MIL-s-19500/49c (EL) 24 nay 1968 SUPERSEDING: See Section 6 MILITASY SPECIF1CATION SE-fICONDUCTOR DEVICE, TRANSISTOR, PNP, CEFMANIUM TYPES 2N464, 2N465, 2N467 I ‘o 1, SCOPE 1.1 =. - ThLs specification cOver$ the detail rewireaents for germanium, PNP, transistors for use in Low-pawer, amp Lifier applications in compatible electronic-equipment circuits (See 3.4 and 6.2b herein. ) 1.2 Outline and dimensions. 1.3 Maximum ratings. - See Fig. 1 herein. # (TO-5) - (At TA = +25°C, unless otherwise specified): =~’~:v:’v: ~ Al For TA > +25°C, derate ~1 Pulsed 1.4 Particular specified) : linearlY at 2.0 fil”c. (see 4.3. L herein). electrical characteristics. fhfb hf. at: f=lkHz VCB = -6Vdc IE = 1 midc t-lin. Max. --2N464 2N465 2N467 L4 27 110 --33 66 260 - (At TA = +25°C, U“LI?SS otherwise h ob ‘ib c obo NF at, f = LkHz VCB = -6Vdc lE = 1 d.dc at, (See Tab Le I herein) at: (See Table 1 herein) at: (See Table 1 herein) at: (See T.bll I herein) Min. Max. Min. Min. Min. Min. Max & ~ Q Q ------- 20 20 20 0.4 0.5 0.7 ------- L8 L8 L8 Max. * 45 45 45 Max. @ g ------- 1.0 L.O 1.0 Max. pf~ ------- 20 20 20 I FSC-596L I I MIL-S-19500/49C 2. ● (EL) APPLIC~L3 DOCUME!WS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of this specification to the extent speci fied herein: SPECIFI&4TIONS Ml LITARY Semiconductor MIL-S-19500 Devices, General Specification For sTANOASlfS MILITARY I MIL-STD-202 Test Methods for Electronic and Electrical component Parts Test Methods for Semiconductor Devices Leads, Weldable, for Electronic Component Parts MT I.-S’TD-75O MIL-STD-1276 (Copies of specifications, standards, drawings, and publications required by contractors i“ connection with specific procurement functions shcwld be obtained Both the from the procuring activity or as directed by the contracting officer. title and number or symbol should be stipulated when requesting copies. ) 3. SEQUIR2XSNTS 3.1 _. specification - Requirements for the transistors shall be in accordance with MI L-s-19500, and as othe=tae specified herein. 3.2 Abbreviations and symbols. - The abbreviations defined in Specification MIL-s-19500. and symbols used herein are 3.3 Design and construction. - The tra”sfstor shall be of the design, construction, and physical dimensions specifed o“ Figure 1. Terminal arra”~ement. 3.3.1 be aB indicated in Figure 1. 3.3.2 Operating 1“ any position. position. - The termimal .arra”gement on the transistor shall - The transistor shall be capable of proper operation 3.3.3 Terminal- 1ead len~th. - Terminal-lead length(s) other than that established in Figure 1 herein may be furnished when specified in the contract or order (see 6.3a herein) where the devices covered herein are required directly for particular Where such other lead lengths are required and equipment-circuit i“stallatio”. provided, it shall not be construed as affecting adversely the Qualified-product status of the device, or applicable JAN marking. -2- I i- I I MIL-s-19500/49c (EL) 3.3.4 Terminal-lead material and finish. - The terminal lead material shall be Type K (KOvar) Or Type F (A1lLIY 52) conforming t. requirements in Standard I-oL-sTD-1276. The terminal-lead finish shall be gold (per pertinent requirements in Standard MIL-STD-1276); however, if so specified i“ the contract or order, the lead-material finish ❑ay be tin, or tin-coating over gold. This tin-finish require❑ ent shall mat be congtrued as affecting adversely the Qualified-product status of the device, or applicable JAN ❑arking (See 6.3b herein). 