ETC JAN2N326

I
.
I .“~
..
MILITARY
SEMICONDUCTOR
DEVICE,
SPECIFICATION
TRANSJSIT3R,
TYPE
NPN,
GERMANIUM,
POWSR
,..
2N326
This 5Pedification is mandatory for use by all Departments and Agencies
of lhe Department
of Defense.
1.
sCOPE
1.1 transistor.
1
This specilic.l
ion cover.
tie delail
dlmenstons.
See figure
1 (TO-3).
1.2
Physiwd
1.3
Maxhn.m
1. 4 Prinmry
PT Y
‘CBO
w
—
y@
7
35
Derate
electrical
I
linearly
POW.
‘CE
VEBO
‘CES
y@
y&
,5,7
Ic
Tst5
TJ
x
~
Adc
-65 to .s5
15
.117 W/Qc
for TC >25”
+ 85
C
characteristics.
‘FE
Limits
for NPN, sermardum,
ralings.
Al
●
req.iremems
= 1 Vdc
lC = 1 Adc
...
VCE (sat)
‘FE
VCE = 1 Vdc
ftd%
Vc~
[c = 500 mAdc
Ic = O. 5 Adc
..-
[B = 50 mAdc
= 10 Vdc
Ic = 100 JnA!ic
@
yHQ
15
30
---
O. 15
60
60
0.60
4
I
..
..
I
!.:
:iij
.,
d
...-
W.C 5961
. . .. .. ..
.
,”......”.-
.
.
., ...
.
-.
I
;,..
●
MU.-S-195QV4CS
~.
2.
)
APPL3CABLEC OCUMFXT.?
2.1 The following
PrOPOs~, fOrm awt
documents,
of the issue fn effect on date of invitation
of LMS sPeCifiCti~.
to the exlent herein.
forbids
or request
for
SPECIFSCATION
hllf.fTARY
M3L-S-19500-
St?miconductor
Devices,
General
Specifiw.tio”fm
.
●
STANDARDS
MfMTARY
M[L-STD- 202 - Test Methods
hffL-STO-150
- Test Methods
{or Electronic
and Electrical
for S?micomfucmr
Devices.
(Copies of specifications,
standards,
tion with specfficproc.
remem funcliom
by the contrmting officer.)
3.
3.1
Component
drawings,
$uxfpublicatiotis
required by suppliers
should be obtafmd from tbeprocuring
activftyor
incon”ecas directed
-.
REQUIREMENTS
~
Requirements
shall be in accordance
with MIL-S-19500.
3.2 Abbrevialiom,
syrnbois, and de fl”itlons.
The abbreviations.
herein are defined in MI L-s-19500,
and m follows:
‘cES.
Colleclor
,
10 emilter
voltage,
*
3.4 Performance
Sf, amlflf.
.
3.5 ~
the transistor
(a)
(b)
QuALfTy
characteristics.
The following
al the optio”of
Performance
marking specified
the mmmfact.rer:
and as speciiled
symbols,
with ba.sc short-circuited
3.3 Desifp,
Conslr.clion,
znd physical dinlensions,
slruclicm, imdphyslca]
dfmensiw!s specified 1. figure
4.
Parts.
The transistor
herein.
mxfdefinitions
used
m emitter.
shall be of the de’sigr,,
con.
1.
ctiacteristics
shall bass~cif
ied i“mblesl,
in MIL-S- 19500 may be omitled
from the body of
CO.nlry Of Origin.
Matiactwer-s
identUicatioa
AWffANCE
PROVISIONS
4.1 .’?amplinsard
irmpection.
and as specifibereim
=mpli%ati
.
4.2 Cfualificaiion imp ectioospecified in tables f, N, and m.
Qualification
-
4.3 Quafity mnformance
inspection,
Quality Conformance inspect ion shall consisl of group A,
B, ad C inspections.
When specified in the commct w order, one copy uf lhe quality conformance
inspection data, pertinent m lhe device inspection lot, sN1 be supplied with each shipment by the
device manufacturer.
(See 6.2. )
4.3.1
Grou~ A inmectio~
specified in table L
hspectionakilbe
ins f,ectio”
Group A inspectlo”
sfull
i“accordance
sh.il
consist
of the examinaliom
con-skit of the examim+tions
.
..
. .,-.
. ..
_..
lests
d
.
