8ZMFA Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Nov. 2001, page 6 of 6