3 .3.4.1 Selectivity of tet-mimql-lead material. - Where choice of lead material (see 3.3.4 above) is desired, stipulation of the particular material shall be made in contract or order. (See 6.3b herein. ) 3.4 Performance characteristics. - The transistor performance characteristics shall be as specified in Tables I, 11, and 111 herein. Except where specifically differentiated for respective Cra”sistor types (see 1.3, 1.4, and Tables I, 11, a“d III herein), the performance requirements, including characteristics, ratings, and test conditions, aPPIY equall Y tO alL transistor types covered herein. 3.5 Markin&. - Excepc as otherwise specified herein, marking sbsll be i“ accordance with Specification MI L-s-19500. If any specification-requirements waiver has been granted, the prcxluc t-identificationmarking shall consist of the “classification” type designation only. The’’manufacturer’s identification” a“d “co”ntry of origin” may, at option of the man” facrurer, be omitted from being marked directly on the semico”dwctor device covered herein. 4. QUALITT A.SSUSANCE PROVISIONS 4.1 General. - Except as othewise specified herein, the responsibility for inspection, general procedures for acceptance, classification of imapecticm, a“d inspection conditions e“d methods of rest shall be i“ accordance with Specific aticm MI L-S-19500, Quality Assurance Provisions. 4.2 Qualification and acceptance inspection. - Qmlification and Quality Conformance inspection shall be in accordance with Specification NIL-s-19500, GrO”ps A, B, Qu.lity Assurance provisions, and as otherwise specified herein. and C inspection shall consist of the examinations and tests specified in Tables Quality Conformance inspection shall include I, 11, and 111 respectively, herein. inspection of Preparation for Delivery (see 5.1 herein. ) 4.2.1 Specified LTPD for Subgroups. - The LTPD specified for a subgroup in Tables 1, II, and 111 herein shall apply for all of tbe tests, combined, in the subgroup. C&lification relative to lead-material finish. - Devices constructed with 4.2.2 either of the lead-material finishes established herein (see 3.3.4) nwy be submitted for Qualification approval. The type of finish used by the manufacturer shall be stipulated in the submittal data for the product to be tested. -3- — I MIL-S-19500/49C ●1 (EL) Acceptance inspection of lots containing multiple transistor types. - For 4.2.3 lots containing more rhnn one transistor type covered herei”, subjection of adequate samples on a sublet basis to tests in accordance with a and b below, will be acceptable. Normally applicable acceptance criteria shall apply to acceptability determination for the entire submitted lot. a. Each transistor type (sublet) shall be subjected to all Group A tests and to all Group C tests (when the Group C tests are i“cwnbent to be performed on the transistor type concerned); plus : b. The transistor type (s”blot) at the highest D.C. Current Gain level shall be subjected to all applicable Group 5 tests except Life tests. 4.2.4 Group B - Group C life test samples. - Samples that have been subjected to Group B, 340-hour Life test may be co”ti”ued o“ test for 1000 hours Ln order to satisfy Group C life test requirements These samples shall be predesignated, a“d shall remain smbjected to the Group C 1000-hour eval”atio” after they have passed the Group B, 340-hour acceptance criteria; hereto, the cumulative total of failures ,found during 340-hour test and during the subseqw”t L“cerval up to 1000 houm on these samples shall be computed for 1000-hour acceptance crLtt?ria. 4.2.5 Group C testin~, - Group C tests shall be performed on a lot every 6 months, (See Table 111 herein). The contractor shall, throughout the course of a contract or order, permit the Government representative to scrutinize all test data and fimdi”gs covt?ri”g ma”” fact”rer’s test program o“ Group C characteristics a“d para❑ eters for the product concerned. Upon determination by the Government inspector (i” advzmce of Group C, 6-month, test results) that Group C parameters are not being adequately met, the Government inspector may require lot-by-lot inspection, normally for .9 ❑ inimum of 3 consecutive lots, to be performed for required Group C tests . 