.
ad
and 1,s1s
,.. i.
2
—..
wilh MIL-S- 19500,
i
i
.
.
I
&
MIL-S- 19500/40B
‘.
i.”
1EMITTER
\
I
[
1
BASE>
‘K
‘
RAD
Dimensions
Ltr
Inches
Min
A
---
B
.250
c
Millimeters
Mo.
MirI
.875
---
22.23
.450
6.35
---
11.43
.135
D
E
.312
. m5
Notes
Mo,
---
3.43
7.92
.225
---
5.21
3
5.72
F
.420
.440
10.67
11.18
G
1.177
1.197
B.90
30.40
H
.655
.675
)6.64
17.15
2
J
.03E
---
.043
.97
1.09
3
K
L
M
--.151
.525
-----
.188
.161
13.34
4.78
3.84
4.09
NOTES:
1. Metric equivalents (!o the nenrest .01 -)
.xe give. for general in f.amrmtion only cmd
2.
ore based UPO. 1 inch = 25.4 mm.
This dimensi.”
should be me.s.red
at
Pints .050 (1.27 mm) In .055 (1.40 mm)
bel.aw se.a!i”g plo”e.
When gage is n.t used
measurement will be mode .! se. !ing pl.ne.
3. TWO Iedds.
4. Collector shall be electrically
connected IO
the case.
FIGURE
1.
Ph7sic.1
dimensions
cd trnnsismr
3
type 2N326 (T@3).
).,
●
.’..
fdlk
S- 195w/40B
..
.,
. ..
4. 3.2
specified
.
{
●
Group B bmpectlon.
in table IL
Grmtp B Inspection
shtil
comfst
of the cxamiuaticms
and tests
4.3.3
Group C inspection.
Group C inspection shafl cansfst of the examinations
and tests
specified in table III. This inspection shall be wnducted on the initiaf lot and thereafter every
motihs during production.
6
samples.
Samples that have been SubjKted to $3TCWpB,
4. 3.4 Group B amf group C life-lesl
340-hours life-test,
may be conltnued on test Ior 1, OQO-hours in order to satisfy group C life-test
requirements.
These samples shaff be predesimti,
and sbafl rem~n s~ieti~
~ the STOW C
1, 000-ho.r
acceptance
evahaion
tier
they have passed the group B, 340-hour accep:mce
criteria.
The cumufafive tofaf of fail.re8 loud d.rfng 340-fm.r
lest and durtig the subsequeti
imerwf
UP to
1,000 hours, shafl b-s computed for 1, 000-bnur acceptance
criteria.
.
4.3.5
Group C lestiiw.
The contractor
shall, throughow the course of a contract or order,
permit the C.-wernment representative
m scrutinize
all test data and findings covering mamdacturer% Lest program on group C characteristics
ad parameters
for the product concerned.
Upon
determination
by the Government inspec:or
(~ ~v~ce
of group c, 6- nlOnlb, test results) lfMt WOuP
C parameters
are rmt being adequately met, lhe Government inspector may requfrc lot-by-lot
inspection, normally for a minimum of 3-consecutit,e
lots. to be performed
for required group C tests.
.
4.4
tables
●
Methods of examirulion and test.
I, U III, and as follows:
Methcds
of examination
and test shaU be as specified
.
d
in
End-pcdrd tests for qualification
ad qw.lily
4. 4.1 Time limit for end-voint test measurements.
conformance
inspection shal I be completed within 96 hours after completion of the fast test in the
subsrouP.
TABLE
1.
Group A inspection
—
Lhnits
MIL-STO-?50
ExwdmUm
tefhcd
subgroup
—
or test
>TP1
Oetaifs
din
—
fax
Lhu
10
1
vii
ad .echankaf
examination
----
.-.
2011
5
Sahgroup 2
lVCBO
35
..
Vdc
Bias COIL& U VCB = 2 Vdc
fcrla
...
300
@dc
3036
Bias mml.
D VCB = 35 Vd
b2B0
..-
sol)
@dc
3061
Bias cod.
D VEB = 15 Vd
‘EBO
---
500
(JU2C
---
3
mAdc
Breakdown voltaK%
co ffector to Iasa
3001
Bias comi.
COUectOr fo tie
current
cutoff
3036
to base cuxdl
CoUector
current
ymbl)l
Emifter to kase cutof2
current
D ~
= 500 fld
Bias COUi. ~
VC-s = 35 Vdc
COffectOr to emufer
cutoff curree
fCES
4
d
-.