4.2.6 Disposition of sample units. - Sample u“ics that have been subjected to Group B, Subgroup 2, 4, and 5 tests shall not be delivered cm the contract or order. Sample units that have been subjected to and have passed Group S, Subgroup 1, 3, 6, and 7 and all Group C tests (these tests to be considered “on-destructive), may be delivered cm the contract or order provided tbat, after Group B s“d C inspection is terminated, those sample units are subjected to and pass Group A inspection. Defective units from any sample group that may have passed group inspection sbsll not be delivered on the contract or order until the defect(s) has been remedied to the satisfaction of the Govermnent. 4.3 Particular examination .md test requirement. . - 4.3.1 “Pulsed’’-conditions measureir,e”ts. - Measurements required herein to be effected under pulsed conditions, shall be made in accordance with “Pulse Measure❑ents” requirements in Section 4 of MI L-STO-750. 4.3.2 Interval for End-Point Test measurements. - All applicable End-Point Test ❑ easurements shall be performed within 96 hours after sample units have bee” subjected to required physical-mechanical or e“viromrmntal test(s). -4- ● I I MIL-s-19500/49C 1 Mechanical damage resulting from tests. - Except for intentionally de4.3.3 forming, mutilating, or dismembering mechanical-etress tests to which samples are subjected, there shall be “o evidence of mechanical damage to any sample unit as a renult of any of the Groups A, B, or C tests. I I I r. I -5- I ‘0 (EL) 1 MIL-s-L9500/49c (EL) TABLE I. GsOUP A INSPEIHION. — rEST FCSTHOD PER !41L-STO-750 EXAMINATION OR TSST ~1 Subgroup 2071 L2MITs ?,OND ITIONS 1 Visual and LTPD STM30L INIT 10 --- -.. --- --- --- ❑echanf ca 1 examination ?,uhgro”p 2 3036 5 Collector-base cucoff current : 2N464 2N465 2N467 TCB = -40Vdc /,--= -40Vdc lCB - -35Vdc lCBO ICBO Icao ------- -15 -15 -10 uAd C “Ad C 3036 Collector-base cutoff c“rre”t \ias canal. D lcp,= -12Vdc lCBO .-. -6 MA c 3061 Emitter-base Cutoff Current Iias Cond. D ~EB - -12Vdc IEBO --- -6 Udc 3001 Collector-base breakdcwn voltagg 2N464 2N465 2N467 list?cond. D c = -louAdc B’JCBO ‘VCBO BVcBO -60 -ho -35 ----.-. VdC Vdc Vdc Collector -emitte] breaMovn voltage Bias Cond. D [email protected] b ‘i seal;~f BVCEO ‘VCEO BVcEO -40 -30 .15 --,...- Vdc Vdc Vdc ‘hfb ).4 ,-. MHz ).5 ,-- MHz ).7 ,-- MHz 3011 Bias Cond. D 2N464 2N465 2N467 SubRro”p 3 3301 S~ll-Si~al sbo, circuit foruard current transfer ratio cutoff frequency: 2N464 UAdc 15 VCB - -6Vdc IE = 1 d.dc f=lkHz 2N465 fh fb 2N467 fhfb -6- I !0 MIL-S-19500/49C TARLS 1. TEST MSTHOD FSR MIL-STD-750 EXAMINATION OR TEST ~/ Subgroup 3206 CROUP A INSPECTION (EL) - (Continued~ LIMITS CONDIT IONS LTPD SVMBOL UNIT MIN. MAX. 3- (Cent’ i) Small-signal short-circuit forward-current transfer ratio: 2N464 2N465 2N467 VC- - -6Vdc ~=luuldc = 1 kHz 3236 output capacttance (open circuit) VCp, = -6Vdc f ~ 0.1 &l. DNHz IE=O Cobo --- ’20 pf 3201 Small-signal short -circ”ic input impedance VcB = -6Vdc IE = 1 Cl&iC hib 18 45 ohms ‘ob --- 1.0 “mho NF --- 20 db lCBO ‘-- -100 uAdc hfe hfe hfe 7 14 50 -.. --- ----- ----- ‘fe hfe hfe 33 66 260 ------- f z o.1<1.o~ 3216 small-signal open VCB - -6 W. IE = 1 mAdc circuit output admittance f=lkHz 3246 Noise figure S“bgro”p 14 27 110 VcB = -2.5 Vdc IE = 0.5 mridc RL = 100 k ohms R - 100 ohms J 15 4 ~1 High-temperature operation: T = +71°C ~? 3036 Collector-base cutoff current Bias Cond. D Vm - -12Vdc ..- Lcw-temperat.re operatiorr T 3206 Small-signal short-circuit forward-current transfer ratio: 2N464 2N465 2N467 VCB = -6Vdc >=lmAdc = 1 kHz 29 = -55°C -7- -T MIL-S-19500/49C (EL) TABLE 1. GROUP A INSPECTION - (Cent inued~ ~1 See 3.4 herein. Lf See 4.3 1 herein. Al Quan-Tech ~i In this Subgroup, the sample unica subjected to the Hip,h-Teu,perat”re Operation test shall be permitted to return to and be stabilized at room ambient temperature prior to their being subjected to the Lov-Ternperature Operation test. ~/ Measurement shall be made after thermal equilibrium the temperature specified. test set, Model 311, or equivalent, shall be used. has been reached at I -8- MIL-S-19500/49C TABLE II. TEST METHOD PSR MI L-STU-750 SSAMINATION OR TEST ~f SubEroup 2066 Temperature cycling 1056 Seal(leak UNIT 20 --- --- --- --- --- --- --- ..- --- ... ... ... Test Cond. A --- --- .-. --- rate Teat Cond. C Procedure 111, Test Cond A or B for Gross leaks --- ..- xlo- f10i8tUre ... --- --TESt Cond .A tm clsec ... ... -.. -.. ..... -15 -15 -10 u.idc tide tide U+ 27 10 33 66 260 ... -.. --- resistance End Point Tent 3036 Collector-base cutoff current 2N464 2N465 2N467 Bias Cond. O VCB - -40Vdc VCB - -40Vdc VCB - -35Vdc I I SYMBOI 15 1051 I I k LTPO MIN. 2 Solderability 1021 cONOITIONS 1 2026 ~f GSOUP B INSPECTION. Physical dimensions Subgroup (EL) 3206 Small-signal short-circuit Eorward-curren tranafer rntia 2N464 2N465 2N467 %so lCBO lCBO Vm - -6Vdc IE - 1 uAdc f-lkHz hfe hfe hfe I P; -9- MIL-s-19500/49c (EL) TABLS II. TEST MSTHOD PER EXAMINATION OR MIL-STD-750 TEST ~/ SubRrOup 2016 GROUP B INSPECTION. CONDITIONS 3 Shock - (Continued) LTPD SYMBOL LIMITS UNIT MIN. MAX. --- --- --- --- 15 Non-operating 1500C 5 blows of 0.5 msec ea. in orientation Xl, Yl, Y2, ZI (total - 20 blows) 2056 Vibration, variable frequency ..- -.. ... --- ... 2046 Vibration fatigue Non-operating ..- --- --- --- 2006 COnntant acceleration (centrifugal) 20,000G Orientat ions xl, Yl, Y2, Z1 --- --- ... --- --- --- --- ..- ... ... ... --- .-. .-. --- .-. End Point Tests: Same 88 for Subgroup 2 above 20 SubRroup 4 2036 Terminal strength Test Co”d. E (lead fatigue) ~1 Subgroup 5 1041 Salt atmosphere (corrosion) Subgroup 1031 20 --- 6 10 High-temperature T6tg-+1000C life(non-operatin g) t - 340 hre ~1 -1o- ● MIL-s-19500/49c TABLE 11. TEST MSTHOCI PSR MIL-ST31-750 GROUP B INSPECTION .- (Continued) EXAMINAT ION OR TEST if CONDITIONS Subgroup ) 6- (Con (EL) LTPO STMBOL J ~ MIN ‘WA. --... --- -30 -30 -20 “Ad c “Ad C uAd C 10 20 83 41 82 125 --..- ... ... --- ON IT End Point Tests 3036 3206 Collector-base cutoff current: 2N464 2N465 2N467 Small-signal short-circuit forvard-current transfer ratio: 2N464 2N465 2N467 Bias Cored. D Va = -40Vdc = -40Vdc ‘CB VCB - -35Vdc VCB - -6Vdc IE ‘= 1 m$.dc f=lkHz ‘fe bfe h fe Steady state operation life: --- 10 Subp,roup 7 1026 lCBO lCBO 1CBO TA - +25°C t = 340 hrs pT = 150 ti V B = -35Vdc ~? -.. End Point Tests Same as for Subgroup 6 above — ~1 See 3.4 and 4.3.2 herein. ~/ Per Method 112 in Standard MIL-STO-202. ~1 Electrical rejects from the name 10C under evaluation ~1 See 4.2.4 herein. P. -11- may be used for this test. MIL-s-19500/49c (EL) TABLE III. CROUP C INSPBr7110N. ~1 TEST METHOO FZR MIL-S3TI-750 EXAMINATION OR LTPo 1 High-temperature ltfe (nOn-oper.ating) LIMITS STMBOL TEST ~1 Subgroup 1031 CONDITIONS OUIT M2N . MAX. ..- .-. --- ..- lCBO lCBO lCBO ‘---‘-- -30 -30 -20 uAdc “Adc uAd C hfe ‘fe h~e 10 20 83 41 S2 325 ------- ... -.. ..