,., -..,.
. . .
.. . .
I
I
.1
-n
MUATABLS
L
Group A inspection
Limits
M3L-STD-750
I
ExwdnaUOn
—
or test
Uethcd
I
Details
.TPD
Min
symbol
.
.
I
I
SQsM!@
15
60
---
‘FE
30
60
---
VCB = 10 \rdc; Ic =
100 nuidc
fhol
0.15
4
[c = 500 mAdc;
50 mAdc
:E (Sal
...
,60
fdc
‘BE
0.5
1
Tdc
VBE
D,75
80
Idc
3076
VCE = 1 Vdq
Foruard-current
ratio
transfer
3076
VCE = 1 Vdc; IC = O. 5 Adc
SmaU- slgral short-circuit
forward-current
transfer
ratio cutoff frequency
3301
Co ffector to emitter
voltage (saturated]
3071
Base emitter voltage
(nomml.rated)
3066
Bu.e emitter voltage
(nonsaturated)
3066
Q
~
= 1 Adc
L
IB =
Test mrid. B; VcE
lC = 0.5 Adc
Tesl
fc=l
= 1 Vdq
cord. B; VCE = i Vdq
Adc
—
or test
2!E.WWQ
dimensions
2068
Mfn
Max
..-
---
..-
---
---
---
---
---
.-.
..-
---
---
---
---
---
---
—
utit
(see figure
1.)
15
SolderabUlly
2026
Thermaf shock
(temperature
cycttng)
io31
(@ass
*mbO1
20
subgr Oup 2
st,ai”)
Test COWL A. except
step f shafl be ti -65”
C
1036
Test CONL B
Termlmd strength
(tension)
2026
Test cord. A:
10 lbs; iime .
weight .
15 sec
---
---
---
---
Termtmdl strengfh
(terminal torque)
2026
Test rend. D1: 10WC .
5 in-o.; time . 15 sec
---
---
---
-..
Seaf (leak-rate)
..-
hffL-STDtest cord
tesf cord,
leaks
---
---
x 10-~ ah
Moisture
d
—
Limits
TPD
.
shock
UHz
—
—
hBL-sTD-150
Thermaf
Unit
—
fwE
transfer
Physical
Max
—
5
For-dard-currerd
rat M
Examination
1950Q/40B
- C.mdimmd
resfsfance
lozf
omithit
202, method i 12,
C, procedure ~
A or B [or gross
id
C!muliordng
W/se
.-.
.-.
---
---
5
..
341L-S- 19500 ,40B
TABLE
IL
Group B inspection
●
- Continued
—
Limits
M2L-STB-750
FXamhuition
or tc.st
,lethcd
subgroup
2-
1
I
.TP
—
Oetails
(See 4.4.1.
Collector
current
to base cutoff
Mb)
Max
—
..-
500
#Ad,
..
s. o
mAd(
hFE
15
60
.. .
. ..
.. .
...
. ..
.. .
..
...
..-
...
...
...
. ..
3036
,Bias
cord.
D. VCB = 35 Vdc
kso
C; VCES . 35 W
~ES
I
3041
Bias cond.
Forwardrat io
3076
VCE = 1 Vdc; fc = 1 Ad.
currenl
transfer
15
3
Nonoperat ingI 500 G. approx
1, 0 msec, 5 blows i“ each
2010
frock
~ri@nlaliO~
Wld z,
[ibrat ion kuigue
Iibralion,
variable
:onstant
acceleration
frequent>
No”operiuing:
2056
10 G
2006
(same as subsmuP
xl.
2046
yI)
y2,
10 G
---
110, 00Q G: in each orie”lat
xl.
y],
Y2. @
..-
. ..
i.,
..
z]
,d
e-
2)
suhgmup4
20
tilt mn.xphere
(mrreaion)
1041
..-
.-.
---
---
,..
---
.-.
points:
(Same as S*MUP
subgroup
2)
5
7
I
1031
iT~tg
. .8S- C: lime .340
,hours (see 4.3. 4)
.-.
Collector
10 base CU1OU
c“ r ,.2 rlt
3036
&
D VCE! = 3S Vdc
CBO
Collector
to emitter
.woff c.rrcm
3041
~Bias cod
C
CES
Foruxni-currem
ral i.