- ... x -10 TBtg- +lOODC t - 1000 hrs ~f End Point Tests: 3036 3206 Collector-base cutoff current: 2N464 2N465 2N467 Small-8 tgnal short-circuit fonaard-current tr.9n8fer ratio: 2N464 2N465 2N467 Subgroup 1026 Bias Co”d. D Va = -40Vdc VCB = -40Vdc - -35Vdc ‘CB Vm - -6Vdc Ie-lmAdc f-lkllz 2 Stea* state operation life: ).-lo TA - +25°C t - 1000 hrs VCB - -35Vdc P - 150W J End-Point Tests: Same as for Subgroup 1 above if See 4.2.5 herein. &l See 3.4 and 4,3.2 herein. II See 4.2.4 herein, -12- !0 i I m: 1. 2. 3. 4. 5. 6. I 7. B. 9. . N DIMENSIONS INCHES LTR Metric equivaleata (to the nearest MIN Miix 01 ran) ere given Eor general inform. A .335 .370 atfon only and are based upuL. I inch .305 B .335 - 2s.4 m. .240 .260 S!aasured in che zone beyond .250 c (6.35 mm) frnm the seating plane. D l.$ilo I.750 Measured in the zone .050(1 .27 m) a“d E .016 ,021 .250 (6.35 mm) from t~e Beating plane. F .016 .019 Varlacu-ms o“ Dim. B in this zone .100 --G B.hall n“. exceed .010 (.25 run). ----OiItlime i“ this zone iS “ot controlled, n .029 .04s J When measured i“ a gaging plane .034 .054+.001 (1.37 UOD+ .03 nun) belov K .028 tbe seating plane of the transistor .125 L .009 mm dia leads shall be within .007 M .1414 Nom (.18 con) of their true location rela.0707 Nom N tive to a maxiomm wid’th tab. Smaller die leads shall fall within the outli”,. of the max dia lead tnlera”ce. All leads electrically is.alnt~d from case. Measured from the m.axiumm diameter of the actual device, All three Leaao. Figure 1. Outline and Oimensio”s. -13- MILLIMETERS MIN MAX 8.51 7.7$ 6.10 38.10 .41 ,41 2.S4 --- 9.40 8.51’ 6.60 44.4s ,53 ,48 ----- 1.14 .74 .86 .71 3.18 .23 3.59 Nom 1.80 Nom : s 7,9 2,9 3,9 4 s 8 6 6 -1 t41L-s-19500/49c(EL) 5. PRSPAP,ATION FOR DELIVSRY 5.1 Preparation for delivery. - Preparation for delivery and the inspection of Preparation for Delivery ehall be in accordance with specification t41L-S-19500. 6. NOTFS 6.1 - The notes included i“ Specif Lcacion MIL-S-19500, additions or except iorm , are applicable to this specification. 6.2 Application a. I b. 6.3 with the following Euldance and super sessio” imformati.an. - The translators conforming to requirements of this document issue are recommended aa replacement (h.svins nuperior-cont rolled char.scteristics) for the tranBiators covered by previous issue(a) of, respectively, this document and the folloving 8uper8eded documents, all as listed below: MIL-T-19500/49B (Sig C), 3 1959--Transistor, Type 2N464 MIL-T-19500/50A (SiS C), 3 Feb 1959--Transintor, Type 2N465 MIL-T-19500/52B (Sig C) , 3 Feb 1959--Transistor, Type 2N467 F.sb To insure proper equipment-circuit application, particular .sttentio” should be given to the differential voltage and &rrent-gain ratings lnd performance characteristics pertinent to the ittdivid”al transistor tYPe9 covered herein. OrderinK data. - a. TarmLnal-lend length: b. Terminal -1ead material See 3.3.3 herein. a“d finish: See 3.3.4 herein. 6.4 Qualificat ion. - With respect to products requiring qualification, awards will be ❑ade only for ~“ch product B ao have, prior to the time net for opening of Liet (QPL)-19500, bids, been tested ●nd approved for Lncl”sion in @alif ied Products whether or not such products have actually been 60 llnted by that date. Information pertaining to qualification of prc.ducts covered by thin npecificatio” should be requested from the Commanding General, U. S. Army Electronic Command, Fort 140nmouth, New Jerney 07703, Attention: AMSEL-PP-EM-2. 6.5 Revision (document) chanp.en. - Revision-letter eymbola ara not used in to the previous lSB”R, due to the thin revioion to identify changes with rmpat extennivenean of the changen. (See 6.2a suparae.ssion information, above. ) Cuetodian: Army-EL Preparing activity: Army -EL Project No. 5961 -AO1O 14