3076
iigh-temperature
(mnoperaring)
m
Unit
)
Collector to emitter
cutoff currem
M
Vmbol
Continued
hd points:
subgroup
)
points:
fife
(See 4.4. 1)
transfer
@J*.
VCES .35
\,d
..
i
,nAdc
..
6
mild,
10
60
I
!, CE = 1 Vdc: lC .
1 ,Mc
‘FE
,
...
1’
I
“-.
I
I
I
6
I
0’
I
‘1
,0 ‘>
MI L- S- 195 W/40B
TABLE
U.
Group B inspection
- Continued
1
1,
.1:
Lfmiw
M3L-STD-750
F.xmnination
or te St
..
Methmf
LTPD
Details
b
mbol
Max
Unft
. ;
Subp’o”p
Steady-stare
0
7
operation
life
1026
TA=+25-C;
PT=
-h-
1.4W:
---
. .
..
as subgroup
I I
5)
T
TABLEIIL
Group C inspection
.
Limits
MIL-STD-750
or test
Qmfmffon
Lm
—
Shgroup
.i
Measurement
Collector
current
rhermal
fht(
.
F
1001
‘ ,ormal mounting; pressure
mm H& lime . 60 sec
---
Bias cod.
‘CBO
F
..-
---
.-.
...
500
@d,
@J- C
..-
8.6
o c/\
---
---
---
.-.
1
...
6
‘FE
10
.30
..-
..-
---
---
---
during test:
3036
to base cutoff
resistance
Subgroup
D VCB = 35 Vdc
3151
2
3tgh-temperamre
(mmnperaling)
k.
I
life
11)31
T~tE . . 85C C (6ee 4. 3.4)
..-
kBO
Snd pofms:
(see 4.4.1.
Collector
current
to base cutoff
3036
Bbls cond.
Collector
current
10 emitter
3041
Bfas CONf. c
3076
VCE = 1 Vdc; ~
1026
TA=.25”
C; PT.1.4W
(see 4.3. 4)
Forward-current
rat io
Subgroup
Xeadg-stam
Mb)
‘ mbd
15
1
3ar0metric
pressure,
reduced (altitude opermlon)
.’
---
II
End fldllk:
(3am.
0’
.-.
time = 34Ll hours:
(see 4. S. 4)
)
cutoff
trznsfer
Q VCB = 35 Vdc
VCE5 = 35 Vd
~ES
= 1 Ad.
TIM
3
operation
life
INJ poinfs:
(Same as subgroup
2)
—I .—.
8
7
—.
.
—
_—
..
——
—.
—- —-.
I
I
‘\
●
MIL-S- 19500/40B
5.
5.1
:%
6.
PREPARATION
See MIL-S-
I
FOR DELSVERY
19500,
section
5.
NOTES
6.1
e
The notes specified
6.2
Ordering
dafa.
Inspection
in MIL-S- 19500 are applicable
Prmurement
document
to this specUication.
should specify:
data (see 4. 3).
6.3 Oeletion of type 2N325.
Type 2N225 has been deleted from this specification.
This type h
no longer manufactured.
lnlor malion regarding a replac emem Lype may be obtained from:
Commamifng Genera3, U. S. Electronics
Comma@
ATTN
AMSEL- PP - ED, El. Monmouth,
N. J., 07703.
6.4 Inter. hangability
criteria.
The device
cot, er d by the superseded
,MfL-S-19500/40A.
covered
herein is interchangeable
with the device
6.5 Chanses from previous issue.
The margins of th,s specification
are marked wilh a“ asterisk
10 indicate where changes (additions,
modifications,
corrections,
deletions) from the previous issue
were made.
This was done as a convenience only and the Government assumes “o liability whatimever for any inaccuracies
in these notations.
Bidders &nd contractors
are cxutio”ed to evaluate the
requiremetis
of this document based on the enlire content trrespec:ive
of the rnar@al
“otatio”s
and
refafion?. hip to the last previous issue.
Preparing
Army
(Project
activity:
- EL
5961-0021-s)
Review activities:
Army - EL, &if
Navy - EC, ~
Air Force - 11, 17, 85
O&4-ES
User activities:
Army - EL, S&f
Navy - CC, MC, OS, AS
Air Force - 19
I
t
8
!
,
● I’
.,.
.
.
. . ..